JPS6428966A - Photodetector - Google Patents

Photodetector

Info

Publication number
JPS6428966A
JPS6428966A JP62184942A JP18494287A JPS6428966A JP S6428966 A JPS6428966 A JP S6428966A JP 62184942 A JP62184942 A JP 62184942A JP 18494287 A JP18494287 A JP 18494287A JP S6428966 A JPS6428966 A JP S6428966A
Authority
JP
Japan
Prior art keywords
light
incident
photodetector unit
sandblasted
diffusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62184942A
Other languages
Japanese (ja)
Inventor
Keiji Suyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Priority to JP62184942A priority Critical patent/JPS6428966A/en
Publication of JPS6428966A publication Critical patent/JPS6428966A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To suppress reduction in the quantity of incident light so as to reduce a change in photocurrent due to an incident angle of the incident light, by providing a surface of a protection glass with processing which is used to diffuse the incident light on a surface of a photodetector unit. CONSTITUTION:A surface of a protection glass 2 facing a photodetector unit 11 is sandblasted as shown in a symbol 3. One part of light IN incident to a light-receiving element 1 is reflected on the surface of the protection glass, and the other part is transmitted there to attain to the sandblasted surface 3. The incident light attaining to the sandblasted surface 3 is diffused on this surface to become diffusion light DF, and the ligh DF is made incident to the light receiving element unit 11. Photoelectric conversion is performed in the photodetector unit 11 by the incident diffusion light DF, so that photocurrent is generated according to intensity of the incident light IN, that is, the intensity of the diffusion light DF. Since almost all of the diffusion light DF is made incident to the surface of the photodetector unit 11, the sufficient quantity of light can be given to the photodetector unit 11.
JP62184942A 1987-07-24 1987-07-24 Photodetector Pending JPS6428966A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62184942A JPS6428966A (en) 1987-07-24 1987-07-24 Photodetector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62184942A JPS6428966A (en) 1987-07-24 1987-07-24 Photodetector

Publications (1)

Publication Number Publication Date
JPS6428966A true JPS6428966A (en) 1989-01-31

Family

ID=16162050

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62184942A Pending JPS6428966A (en) 1987-07-24 1987-07-24 Photodetector

Country Status (1)

Country Link
JP (1) JPS6428966A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01248573A (en) * 1988-03-29 1989-10-04 Rohm Co Ltd Laser detector

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5040171B2 (en) * 1972-03-23 1975-12-22

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5040171B2 (en) * 1972-03-23 1975-12-22

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01248573A (en) * 1988-03-29 1989-10-04 Rohm Co Ltd Laser detector

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