JPS644351B2 - - Google Patents
Info
- Publication number
- JPS644351B2 JPS644351B2 JP5843881A JP5843881A JPS644351B2 JP S644351 B2 JPS644351 B2 JP S644351B2 JP 5843881 A JP5843881 A JP 5843881A JP 5843881 A JP5843881 A JP 5843881A JP S644351 B2 JPS644351 B2 JP S644351B2
- Authority
- JP
- Japan
- Prior art keywords
- polycrystalline silicon
- region
- silicon layer
- conductivity type
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 76
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 32
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 32
- 239000012535 impurity Substances 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 18
- 230000003647 oxidation Effects 0.000 claims description 17
- 238000007254 oxidation reaction Methods 0.000 claims description 17
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 150000003376 silicon Chemical class 0.000 claims 3
- 238000002955 isolation Methods 0.000 description 10
- 238000007796 conventional method Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5843881A JPS57173972A (en) | 1981-04-20 | 1981-04-20 | Manufacture of semiconductor ic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5843881A JPS57173972A (en) | 1981-04-20 | 1981-04-20 | Manufacture of semiconductor ic device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57173972A JPS57173972A (en) | 1982-10-26 |
| JPS644351B2 true JPS644351B2 (tr) | 1989-01-25 |
Family
ID=13084398
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5843881A Granted JPS57173972A (en) | 1981-04-20 | 1981-04-20 | Manufacture of semiconductor ic device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57173972A (tr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0331215U (tr) * | 1989-07-28 | 1991-03-27 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5990925A (ja) * | 1982-11-17 | 1984-05-25 | Matsushita Electronics Corp | 半導体装置の製造方法 |
-
1981
- 1981-04-20 JP JP5843881A patent/JPS57173972A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0331215U (tr) * | 1989-07-28 | 1991-03-27 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57173972A (en) | 1982-10-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS62588B2 (tr) | ||
| JPH0618198B2 (ja) | 半導体装置 | |
| US4191595A (en) | Method of manufacturing PN junctions in a semiconductor region to reach an isolation layer without exposing the semiconductor region surface | |
| KR970011641B1 (ko) | 반도체 장치 및 제조방법 | |
| EP0030147A1 (en) | Method for manufacturing a semiconductor integrated circuit | |
| JPH0241170B2 (tr) | ||
| JPH0645537A (ja) | 集積回路の製造方法 | |
| JPH0128507B2 (tr) | ||
| JPS644351B2 (tr) | ||
| JPS5911644A (ja) | 半導体装置の製造方法 | |
| JP2663632B2 (ja) | 半導体装置及びその製造方法 | |
| JPH0778833A (ja) | バイポーラトランジスタとその製造方法 | |
| JPH038582B2 (tr) | ||
| JPH0128508B2 (tr) | ||
| JPS627704B2 (tr) | ||
| JP2654056B2 (ja) | 半導体装置の製造方法 | |
| JPS6158981B2 (tr) | ||
| JPS5984469A (ja) | 半導体装置の製造方法 | |
| JP2915002B2 (ja) | バイポーラ型半導体集積回路装置及びその製造方法 | |
| JPH0425711B2 (tr) | ||
| JP2745946B2 (ja) | 半導体集積回路の製造方法 | |
| JP3128818B2 (ja) | 半導体集積回路 | |
| JPH04164334A (ja) | バイポーラトランジスタ | |
| JPH0626213B2 (ja) | 半導体装置 | |
| JPS6259465B2 (tr) |