JPS6447107A - High efficiency semiconductor amplifier - Google Patents

High efficiency semiconductor amplifier

Info

Publication number
JPS6447107A
JPS6447107A JP20380387A JP20380387A JPS6447107A JP S6447107 A JPS6447107 A JP S6447107A JP 20380387 A JP20380387 A JP 20380387A JP 20380387 A JP20380387 A JP 20380387A JP S6447107 A JPS6447107 A JP S6447107A
Authority
JP
Japan
Prior art keywords
line
capacitor
fets
short
impedance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20380387A
Other languages
Japanese (ja)
Inventor
Yukio Ikeda
Sunao Takagi
Kiyoharu Kiyono
Fumio Takeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP20380387A priority Critical patent/JPS6447107A/en
Publication of JPS6447107A publication Critical patent/JPS6447107A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To improve the output level and the efficiency by splitting a line for output side impedance matching and providing a high frequency processing circuit to each path so as to approach the impedance of plural unit FETs with respect to a 2nd harmonic wave into the short-circuit state. CONSTITUTION:An impedance matching line 26 and a capacitor 30 are used for the impedance matching between the unit FETs 20, 21 and an output side radio frequency terminal 12. Similarly, the line 27 and the capacitor 31 are used for the matching between the FETs 22, 23 and the terminal 12. Then a capacitor 28 whose one terminal is connected to ground and a strip line 24 having a 1/4 wavelength at the fundamental wave are connected to the line 26 and similarly, a capacitor 29 and a line 25 are connected to the line 27. Thus, the drains of the FETs 20, 21 are short-circuited with respect to the 2nd harmonic waves. Thus, the impedance with respect to the 2nd harmonic wave of the unit FETs is approached to the short-circuit state in this way, then the output level and the efficiency are improved.
JP20380387A 1987-08-17 1987-08-17 High efficiency semiconductor amplifier Pending JPS6447107A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20380387A JPS6447107A (en) 1987-08-17 1987-08-17 High efficiency semiconductor amplifier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20380387A JPS6447107A (en) 1987-08-17 1987-08-17 High efficiency semiconductor amplifier

Publications (1)

Publication Number Publication Date
JPS6447107A true JPS6447107A (en) 1989-02-21

Family

ID=16479990

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20380387A Pending JPS6447107A (en) 1987-08-17 1987-08-17 High efficiency semiconductor amplifier

Country Status (1)

Country Link
JP (1) JPS6447107A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011176752A (en) * 2010-02-25 2011-09-08 Mitsubishi Electric Corp Amplifier

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011176752A (en) * 2010-02-25 2011-09-08 Mitsubishi Electric Corp Amplifier

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