JPS64285A - Dry etching method - Google Patents

Dry etching method

Info

Publication number
JPS64285A
JPS64285A JP15587187A JP15587187A JPS64285A JP S64285 A JPS64285 A JP S64285A JP 15587187 A JP15587187 A JP 15587187A JP 15587187 A JP15587187 A JP 15587187A JP S64285 A JPS64285 A JP S64285A
Authority
JP
Japan
Prior art keywords
etching
gas
alcohol
dry etching
pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15587187A
Other languages
Japanese (ja)
Other versions
JPH01285A (en
Inventor
Takao Kawaguchi
Yutaka Minamino
Noriko Ookawa
Yoshiya Takeda
Seiichi Nagata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP15587187A priority Critical patent/JPS64285A/en
Publication of JPH01285A publication Critical patent/JPH01285A/en
Publication of JPS64285A publication Critical patent/JPS64285A/en
Pending legal-status Critical Current

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  • ing And Chemical Polishing (AREA)

Abstract

PURPOSE: To perform dry etching free from resticking of a resist and formation of an organic polymerized film by using the gas of alcohol and carboxylic acids in case of etching a layer contg. In2O3 and lowly controlling pressure of gas at a time of non-discharge.
CONSTITUTION: In the case of etching a layer contg. In2O3 with reactive ionic etching, the gas of at least one kind of alcohol and carboxylic acids is used and then gas obtained by incorporating at least one kind of N2, Ar and He thereinto at a rate of 0W20% of total amount of the gasses is used. Furthermore the pressure of the gas used for etching is regulated to low pressure lower than 5Pa at a time of non-discharge. Thereby the flow rate of alcohol is made little and formation of an organic polymerized film is reduced and also vapor pressure of volatile ITO compd. is lowered and dry etching is easily performed.
COPYRIGHT: (C)1989,JPO&Japio
JP15587187A 1987-06-23 1987-06-23 Dry etching method Pending JPS64285A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15587187A JPS64285A (en) 1987-06-23 1987-06-23 Dry etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15587187A JPS64285A (en) 1987-06-23 1987-06-23 Dry etching method

Publications (2)

Publication Number Publication Date
JPH01285A JPH01285A (en) 1989-01-05
JPS64285A true JPS64285A (en) 1989-01-05

Family

ID=15615325

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15587187A Pending JPS64285A (en) 1987-06-23 1987-06-23 Dry etching method

Country Status (1)

Country Link
JP (1) JPS64285A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52119246A (en) * 1976-03-30 1977-10-06 Seiko Epson Corp Production of electrode substrate for display elements
JPS5647572A (en) * 1979-09-27 1981-04-30 Mitsubishi Electric Corp Etching method of indium oxide film

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52119246A (en) * 1976-03-30 1977-10-06 Seiko Epson Corp Production of electrode substrate for display elements
JPS5647572A (en) * 1979-09-27 1981-04-30 Mitsubishi Electric Corp Etching method of indium oxide film

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