JPS6444920A - Active matrix substrate - Google Patents

Active matrix substrate

Info

Publication number
JPS6444920A
JPS6444920A JP62202705A JP20270587A JPS6444920A JP S6444920 A JPS6444920 A JP S6444920A JP 62202705 A JP62202705 A JP 62202705A JP 20270587 A JP20270587 A JP 20270587A JP S6444920 A JPS6444920 A JP S6444920A
Authority
JP
Japan
Prior art keywords
patterned
picture element
electrodes
layer
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62202705A
Other languages
Japanese (ja)
Inventor
Mutsumi Matsuo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP62202705A priority Critical patent/JPS6444920A/en
Publication of JPS6444920A publication Critical patent/JPS6444920A/en
Pending legal-status Critical Current

Links

Landscapes

  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)

Abstract

PURPOSE:To enable display with high contrast and high quality at fine picture element pitches by forming layers which constitute data lines and layers which constitute picture element electrodes in such a manner as to have the layer disposition parted most in the thickness direction of a substrate. CONSTITUTION:A thin metallic film is deposited on the glass substrate 1 and the data lines 8 are patterned and formed. A CVD silicon oxide film and a thin metallic film are deposited as an inter-layer insulating film 13 thereon and gate electrodes 2 and timing lines 3 are patterned and formed. A gate insulating film 4 and a thin amorphous silicon film 5 are then patterned and formed. A transparent conductive film is further deposited thereon and the picture element electrodes 6 are patterned and formed. After contact holes 14 are opened, a thin metallic film is deposited and source electrodes 7 and drain electrodes 9 are patterned and formed. The layer which constitute the data lines and the layer which constitutes and picture element electrodes, therefore, has the layer disposition parted most in the thickness direction. The spacings between the data lines and the picture element electrodes are thereby narrowed in plane and the quantity of the light transmitting through said spacings is decreased and, therefore the display with the high contrast at a high density is enabled.
JP62202705A 1987-08-14 1987-08-14 Active matrix substrate Pending JPS6444920A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62202705A JPS6444920A (en) 1987-08-14 1987-08-14 Active matrix substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62202705A JPS6444920A (en) 1987-08-14 1987-08-14 Active matrix substrate

Publications (1)

Publication Number Publication Date
JPS6444920A true JPS6444920A (en) 1989-02-17

Family

ID=16461790

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62202705A Pending JPS6444920A (en) 1987-08-14 1987-08-14 Active matrix substrate

Country Status (1)

Country Link
JP (1) JPS6444920A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018078334A (en) * 2012-08-10 2018-05-17 三星ディスプレイ株式會社Samsung Display Co.,Ltd. Thin-film transistor substrate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018078334A (en) * 2012-08-10 2018-05-17 三星ディスプレイ株式會社Samsung Display Co.,Ltd. Thin-film transistor substrate

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