JPS6448485A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
JPS6448485A
JPS6448485A JP20560287A JP20560287A JPS6448485A JP S6448485 A JPS6448485 A JP S6448485A JP 20560287 A JP20560287 A JP 20560287A JP 20560287 A JP20560287 A JP 20560287A JP S6448485 A JPS6448485 A JP S6448485A
Authority
JP
Japan
Prior art keywords
oscillation
rib
degrees
angle
side face
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20560287A
Other languages
Japanese (ja)
Inventor
Yoshifumi Tsunekawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP20560287A priority Critical patent/JPS6448485A/en
Priority to FR8714606A priority patent/FR2606223B1/en
Priority to DE19873736497 priority patent/DE3736497A1/en
Priority to US07/113,788 priority patent/US4856013A/en
Publication of JPS6448485A publication Critical patent/JPS6448485A/en
Pending legal-status Critical Current

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  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To allow the control of oscillation of only fundamental transverse mode oscillation while maintaining longitudinal multimode, keep oscillation threshold value to be low, and then allow for a stable oscillation up to a high output by specifying the angle between a rib-like side face of an optical waveguide path and junction plane. CONSTITUTION:In a semiconductor laser where a rib-like photoconductive wave path is provided and ZnSe layer 209 which is the II-IV compound semiconductor layer is embedded into the photoconductive wave path side face, an angle thetabetween the rib-like optical waveguide path side face and junction plane is allowed to be 50 or 120 degrees. If the angle is less than 50 degrees, the threshold current increases and the maximum light output decreases. If it exceeds 120 degrees, a high-order oscillation is seen in transverse mode. Only the fundamental transverse mode oscillates at a low threshold current while maintaining longitudinal multimode oscillation and a high-output laser oscillation with small astigmatism is enabled.
JP20560287A 1986-10-29 1987-08-19 Semiconductor laser Pending JPS6448485A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP20560287A JPS6448485A (en) 1987-08-19 1987-08-19 Semiconductor laser
FR8714606A FR2606223B1 (en) 1986-10-29 1987-10-22 SEMICONDUCTOR LASER AND MANUFACTURING METHOD THEREOF
DE19873736497 DE3736497A1 (en) 1986-10-29 1987-10-28 SEMICONDUCTOR LASER AND METHOD FOR THE PRODUCTION THEREOF
US07/113,788 US4856013A (en) 1986-10-29 1987-10-28 Semiconductor laser having an active layer and cladding layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20560287A JPS6448485A (en) 1987-08-19 1987-08-19 Semiconductor laser

Publications (1)

Publication Number Publication Date
JPS6448485A true JPS6448485A (en) 1989-02-22

Family

ID=16509588

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20560287A Pending JPS6448485A (en) 1986-10-29 1987-08-19 Semiconductor laser

Country Status (1)

Country Link
JP (1) JPS6448485A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57128092A (en) * 1981-01-30 1982-08-09 Sanyo Electric Co Ltd Imbedded type semiconductor laser device
JPS59195895A (en) * 1983-04-21 1984-11-07 Nec Corp Semiconductor laser
JPS6261382A (en) * 1985-09-11 1987-03-18 Hitachi Ltd Semiconductor laser

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57128092A (en) * 1981-01-30 1982-08-09 Sanyo Electric Co Ltd Imbedded type semiconductor laser device
JPS59195895A (en) * 1983-04-21 1984-11-07 Nec Corp Semiconductor laser
JPS6261382A (en) * 1985-09-11 1987-03-18 Hitachi Ltd Semiconductor laser

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