JPS6447874A - Photo-cvd method - Google Patents
Photo-cvd methodInfo
- Publication number
- JPS6447874A JPS6447874A JP19998587A JP19998587A JPS6447874A JP S6447874 A JPS6447874 A JP S6447874A JP 19998587 A JP19998587 A JP 19998587A JP 19998587 A JP19998587 A JP 19998587A JP S6447874 A JPS6447874 A JP S6447874A
- Authority
- JP
- Japan
- Prior art keywords
- starting material
- film
- gaseous starting
- substrate
- laser beams
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
PURPOSE:To increase the film-forming velocity of a thin film on a substrate and also to improve film quantity, by applying pulsed laser beams to a gaseous starting material in a CVD reaction chamber to subject the gaseous starting material to photodissociation and simultaneously applying a continuous beam to the gaseous starting material. CONSTITUTION:A gaseous starting material is introduced into a CVD reaction chamber in which a substrate is disposed. This gaseous starting material is irradiated with pulsed laser beams to undergo photodissociation, by which vapor- phase active chemical species are formed. These chemical species are deposited, by which a film is formed on the above substrate. In the above photo-CVD method, simultaneously with the irradiation with the above pulsed laser beams, a continuous beam is applied to the gaseous starting material or the substrate and the formed film layer on the substrate. By the irradiation of this continuous beam, the disorder of reaction due to extreme changes of radical concentration between pulsed beams can be minimized. By this method, film-forming velocity can be increased and film quality can be improved.
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19998587A JPS6447874A (en) | 1987-08-12 | 1987-08-12 | Photo-cvd method |
PCT/JP1987/001040 WO1988005087A1 (en) | 1986-12-25 | 1987-12-25 | Optical cvd process |
EP88900591A EP0298126B1 (en) | 1986-12-25 | 1987-12-25 | Optical cvd process |
DE3750091T DE3750091T2 (en) | 1986-12-25 | 1987-12-25 | OPTICAL CVD PROCESS. |
KR1019880700472A KR890700174A (en) | 1986-12-25 | 1988-04-30 | Optical CVD method |
US07/973,058 US5308651A (en) | 1986-12-25 | 1992-11-06 | Photochemical vapor deposition process |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19998587A JPS6447874A (en) | 1987-08-12 | 1987-08-12 | Photo-cvd method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6447874A true JPS6447874A (en) | 1989-02-22 |
Family
ID=16416871
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP19998587A Pending JPS6447874A (en) | 1986-12-25 | 1987-08-12 | Photo-cvd method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6447874A (en) |
-
1987
- 1987-08-12 JP JP19998587A patent/JPS6447874A/en active Pending
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