JPS6436032A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS6436032A JPS6436032A JP19107187A JP19107187A JPS6436032A JP S6436032 A JPS6436032 A JP S6436032A JP 19107187 A JP19107187 A JP 19107187A JP 19107187 A JP19107187 A JP 19107187A JP S6436032 A JPS6436032 A JP S6436032A
- Authority
- JP
- Japan
- Prior art keywords
- film
- insulating film
- layer
- pad
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To obtain a semiconductor device whose resistance to radioactive rays and chemicals is excellent and where a secret can be kept easily by a method wherein a passivating film to protect a circuit-formed face of a semiconductor chip is constituted by a lower-layer insulating film and an upper-layer metal film in order to protect the insulating film from the chemicals. CONSTITUTION:An insulating film 2 as a lower layer of a passivating film is formed on a circuit-formed face of a semiconductor substrate 1 where a pattern of a circuit has been formed by ion implantation or the like. Then, a metal film 3 is formed on the insulating film 2 and this film is used as an upper layer of the passivating film. This metal film 3 is formed by, e.g., gold by a vacuum evaporation operation; after that, a photoresist 4 is coated on the whole surface by a spin-coating operation or the like; an opening 4a is made in a region to form a pad. Then, the metal film 3 at the opening 4a is polished; after that, the insulating film at the opening 4a is etched by, e.g., an RIE operation. By this setup, the pad formed in advance in the semiconductor substrate 1 is exposed; if the resist 4 is removed by using acetone or the like, a wire-bonding operation of the pad can be executed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19107187A JPS6436032A (en) | 1987-07-30 | 1987-07-30 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19107187A JPS6436032A (en) | 1987-07-30 | 1987-07-30 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6436032A true JPS6436032A (en) | 1989-02-07 |
Family
ID=16268386
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19107187A Pending JPS6436032A (en) | 1987-07-30 | 1987-07-30 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6436032A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6720656B2 (en) | 1998-12-21 | 2004-04-13 | Sharp Kabushiki Kaisha | Semiconductor device with analysis prevention feature |
-
1987
- 1987-07-30 JP JP19107187A patent/JPS6436032A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6720656B2 (en) | 1998-12-21 | 2004-04-13 | Sharp Kabushiki Kaisha | Semiconductor device with analysis prevention feature |
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