JPS6443960A - Ion generating device - Google Patents

Ion generating device

Info

Publication number
JPS6443960A
JPS6443960A JP62197279A JP19727987A JPS6443960A JP S6443960 A JPS6443960 A JP S6443960A JP 62197279 A JP62197279 A JP 62197279A JP 19727987 A JP19727987 A JP 19727987A JP S6443960 A JPS6443960 A JP S6443960A
Authority
JP
Japan
Prior art keywords
plasma generating
generating member
magnetic field
pick
power consumption
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62197279A
Other languages
Japanese (ja)
Inventor
Hiroki Miyade
Kazuo Fujii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Heavy Industries Ltd
Original Assignee
Sumitomo Heavy Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Heavy Industries Ltd filed Critical Sumitomo Heavy Industries Ltd
Priority to JP62197279A priority Critical patent/JPS6443960A/en
Publication of JPS6443960A publication Critical patent/JPS6443960A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electron Sources, Ion Sources (AREA)

Abstract

PURPOSE:To make it possible to pick up a large current of ion beams in a low power consumption by using no mirror magnetic field but only a cusp magnetic field. CONSTITUTION:At least four permanent magnets 2 with one end furnished at the outer surface of a vacuum container 3 respectively to form multicusp magnetic field at a plasma generating member 1, a return yoke 7 furnished at the outer surface of the vacuum container 3 to connect the other ends of the permanent magnets 2 each other, a microwave leading-in member 6 to lead the microwave to the plasma generating member 1, an access port 5 to feed a gaseous substance to the plasma generating member 1, and a drawing-out electrode 8 to pick up ions from the plasma generating member 1 are arranged. As a result, a large current of ion beams can be picked up in a low power consumption without furnishing filaments.
JP62197279A 1987-08-08 1987-08-08 Ion generating device Pending JPS6443960A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62197279A JPS6443960A (en) 1987-08-08 1987-08-08 Ion generating device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62197279A JPS6443960A (en) 1987-08-08 1987-08-08 Ion generating device

Publications (1)

Publication Number Publication Date
JPS6443960A true JPS6443960A (en) 1989-02-16

Family

ID=16371821

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62197279A Pending JPS6443960A (en) 1987-08-08 1987-08-08 Ion generating device

Country Status (1)

Country Link
JP (1) JPS6443960A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0617321U (en) * 1992-02-28 1994-03-04 孝次 広野 Auxiliary support for electrical wiring box
JP2008011929A (en) * 2006-07-03 2008-01-24 Takao Nishikawa Head cover for golf club
WO2011139587A1 (en) * 2010-04-26 2011-11-10 Varian Semiconductor Equipment Associates, Inc. Small form factor plasma source for high density wide ribbon ion beam generation
CN108933076A (en) * 2017-05-23 2018-12-04 日新离子机器株式会社 plasma source

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0617321U (en) * 1992-02-28 1994-03-04 孝次 広野 Auxiliary support for electrical wiring box
JP2008011929A (en) * 2006-07-03 2008-01-24 Takao Nishikawa Head cover for golf club
WO2011139587A1 (en) * 2010-04-26 2011-11-10 Varian Semiconductor Equipment Associates, Inc. Small form factor plasma source for high density wide ribbon ion beam generation
US8590485B2 (en) 2010-04-26 2013-11-26 Varian Semiconductor Equipment Associates, Inc. Small form factor plasma source for high density wide ribbon ion beam generation
CN108933076A (en) * 2017-05-23 2018-12-04 日新离子机器株式会社 plasma source
JP2018198114A (en) * 2017-05-23 2018-12-13 日新イオン機器株式会社 Plasma source
CN108933076B (en) * 2017-05-23 2020-05-29 日新离子机器株式会社 Plasma source

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