JPS6447868A - Production of thin film device - Google Patents

Production of thin film device

Info

Publication number
JPS6447868A
JPS6447868A JP62201728A JP20172887A JPS6447868A JP S6447868 A JPS6447868 A JP S6447868A JP 62201728 A JP62201728 A JP 62201728A JP 20172887 A JP20172887 A JP 20172887A JP S6447868 A JPS6447868 A JP S6447868A
Authority
JP
Japan
Prior art keywords
substrate
temp
thin film
change
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62201728A
Other languages
Japanese (ja)
Inventor
Takeshi Tanaka
Akihiro Miyauchi
Hidekatsu Onose
Michio Ogami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP62201728A priority Critical patent/JPS6447868A/en
Publication of JPS6447868A publication Critical patent/JPS6447868A/en
Pending legal-status Critical Current

Links

Landscapes

  • Physical Vapour Deposition (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)

Abstract

PURPOSE:To accurately measure the substrate temp. on a non-contact basis and to produce a high-quality thin film by detecting the change in the magnetic properties of a substrate or substrate carrier due to temp. change. CONSTITUTION:A gaseous reactant is introduced into a chamber 10 from a gas inlet 8, and discharged from a gas outlet 9. The substrate 1 is placed on the substrate carrier 2, and heated to a prescribed temp. by the radiation from a halogen lamp 7 outside the chamber 10. As a result, the gaseous reactant is excited or decomposed to to form the thin film of the reaction product on the surface of the substrate 1. In the thin film device, the lines of magnetic force 4 generated by an electromagnet 3 outside the chamber 10 are passed through the substrate 1 and the carrier 2, and the measured by a superconductive quantum interferometer 5 provided with a cooler 6. The change in the magnetic flux density around the substrate 1 due to the temp. change is detected by this method, and the temp. of the substrate 1 can be accurately measured.
JP62201728A 1987-08-14 1987-08-14 Production of thin film device Pending JPS6447868A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62201728A JPS6447868A (en) 1987-08-14 1987-08-14 Production of thin film device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62201728A JPS6447868A (en) 1987-08-14 1987-08-14 Production of thin film device

Publications (1)

Publication Number Publication Date
JPS6447868A true JPS6447868A (en) 1989-02-22

Family

ID=16445949

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62201728A Pending JPS6447868A (en) 1987-08-14 1987-08-14 Production of thin film device

Country Status (1)

Country Link
JP (1) JPS6447868A (en)

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