JPS6447874A - Photo-cvd method - Google Patents

Photo-cvd method

Info

Publication number
JPS6447874A
JPS6447874A JP19998587A JP19998587A JPS6447874A JP S6447874 A JPS6447874 A JP S6447874A JP 19998587 A JP19998587 A JP 19998587A JP 19998587 A JP19998587 A JP 19998587A JP S6447874 A JPS6447874 A JP S6447874A
Authority
JP
Japan
Prior art keywords
starting material
film
gaseous starting
substrate
laser beams
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19998587A
Other languages
Japanese (ja)
Inventor
Tomohiro Oota
Hiroaki Sasaki
Toru Mitomo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JFE Steel Corp
Original Assignee
Kawasaki Steel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kawasaki Steel Corp filed Critical Kawasaki Steel Corp
Priority to JP19998587A priority Critical patent/JPS6447874A/en
Priority to PCT/JP1987/001040 priority patent/WO1988005087A1/en
Priority to EP88900591A priority patent/EP0298126B1/en
Priority to DE3750091T priority patent/DE3750091T2/en
Priority to KR1019880700472A priority patent/KR890700174A/en
Publication of JPS6447874A publication Critical patent/JPS6447874A/en
Priority to US07/973,058 priority patent/US5308651A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To increase the film-forming velocity of a thin film on a substrate and also to improve film quantity, by applying pulsed laser beams to a gaseous starting material in a CVD reaction chamber to subject the gaseous starting material to photodissociation and simultaneously applying a continuous beam to the gaseous starting material. CONSTITUTION:A gaseous starting material is introduced into a CVD reaction chamber in which a substrate is disposed. This gaseous starting material is irradiated with pulsed laser beams to undergo photodissociation, by which vapor- phase active chemical species are formed. These chemical species are deposited, by which a film is formed on the above substrate. In the above photo-CVD method, simultaneously with the irradiation with the above pulsed laser beams, a continuous beam is applied to the gaseous starting material or the substrate and the formed film layer on the substrate. By the irradiation of this continuous beam, the disorder of reaction due to extreme changes of radical concentration between pulsed beams can be minimized. By this method, film-forming velocity can be increased and film quality can be improved.
JP19998587A 1986-12-25 1987-08-12 Photo-cvd method Pending JPS6447874A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP19998587A JPS6447874A (en) 1987-08-12 1987-08-12 Photo-cvd method
PCT/JP1987/001040 WO1988005087A1 (en) 1986-12-25 1987-12-25 Optical cvd process
EP88900591A EP0298126B1 (en) 1986-12-25 1987-12-25 Optical cvd process
DE3750091T DE3750091T2 (en) 1986-12-25 1987-12-25 OPTICAL CVD PROCESS.
KR1019880700472A KR890700174A (en) 1986-12-25 1988-04-30 Optical CVD method
US07/973,058 US5308651A (en) 1986-12-25 1992-11-06 Photochemical vapor deposition process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19998587A JPS6447874A (en) 1987-08-12 1987-08-12 Photo-cvd method

Publications (1)

Publication Number Publication Date
JPS6447874A true JPS6447874A (en) 1989-02-22

Family

ID=16416871

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19998587A Pending JPS6447874A (en) 1986-12-25 1987-08-12 Photo-cvd method

Country Status (1)

Country Link
JP (1) JPS6447874A (en)

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