JPS6448485A - Semiconductor laser - Google Patents
Semiconductor laserInfo
- Publication number
- JPS6448485A JPS6448485A JP20560287A JP20560287A JPS6448485A JP S6448485 A JPS6448485 A JP S6448485A JP 20560287 A JP20560287 A JP 20560287A JP 20560287 A JP20560287 A JP 20560287A JP S6448485 A JPS6448485 A JP S6448485A
- Authority
- JP
- Japan
- Prior art keywords
- oscillation
- rib
- degrees
- angle
- side face
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To allow the control of oscillation of only fundamental transverse mode oscillation while maintaining longitudinal multimode, keep oscillation threshold value to be low, and then allow for a stable oscillation up to a high output by specifying the angle between a rib-like side face of an optical waveguide path and junction plane. CONSTITUTION:In a semiconductor laser where a rib-like photoconductive wave path is provided and ZnSe layer 209 which is the II-IV compound semiconductor layer is embedded into the photoconductive wave path side face, an angle thetabetween the rib-like optical waveguide path side face and junction plane is allowed to be 50 or 120 degrees. If the angle is less than 50 degrees, the threshold current increases and the maximum light output decreases. If it exceeds 120 degrees, a high-order oscillation is seen in transverse mode. Only the fundamental transverse mode oscillates at a low threshold current while maintaining longitudinal multimode oscillation and a high-output laser oscillation with small astigmatism is enabled.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20560287A JPS6448485A (en) | 1987-08-19 | 1987-08-19 | Semiconductor laser |
FR8714606A FR2606223B1 (en) | 1986-10-29 | 1987-10-22 | SEMICONDUCTOR LASER AND MANUFACTURING METHOD THEREOF |
DE19873736497 DE3736497A1 (en) | 1986-10-29 | 1987-10-28 | SEMICONDUCTOR LASER AND METHOD FOR THE PRODUCTION THEREOF |
US07/113,788 US4856013A (en) | 1986-10-29 | 1987-10-28 | Semiconductor laser having an active layer and cladding layer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20560287A JPS6448485A (en) | 1987-08-19 | 1987-08-19 | Semiconductor laser |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6448485A true JPS6448485A (en) | 1989-02-22 |
Family
ID=16509588
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20560287A Pending JPS6448485A (en) | 1986-10-29 | 1987-08-19 | Semiconductor laser |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6448485A (en) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57128092A (en) * | 1981-01-30 | 1982-08-09 | Sanyo Electric Co Ltd | Imbedded type semiconductor laser device |
JPS59195895A (en) * | 1983-04-21 | 1984-11-07 | Nec Corp | Semiconductor laser |
JPS6261382A (en) * | 1985-09-11 | 1987-03-18 | Hitachi Ltd | Semiconductor laser |
-
1987
- 1987-08-19 JP JP20560287A patent/JPS6448485A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57128092A (en) * | 1981-01-30 | 1982-08-09 | Sanyo Electric Co Ltd | Imbedded type semiconductor laser device |
JPS59195895A (en) * | 1983-04-21 | 1984-11-07 | Nec Corp | Semiconductor laser |
JPS6261382A (en) * | 1985-09-11 | 1987-03-18 | Hitachi Ltd | Semiconductor laser |
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