JPS6444620A - Mos fet gate driving circuit - Google Patents

Mos fet gate driving circuit

Info

Publication number
JPS6444620A
JPS6444620A JP62200788A JP20078887A JPS6444620A JP S6444620 A JPS6444620 A JP S6444620A JP 62200788 A JP62200788 A JP 62200788A JP 20078887 A JP20078887 A JP 20078887A JP S6444620 A JPS6444620 A JP S6444620A
Authority
JP
Japan
Prior art keywords
amplifier
waveform
mos fet
input
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62200788A
Other languages
Japanese (ja)
Other versions
JPH0534854B2 (en
Inventor
Takashi Enomoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nihon Inter Electronics Corp
Original Assignee
Nihon Inter Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nihon Inter Electronics Corp filed Critical Nihon Inter Electronics Corp
Priority to JP62200788A priority Critical patent/JPS6444620A/en
Publication of JPS6444620A publication Critical patent/JPS6444620A/en
Publication of JPH0534854B2 publication Critical patent/JPH0534854B2/ja
Granted legal-status Critical Current

Links

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  • Electronic Switches (AREA)

Abstract

PURPOSE:To quickly switch a MOS FET by optically insulating the signal input side and a power system from each other by a photoelectric coupling element and performing such correction by a differential waveform generating means that quick rise and fall of a voltage waveform are attained. CONSTITUTION:A part of an input signal IS applied to a signal input terminal 1 is applied to the input of an amplifier A, and a light emitting diode LD on the input side of a photoelectric coupling element IG connected to the output of this amplifier is driven to emit light, and a photoelectric power generating element array PV is excited to generate an electromotive force between both ends, and a voltage waveform PVO is obtained between the gate G and the source S of a MOS FET Q. A part of the input signal IS is led to a differentiating circuit DF to obtain a differential waveform TO, and this waveform is inputted to an amplifier A2. The output of the amplifier A2 generates a voltage having the bipolar differential waveform on the secondary winding side of a coupling transformer T.
JP62200788A 1987-08-13 1987-08-13 Mos fet gate driving circuit Granted JPS6444620A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62200788A JPS6444620A (en) 1987-08-13 1987-08-13 Mos fet gate driving circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62200788A JPS6444620A (en) 1987-08-13 1987-08-13 Mos fet gate driving circuit

Publications (2)

Publication Number Publication Date
JPS6444620A true JPS6444620A (en) 1989-02-17
JPH0534854B2 JPH0534854B2 (en) 1993-05-25

Family

ID=16430201

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62200788A Granted JPS6444620A (en) 1987-08-13 1987-08-13 Mos fet gate driving circuit

Country Status (1)

Country Link
JP (1) JPS6444620A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008193557A (en) * 2007-02-07 2008-08-21 Fuji Electric Systems Co Ltd Pulse transmission circuit
CN105391276A (en) * 2015-12-21 2016-03-09 哈尔滨工业大学 High-temperature silicon carbide MOSFET drive circuit
CN112630575A (en) * 2020-12-25 2021-04-09 浙江大学 High-capacity power semiconductor module aluminum binding wire electric explosion test system and method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008193557A (en) * 2007-02-07 2008-08-21 Fuji Electric Systems Co Ltd Pulse transmission circuit
CN105391276A (en) * 2015-12-21 2016-03-09 哈尔滨工业大学 High-temperature silicon carbide MOSFET drive circuit
CN105391276B (en) * 2015-12-21 2018-01-30 哈尔滨工业大学 High-temperature carborundum MOSFET drive circuits
CN112630575A (en) * 2020-12-25 2021-04-09 浙江大学 High-capacity power semiconductor module aluminum binding wire electric explosion test system and method

Also Published As

Publication number Publication date
JPH0534854B2 (en) 1993-05-25

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