JPS6444057A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS6444057A
JPS6444057A JP20109187A JP20109187A JPS6444057A JP S6444057 A JPS6444057 A JP S6444057A JP 20109187 A JP20109187 A JP 20109187A JP 20109187 A JP20109187 A JP 20109187A JP S6444057 A JPS6444057 A JP S6444057A
Authority
JP
Japan
Prior art keywords
region
reduced
layer
metal silicide
semiconductor integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20109187A
Other languages
Japanese (ja)
Inventor
Takao Tanigawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP20109187A priority Critical patent/JPS6444057A/en
Publication of JPS6444057A publication Critical patent/JPS6444057A/en
Pending legal-status Critical Current

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  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain a structure adapted for highly integrating a MOS semiconductor integrated circuit device by selectively avoiding a metal silicification of a region in which it is not originally desired to decrease a specific resistance value. CONSTITUTION:The regions of impurity regions 13A, 13B are reduced in its specific resistance values by forming metal silicide layers 17A, 17B on the surface of a normal wiring region or the source or drain region of a MOS transistor. A metal silicide layer is not formed on an impurity region layer 13C. The layer 13C is to increase the length of a resistance region by the decrease of the specific resistance like a resistor in a signal delay circuit, and the metal silicide layer is not selectively formed thereon. Thus, when the electric resistance value of the impurity region is reduced, a predetermined region obtains a structure in which its resistance is not reduced.
JP20109187A 1987-08-11 1987-08-11 Semiconductor integrated circuit device Pending JPS6444057A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20109187A JPS6444057A (en) 1987-08-11 1987-08-11 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20109187A JPS6444057A (en) 1987-08-11 1987-08-11 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS6444057A true JPS6444057A (en) 1989-02-16

Family

ID=16435246

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20109187A Pending JPS6444057A (en) 1987-08-11 1987-08-11 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS6444057A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5116707A (en) * 1989-07-28 1992-05-26 Bando Chemical Industries, Ltd. Laminated organic photosensitive material
US7411929B2 (en) 2001-03-23 2008-08-12 Qualcomm Incorporated Method and apparatus for utilizing channel state information in a wireless communication system

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6143464A (en) * 1984-08-08 1986-03-03 Hitachi Ltd Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6143464A (en) * 1984-08-08 1986-03-03 Hitachi Ltd Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5116707A (en) * 1989-07-28 1992-05-26 Bando Chemical Industries, Ltd. Laminated organic photosensitive material
US7411929B2 (en) 2001-03-23 2008-08-12 Qualcomm Incorporated Method and apparatus for utilizing channel state information in a wireless communication system

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