JPS6450620A - Semiconductor logic element - Google Patents

Semiconductor logic element

Info

Publication number
JPS6450620A
JPS6450620A JP62206417A JP20641787A JPS6450620A JP S6450620 A JPS6450620 A JP S6450620A JP 62206417 A JP62206417 A JP 62206417A JP 20641787 A JP20641787 A JP 20641787A JP S6450620 A JPS6450620 A JP S6450620A
Authority
JP
Japan
Prior art keywords
resistor
input
polycrystal silicon
logic element
mosfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62206417A
Other languages
Japanese (ja)
Inventor
Akira Chokai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP62206417A priority Critical patent/JPS6450620A/en
Publication of JPS6450620A publication Critical patent/JPS6450620A/en
Pending legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Logic Circuits (AREA)

Abstract

PURPOSE:To attain forming of a logic element to a multi-stage input by forming the logic to plural input stages by one transistor(TR) and a resistor. CONSTITUTION:For example, a TR is a N-channel MOSFET 5. A resistor 4 formed by doping phosphor to a polycrystal silicon by a desired quantity is connected to three input sections 1, 2, 3 respectively. The resistors 4 are connected in common to a gate section 6 of the MOSFET 5. The source 7 of the MOSFET is connected to ground and the drain 8 is connected to a resistor 9 made of a polycrystal silicon and the output 10. Moreover, the other end of the polycrystal silicon 9 is connected to an external power supply 11. Furthermore, the resistor 9 made of polycrystal silicon is formed at the same time as the resistor 4 and its resistance is set independently of the resistor 4. Thus, the output to the 3-input gate is set independently of each input and a logic element is formed by using one TR.
JP62206417A 1987-08-21 1987-08-21 Semiconductor logic element Pending JPS6450620A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62206417A JPS6450620A (en) 1987-08-21 1987-08-21 Semiconductor logic element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62206417A JPS6450620A (en) 1987-08-21 1987-08-21 Semiconductor logic element

Publications (1)

Publication Number Publication Date
JPS6450620A true JPS6450620A (en) 1989-02-27

Family

ID=16523025

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62206417A Pending JPS6450620A (en) 1987-08-21 1987-08-21 Semiconductor logic element

Country Status (1)

Country Link
JP (1) JPS6450620A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0665125U (en) * 1993-02-26 1994-09-13 広育 伊倉 Snowfall prevention structure for automobiles
KR100704350B1 (en) * 2002-11-13 2007-04-06 다 탕 모바일 커뮤니케이션즈 이큅먼트 코포레이션 리미티드 Method for multi-user demodulation with variable spread spectrum coefficient
EP1777130A1 (en) 1999-05-25 2007-04-25 Toshio Murakami Method and device for wiping

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0665125U (en) * 1993-02-26 1994-09-13 広育 伊倉 Snowfall prevention structure for automobiles
EP1777130A1 (en) 1999-05-25 2007-04-25 Toshio Murakami Method and device for wiping
KR100704350B1 (en) * 2002-11-13 2007-04-06 다 탕 모바일 커뮤니케이션즈 이큅먼트 코포레이션 리미티드 Method for multi-user demodulation with variable spread spectrum coefficient

Similar Documents

Publication Publication Date Title
JPS6445157A (en) Semiconductor integrated circuit
EP0013482A3 (en) Complementary metal-oxide semiconductor
DE3576612D1 (en) SEMICONDUCTOR ARRANGEMENT WITH MOS TRANSISTORS.
JPS6450620A (en) Semiconductor logic element
JPS5384578A (en) Semiconductor integrated circuit
EP0336741A3 (en) Semiconductor integrated circuit with bipolar transistors and mosfets
JPS648659A (en) Supplementary semiconductor integrated circuit device
JPS5325375A (en) Semiconductor integrated circuit devi ce
JPS5542332A (en) Memory circuit
JPS6469116A (en) Delay circuit for semiconductor integrated circuit device
DE3581842D1 (en) INTEGRATED SEMICONDUCTOR CIRCUIT WITH COMPLEMENTARY FIELD EFFECT TRANSISTORS.
JPS57109427A (en) Semiconductor integrated circuit device
JPS5558608A (en) Current miller output circuit
JPS5411687A (en) Manufacture for semiconductor integrated circuit
JPS5482179A (en) Electrostatic inductive integrated circuit device
GB1135059A (en) Method of making semiconductor devices
JPS6442837A (en) Semiconductor integrated circuit
JPS5780824A (en) Schmitt trigger circuit
EP0395070A3 (en) Gate array semiconductor integrated circuit
JPS5648720A (en) Inductive load driving circuit
JPS555538A (en) Decoder circuit
JPS5621211A (en) Power-on-reset circuit
JPS5758415A (en) Conversion circuit
JPS57113268A (en) Semiconductor integrated circuit device
JPS5644191A (en) Semiconductor memory cell circuit