JPS6450413A - Epitaxial growth method - Google Patents

Epitaxial growth method

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Publication number
JPS6450413A
JPS6450413A JP20693087A JP20693087A JPS6450413A JP S6450413 A JPS6450413 A JP S6450413A JP 20693087 A JP20693087 A JP 20693087A JP 20693087 A JP20693087 A JP 20693087A JP S6450413 A JPS6450413 A JP S6450413A
Authority
JP
Japan
Prior art keywords
layer
gaas
atomic
layers
projected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP20693087A
Other languages
Japanese (ja)
Other versions
JP2560740B2 (en
Inventor
Kazuto Ogasawara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP62206930A priority Critical patent/JP2560740B2/en
Publication of JPS6450413A publication Critical patent/JPS6450413A/en
Application granted granted Critical
Publication of JP2560740B2 publication Critical patent/JP2560740B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Abstract

PURPOSE:To obtain GaAs layers having excellent morphology without remnant of concentrated inner stress, by depositing a gallium arsenide layer having sepcified number of atomic layers in an amorphous state on a substrate, forming a single crystal of the gallium arsenide layer, growing a silicon layer having the specified number of atomic layers, and sequentially circulating said steps. CONSTITUTION:An As beam is projected, and the temperature of a substrate 1 is decreased. A Ga beam is projected by a degree corresponding to one GaAs atomic layer. Then, the temperature of the substrate is increased. An amorphous GaAs layer 21 is annealed, and a single crystal is obtained. An Si beam is projected by a degree corresponding to two atomic layers, and an Si layer 31 having the two atomic layers is grown. Then, the temperature of the substrate 1 is decreased again. A Ga beam corresponding to one GaAs atomic layer is projected. An amorphous GaAs layer 22 having two atomic layers is deposited. The temperature is increased, and the layer 22 is made to be a single crystal state. In this way, the growth of the Si layer, the deposition of the amorphous GaAs layer, crystallization,... are sequentially circulated, and a desired thickness is achieved. Thus the morphology of the GaAs layers 2 becomes sufficiently excellent.
JP62206930A 1987-08-20 1987-08-20 Epitaxial growth method Expired - Lifetime JP2560740B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62206930A JP2560740B2 (en) 1987-08-20 1987-08-20 Epitaxial growth method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62206930A JP2560740B2 (en) 1987-08-20 1987-08-20 Epitaxial growth method

Publications (2)

Publication Number Publication Date
JPS6450413A true JPS6450413A (en) 1989-02-27
JP2560740B2 JP2560740B2 (en) 1996-12-04

Family

ID=16531407

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62206930A Expired - Lifetime JP2560740B2 (en) 1987-08-20 1987-08-20 Epitaxial growth method

Country Status (1)

Country Link
JP (1) JP2560740B2 (en)

Also Published As

Publication number Publication date
JP2560740B2 (en) 1996-12-04

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