JPS6448425A - Forming method of insulating film - Google Patents
Forming method of insulating filmInfo
- Publication number
- JPS6448425A JPS6448425A JP20608787A JP20608787A JPS6448425A JP S6448425 A JPS6448425 A JP S6448425A JP 20608787 A JP20608787 A JP 20608787A JP 20608787 A JP20608787 A JP 20608787A JP S6448425 A JPS6448425 A JP S6448425A
- Authority
- JP
- Japan
- Prior art keywords
- vapor phase
- ultraviolet light
- insulating film
- film
- reaction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Formation Of Insulating Films (AREA)
- Local Oxidation Of Silicon (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62206087A JPH0616505B2 (ja) | 1987-08-18 | 1987-08-18 | 絶縁膜形成方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62206087A JPH0616505B2 (ja) | 1987-08-18 | 1987-08-18 | 絶縁膜形成方法 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7287856A Division JP2767572B2 (ja) | 1995-10-09 | 1995-10-09 | 絶縁膜形成方法 |
JP7287857A Division JP2997743B2 (ja) | 1995-10-09 | 1995-10-09 | 絶縁膜 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6448425A true JPS6448425A (en) | 1989-02-22 |
JPH0616505B2 JPH0616505B2 (ja) | 1994-03-02 |
Family
ID=16517598
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62206087A Expired - Lifetime JPH0616505B2 (ja) | 1987-08-18 | 1987-08-18 | 絶縁膜形成方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0616505B2 (ja) |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01185945A (ja) * | 1988-01-21 | 1989-07-25 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
JPH04233225A (ja) * | 1990-06-27 | 1992-08-21 | American Teleph & Telegr Co <Att> | 集積回路の製造方法 |
US5414083A (en) * | 1993-01-22 | 1995-05-09 | Chemie Linz Gesellschaft M.B.H. | Method for the production of N-cyclic and N,N'-dicyclic ureas and their use as chemical solvents |
US5597917A (en) * | 1993-01-22 | 1997-01-28 | Dsm Chemie Linz Gmbh | Method for the production of N-cyclic and N,N'-dicyclic ureas and their use as chemical solvents |
US6323142B1 (en) | 1995-09-08 | 2001-11-27 | Semiconductor Energy Laboratory Co., Ltd. | APCVD method of forming silicon oxide using an organic silane, oxidizing agent, and catalyst-formed hydrogen radical |
JP2009539266A (ja) * | 2006-05-30 | 2009-11-12 | アプライド マテリアルズ インコーポレイテッド | 二酸化シリコンの膜質を高める新規な堆積プラズマ硬化サイクルプロセス |
JP2009542011A (ja) * | 2006-06-22 | 2009-11-26 | アプライド マテリアルズ インコーポレイテッド | ボトムアップギャップ充填のための誘電堆積プロセスとエッチバックプロセス |
US8889566B2 (en) | 2012-09-11 | 2014-11-18 | Applied Materials, Inc. | Low cost flowable dielectric films |
US8980382B2 (en) | 2009-12-02 | 2015-03-17 | Applied Materials, Inc. | Oxygen-doping for non-carbon radical-component CVD films |
US9018108B2 (en) | 2013-01-25 | 2015-04-28 | Applied Materials, Inc. | Low shrinkage dielectric films |
US9285168B2 (en) | 2010-10-05 | 2016-03-15 | Applied Materials, Inc. | Module for ozone cure and post-cure moisture treatment |
US9404178B2 (en) | 2011-07-15 | 2016-08-02 | Applied Materials, Inc. | Surface treatment and deposition for reduced outgassing |
US9412581B2 (en) | 2014-07-16 | 2016-08-09 | Applied Materials, Inc. | Low-K dielectric gapfill by flowable deposition |
US10283321B2 (en) | 2011-01-18 | 2019-05-07 | Applied Materials, Inc. | Semiconductor processing system and methods using capacitively coupled plasma |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5987834A (ja) * | 1982-11-11 | 1984-05-21 | Toshiba Corp | 薄膜形成方法 |
JPS61228633A (ja) * | 1985-04-02 | 1986-10-11 | Hitachi Ltd | 薄膜形成方法 |
JPS6428925A (en) * | 1987-07-24 | 1989-01-31 | Semiconductor Energy Lab | Formation of insulating film |
-
1987
- 1987-08-18 JP JP62206087A patent/JPH0616505B2/ja not_active Expired - Lifetime
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5987834A (ja) * | 1982-11-11 | 1984-05-21 | Toshiba Corp | 薄膜形成方法 |
JPS61228633A (ja) * | 1985-04-02 | 1986-10-11 | Hitachi Ltd | 薄膜形成方法 |
JPS6428925A (en) * | 1987-07-24 | 1989-01-31 | Semiconductor Energy Lab | Formation of insulating film |
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01185945A (ja) * | 1988-01-21 | 1989-07-25 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
JPH04233225A (ja) * | 1990-06-27 | 1992-08-21 | American Teleph & Telegr Co <Att> | 集積回路の製造方法 |
US5414083A (en) * | 1993-01-22 | 1995-05-09 | Chemie Linz Gesellschaft M.B.H. | Method for the production of N-cyclic and N,N'-dicyclic ureas and their use as chemical solvents |
US5597917A (en) * | 1993-01-22 | 1997-01-28 | Dsm Chemie Linz Gmbh | Method for the production of N-cyclic and N,N'-dicyclic ureas and their use as chemical solvents |
US6323142B1 (en) | 1995-09-08 | 2001-11-27 | Semiconductor Energy Laboratory Co., Ltd. | APCVD method of forming silicon oxide using an organic silane, oxidizing agent, and catalyst-formed hydrogen radical |
US6706648B2 (en) | 1995-09-08 | 2004-03-16 | Semiconductor Energy Laboratory Co., Ltd | APCVD method of forming silicon oxide using an organic silane, oxidizing agent, and catalyst-formed hydrogen radical |
JP2009539266A (ja) * | 2006-05-30 | 2009-11-12 | アプライド マテリアルズ インコーポレイテッド | 二酸化シリコンの膜質を高める新規な堆積プラズマ硬化サイクルプロセス |
JP2009542011A (ja) * | 2006-06-22 | 2009-11-26 | アプライド マテリアルズ インコーポレイテッド | ボトムアップギャップ充填のための誘電堆積プロセスとエッチバックプロセス |
US8980382B2 (en) | 2009-12-02 | 2015-03-17 | Applied Materials, Inc. | Oxygen-doping for non-carbon radical-component CVD films |
US9285168B2 (en) | 2010-10-05 | 2016-03-15 | Applied Materials, Inc. | Module for ozone cure and post-cure moisture treatment |
US10283321B2 (en) | 2011-01-18 | 2019-05-07 | Applied Materials, Inc. | Semiconductor processing system and methods using capacitively coupled plasma |
US9404178B2 (en) | 2011-07-15 | 2016-08-02 | Applied Materials, Inc. | Surface treatment and deposition for reduced outgassing |
US8889566B2 (en) | 2012-09-11 | 2014-11-18 | Applied Materials, Inc. | Low cost flowable dielectric films |
US9018108B2 (en) | 2013-01-25 | 2015-04-28 | Applied Materials, Inc. | Low shrinkage dielectric films |
US9412581B2 (en) | 2014-07-16 | 2016-08-09 | Applied Materials, Inc. | Low-K dielectric gapfill by flowable deposition |
Also Published As
Publication number | Publication date |
---|---|
JPH0616505B2 (ja) | 1994-03-02 |
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