JPS644024A - Removal of resist - Google Patents
Removal of resistInfo
- Publication number
- JPS644024A JPS644024A JP15761687A JP15761687A JPS644024A JP S644024 A JPS644024 A JP S644024A JP 15761687 A JP15761687 A JP 15761687A JP 15761687 A JP15761687 A JP 15761687A JP S644024 A JPS644024 A JP S644024A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- mercury
- ultraviolet rays
- tube
- specimen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To obtain a high throughput by a method wherein a gas of oxygen containing O3 to which N2O is added is used as a reaction gas, this gas is supplied to the surface of a heated specimen and ultraviolet rays generating an exciting oxygen atom is irradiated effectively onto the surface of the specimen so that an electric discharge of a high current density can be executed by using a mercury-vapor lamp of little power consumption. CONSTITUTION:From an ultraviolet discharge lamp 1, transparent quartz transmitting ultraviolet rays with a wavelength of more than 160nm is used as a light-emitting tube; in addition to mercury, an inactive gas such as argon, neon or the like is sealed into the light-emitting tube; this tube is operated at a pressure deciding a vapor pressure of mercury at a temperature of 30-70 deg.C and at a current density for the lamp of, e.g., more than 2A/cm<2>. The tube is operated in such a way that the total illuminance of ultraviolet rays at wavelengths of 185nm and 194nm in an emission spectrum of mercury is, e.g., more than 15% of the illuminance of ultraviolet rays at 254nm. The reaction gas 3 is a mixed gas of oxygen containing ozone and nitrous oxide; a wafer 4 which has been coated with an organic resist and has been baked is mounted on a rotary specimen stage 5; the wafer 4 is heated, and the resist is removed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15761687A JPS644024A (en) | 1987-06-26 | 1987-06-26 | Removal of resist |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15761687A JPS644024A (en) | 1987-06-26 | 1987-06-26 | Removal of resist |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS644024A true JPS644024A (en) | 1989-01-09 |
Family
ID=15653621
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15761687A Pending JPS644024A (en) | 1987-06-26 | 1987-06-26 | Removal of resist |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS644024A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6350391B1 (en) | 1995-11-09 | 2002-02-26 | Oramir Semiconductor Equipment Ltd. | Laser stripping improvement by modified gas composition |
-
1987
- 1987-06-26 JP JP15761687A patent/JPS644024A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6350391B1 (en) | 1995-11-09 | 2002-02-26 | Oramir Semiconductor Equipment Ltd. | Laser stripping improvement by modified gas composition |
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