JPS6432647A - Semiconductor integrated circuit device - Google Patents
Semiconductor integrated circuit deviceInfo
- Publication number
- JPS6432647A JPS6432647A JP62187582A JP18758287A JPS6432647A JP S6432647 A JPS6432647 A JP S6432647A JP 62187582 A JP62187582 A JP 62187582A JP 18758287 A JP18758287 A JP 18758287A JP S6432647 A JPS6432647 A JP S6432647A
- Authority
- JP
- Japan
- Prior art keywords
- circuits
- cmos
- logical
- ecl
- power supply
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/118—Masterslice integrated circuits
- H01L27/11896—Masterslice integrated circuits using combined field effect/bipolar technology
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Microcomputers (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To shorten the delay time, and to improve the efficiency of mounting by integrating and forming logical blocks including logical circuits at different logical levels such as an ECL, a CMOS, etc., on the same chip and operating the logical blocks by a power supply having the same potential. CONSTITUTION:An ECL circuit block 401, a bipolar-CMOS circuit block 402 and a CMOS circuit block 403 are connected by interface circuits 404. Input/ output circuits 405 at different input/output signal levels are connected to the blocks 401, 403. A first power supply 406 at +5V, a second power supply 408 at -5.2V and a third power supply 407 at OV are fitted as power supplies. These blocks, circuits and power supplies are set up onto a semiconductor substrate (a chip) 409. Circuits inputting and outputting ECL signals are connected to the power lines 407, 408, and circuits inputting and outputting TTL signals and CMOS signals to the power lines 406, 407. The logical block circuits 401, 402, 403 are operated by the power supplies at the same potential though they are composed respectively of logical circuits of different kinds such as an ECL, a bipolar-CMOS and a CMOS.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62187582A JPH07105444B2 (en) | 1987-07-29 | 1987-07-29 | Semiconductor integrated circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62187582A JPH07105444B2 (en) | 1987-07-29 | 1987-07-29 | Semiconductor integrated circuit device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6432647A true JPS6432647A (en) | 1989-02-02 |
JPH07105444B2 JPH07105444B2 (en) | 1995-11-13 |
Family
ID=16208629
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62187582A Expired - Fee Related JPH07105444B2 (en) | 1987-07-29 | 1987-07-29 | Semiconductor integrated circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH07105444B2 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0325952A (en) * | 1989-06-23 | 1991-02-04 | Nec Corp | Bipolar cmos hybrid semiconductor integrated circuit |
US5682111A (en) * | 1991-10-30 | 1997-10-28 | Harris Corporation | Integrated circuit with power monitor |
WO1998008258A1 (en) * | 1996-08-21 | 1998-02-26 | Siemens Aktiengesellschaft | System voltages for emitter coupled logic (ecl)-compatible input and output circuits in cmos technology |
US5994755A (en) * | 1991-10-30 | 1999-11-30 | Intersil Corporation | Analog-to-digital converter and method of fabrication |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61171150A (en) * | 1985-01-25 | 1986-08-01 | Hitachi Ltd | Semiconductor ic device |
JPS62122262A (en) * | 1985-11-22 | 1987-06-03 | Hitachi Ltd | Semiconductor integrated circuit device |
-
1987
- 1987-07-29 JP JP62187582A patent/JPH07105444B2/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61171150A (en) * | 1985-01-25 | 1986-08-01 | Hitachi Ltd | Semiconductor ic device |
JPS62122262A (en) * | 1985-11-22 | 1987-06-03 | Hitachi Ltd | Semiconductor integrated circuit device |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0325952A (en) * | 1989-06-23 | 1991-02-04 | Nec Corp | Bipolar cmos hybrid semiconductor integrated circuit |
US5682111A (en) * | 1991-10-30 | 1997-10-28 | Harris Corporation | Integrated circuit with power monitor |
US5994755A (en) * | 1991-10-30 | 1999-11-30 | Intersil Corporation | Analog-to-digital converter and method of fabrication |
US6329260B1 (en) | 1991-10-30 | 2001-12-11 | Intersil Americas Inc. | Analog-to-digital converter and method of fabrication |
WO1998008258A1 (en) * | 1996-08-21 | 1998-02-26 | Siemens Aktiengesellschaft | System voltages for emitter coupled logic (ecl)-compatible input and output circuits in cmos technology |
Also Published As
Publication number | Publication date |
---|---|
JPH07105444B2 (en) | 1995-11-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |