JPS6442167A - Semiconductor memory device - Google Patents

Abstract

PURPOSE:To facilitate the pattern transfer and processing for a bit line and a word line without requiring any complicated manufacture process by electrically connecting the bit wire to the other electrode of a transfer gate transistor through a groove part and forming the word line on a storage node and on the bit line via an insulating film. CONSTITUTION:A bit line 12b is electrically connected with the other electrode 15 of a transfer gate transistor through a groove part 2. Hereby, there is required no separate electrical connector means such as a contact part, and there are produced no steps on the groove part due to the bit line. Additionally, a word line 10 is formed via an insulating film 17 formed on a storage node 12a and the bit line 12b. Hereby, the device can be manufactured without consideration of electrical contact of the word line with the surface node 12a and the bit line 12b upon formation of the word line 18. Thus, pattern transfer and processing of the bit line and word line is facilitated, assuring high density and larger integration of the device.