JPS6427254A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS6427254A
JPS6427254A JP18389187A JP18389187A JPS6427254A JP S6427254 A JPS6427254 A JP S6427254A JP 18389187 A JP18389187 A JP 18389187A JP 18389187 A JP18389187 A JP 18389187A JP S6427254 A JPS6427254 A JP S6427254A
Authority
JP
Japan
Prior art keywords
buried
epitaxial layer
type epitaxial
layer
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18389187A
Other languages
Japanese (ja)
Inventor
Satoshi Shida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP18389187A priority Critical patent/JPS6427254A/en
Publication of JPS6427254A publication Critical patent/JPS6427254A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To thin an n-type epitaxial layer, and to increase the working speed of an n-p-n bipolar-transistor by independently forming a p<+> buried layer at a place deeper than the n-type epitaxial layer regardless of the film thickness of the n-type epitaxial layer shaping the bipolar-transistor. CONSTITUTION:A p<+> buried layer 5 is buried deeply to a p-type silicon substrate 1, and n<+> buried layers 3, 4 are buried onto a p-type epitaxial layer 10 formed onto the p-type silicon substrate 1. Consequently, the n<+> buried layers 3, 4 are formed where higher than the p-type silicon substrate 1 only by a section controlled by the thickness of the p-type epitaxial layer 10, and the p<+> buried layer 5 is shaped where lower than the n<+> buried layers 3, 4 only by the section relatively. That is, the relative positional relationship of the n<+> buried layers and p<+> buried layer is set arbitrarily by the film thickness of the p-type epitaxial layer 10 regardless of the film thickness of an n-type epitaxial layer 2. Accordingly, a semiconductor integrated circuit device having double well-Bi-CMOS structure capable of attaining the thinning of the epitaxial layer is acquired.
JP18389187A 1987-07-22 1987-07-22 Semiconductor integrated circuit device Pending JPS6427254A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18389187A JPS6427254A (en) 1987-07-22 1987-07-22 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18389187A JPS6427254A (en) 1987-07-22 1987-07-22 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS6427254A true JPS6427254A (en) 1989-01-30

Family

ID=16143621

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18389187A Pending JPS6427254A (en) 1987-07-22 1987-07-22 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS6427254A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5121185A (en) * 1987-10-09 1992-06-09 Hitachi, Ltd. Monolithic semiconductor IC device including blocks having different functions with different breakdown voltages
EP0746033A2 (en) * 1995-06-02 1996-12-04 Texas Instruments Incorporated Improvements in or relating to semiconductor processing

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5121185A (en) * 1987-10-09 1992-06-09 Hitachi, Ltd. Monolithic semiconductor IC device including blocks having different functions with different breakdown voltages
EP0746033A2 (en) * 1995-06-02 1996-12-04 Texas Instruments Incorporated Improvements in or relating to semiconductor processing
EP0746033A3 (en) * 1995-06-02 1999-06-02 Texas Instruments Incorporated Improvements in or relating to semiconductor processing

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