JPS6451399A - Production of silicon carbide whisker - Google Patents

Production of silicon carbide whisker

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Publication number
JPS6451399A
JPS6451399A JP20394087A JP20394087A JPS6451399A JP S6451399 A JPS6451399 A JP S6451399A JP 20394087 A JP20394087 A JP 20394087A JP 20394087 A JP20394087 A JP 20394087A JP S6451399 A JPS6451399 A JP S6451399A
Authority
JP
Japan
Prior art keywords
silicon
solid
mixture
temp
silicon carbide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP20394087A
Other languages
Japanese (ja)
Other versions
JP2604753B2 (en
Inventor
Muneyuki Motoyama
Hiroyuki Motone
Kenichi Ishima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Osaka Fuji Corp
Original Assignee
Osaka Fuji Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osaka Fuji Corp filed Critical Osaka Fuji Corp
Priority to JP62203940A priority Critical patent/JP2604753B2/en
Publication of JPS6451399A publication Critical patent/JPS6451399A/en
Application granted granted Critical
Publication of JP2604753B2 publication Critical patent/JP2604753B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To produce the title silicon carbide whiskers at a low temp. in a short time by heating a mixture of solid silicon and solid carbon in a carrier gas current, and keeping the mixture at that temp. CONSTITUTION:The powdery solid silicon selected from amorphous silicon, a silicon single crystal, a silicon polycrystal, etc., and the solid carbon such as carbon powder and a graphite sheet are uniformly mixed. The mixture is heated at about 800-1,300 deg.C in the current of a carrier gas such as argon, kept at that temp., and then air-cooled. As a result, white silicon carbide whiskers are formed on the surface of the mixture. Since the reaction temp. is low, the SiC powder due to the direct reaction of solid silicon and solid carbon is not formed.
JP62203940A 1987-08-17 1987-08-17 Method for producing silicon carbide whiskers Expired - Lifetime JP2604753B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62203940A JP2604753B2 (en) 1987-08-17 1987-08-17 Method for producing silicon carbide whiskers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62203940A JP2604753B2 (en) 1987-08-17 1987-08-17 Method for producing silicon carbide whiskers

Publications (2)

Publication Number Publication Date
JPS6451399A true JPS6451399A (en) 1989-02-27
JP2604753B2 JP2604753B2 (en) 1997-04-30

Family

ID=16482202

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62203940A Expired - Lifetime JP2604753B2 (en) 1987-08-17 1987-08-17 Method for producing silicon carbide whiskers

Country Status (1)

Country Link
JP (1) JP2604753B2 (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60141698A (en) * 1983-12-28 1985-07-26 Kanebo Ltd Manufacture of silicon carbide whisker

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60141698A (en) * 1983-12-28 1985-07-26 Kanebo Ltd Manufacture of silicon carbide whisker

Also Published As

Publication number Publication date
JP2604753B2 (en) 1997-04-30

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