JPS644024A - Removal of resist - Google Patents

Removal of resist

Info

Publication number
JPS644024A
JPS644024A JP15761687A JP15761687A JPS644024A JP S644024 A JPS644024 A JP S644024A JP 15761687 A JP15761687 A JP 15761687A JP 15761687 A JP15761687 A JP 15761687A JP S644024 A JPS644024 A JP S644024A
Authority
JP
Japan
Prior art keywords
gas
mercury
ultraviolet rays
tube
specimen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15761687A
Other languages
Japanese (ja)
Inventor
Kenichi Kawasumi
Akiisa Inada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP15761687A priority Critical patent/JPS644024A/en
Publication of JPS644024A publication Critical patent/JPS644024A/en
Pending legal-status Critical Current

Links

Landscapes

  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To obtain a high throughput by a method wherein a gas of oxygen containing O3 to which N2O is added is used as a reaction gas, this gas is supplied to the surface of a heated specimen and ultraviolet rays generating an exciting oxygen atom is irradiated effectively onto the surface of the specimen so that an electric discharge of a high current density can be executed by using a mercury-vapor lamp of little power consumption. CONSTITUTION:From an ultraviolet discharge lamp 1, transparent quartz transmitting ultraviolet rays with a wavelength of more than 160nm is used as a light-emitting tube; in addition to mercury, an inactive gas such as argon, neon or the like is sealed into the light-emitting tube; this tube is operated at a pressure deciding a vapor pressure of mercury at a temperature of 30-70 deg.C and at a current density for the lamp of, e.g., more than 2A/cm<2>. The tube is operated in such a way that the total illuminance of ultraviolet rays at wavelengths of 185nm and 194nm in an emission spectrum of mercury is, e.g., more than 15% of the illuminance of ultraviolet rays at 254nm. The reaction gas 3 is a mixed gas of oxygen containing ozone and nitrous oxide; a wafer 4 which has been coated with an organic resist and has been baked is mounted on a rotary specimen stage 5; the wafer 4 is heated, and the resist is removed.
JP15761687A 1987-06-26 1987-06-26 Removal of resist Pending JPS644024A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15761687A JPS644024A (en) 1987-06-26 1987-06-26 Removal of resist

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15761687A JPS644024A (en) 1987-06-26 1987-06-26 Removal of resist

Publications (1)

Publication Number Publication Date
JPS644024A true JPS644024A (en) 1989-01-09

Family

ID=15653621

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15761687A Pending JPS644024A (en) 1987-06-26 1987-06-26 Removal of resist

Country Status (1)

Country Link
JP (1) JPS644024A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6350391B1 (en) 1995-11-09 2002-02-26 Oramir Semiconductor Equipment Ltd. Laser stripping improvement by modified gas composition

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6350391B1 (en) 1995-11-09 2002-02-26 Oramir Semiconductor Equipment Ltd. Laser stripping improvement by modified gas composition

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