JPS64268A - Valve for vapor growth - Google Patents

Valve for vapor growth

Info

Publication number
JPS64268A
JPS64268A JP15613387A JP15613387A JPS64268A JP S64268 A JPS64268 A JP S64268A JP 15613387 A JP15613387 A JP 15613387A JP 15613387 A JP15613387 A JP 15613387A JP S64268 A JPS64268 A JP S64268A
Authority
JP
Japan
Prior art keywords
gas
raw gas
inlet
cylinders
line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15613387A
Other languages
Japanese (ja)
Other versions
JPH01268A (en
JPH0471993B2 (en
Inventor
Minoru Aragaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Priority to JP62-156133A priority Critical patent/JPH01268A/en
Priority claimed from JP62-156133A external-priority patent/JPH01268A/en
Publication of JPS64268A publication Critical patent/JPS64268A/en
Publication of JPH01268A publication Critical patent/JPH01268A/en
Publication of JPH0471993B2 publication Critical patent/JPH0471993B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE: To grow a high-quality semiconductor layer with good reproducibility and to sharply change the composition by annularly arranging a gas passage, introducing a raw gas a purge gas from the respective inlets, and switching the gas passages by a switching means.
CONSTITUTION: Cylinders 4a and 4b are arranged in the respective passages of the annularly arranged passage, and driven by respective driving sources 7a and 7b. When a raw gas is supplied, the driving sources 7a and 7b are operated to move the cylinders 4a and 4b to the positions as shown in the figure, and the raw gas introduced from a raw gas inlet 1 flows into a reaction furnace through a supply line 2. At this time, a carrier gas for purging is introduced at the same flow rate as that of the raw gas from an inlet 8, and discharged through a exhaust line 3. When the raw gas is subsequently discharged, the cylinders 4a and 4b are respectively moved to the upper end and the lower end, and the raw gas introduced from the inlet 1 is discharged from the line 3. At this time, the carrier gas is introduced from the inlet 8 at the same flow rate as that of the raw gas, and flows into the reaction furnace from the line 2.
COPYRIGHT: (C)1989,JPO&Japio
JP62-156133A 1987-06-23 Vapor phase growth valve Granted JPH01268A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62-156133A JPH01268A (en) 1987-06-23 Vapor phase growth valve

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62-156133A JPH01268A (en) 1987-06-23 Vapor phase growth valve

Publications (3)

Publication Number Publication Date
JPS64268A true JPS64268A (en) 1989-01-05
JPH01268A JPH01268A (en) 1989-01-05
JPH0471993B2 JPH0471993B2 (en) 1992-11-17

Family

ID=

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005051205A (en) * 2003-06-11 2005-02-24 Asm Internatl Nv Gas supply system, valve assembly and method for forming reactant pulse by operating valve assembly

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005051205A (en) * 2003-06-11 2005-02-24 Asm Internatl Nv Gas supply system, valve assembly and method for forming reactant pulse by operating valve assembly

Also Published As

Publication number Publication date
JPH0471993B2 (en) 1992-11-17

Similar Documents

Publication Publication Date Title
SU720996A3 (en) Device for continuous sedimentation of layers from gaseous phase
JPS6427616A (en) Valve block and vessel dispensing and/or semiconductor source reactant
JPH0429313A (en) Device for producing semiconductor crystal
ES478972A1 (en) Reactor for the continuous thermal treatment of solids, particularly carbonaceous adsorbents and process of operating the same
JPS64268A (en) Valve for vapor growth
JPS5694751A (en) Vapor growth method
EP0905287A3 (en) Method and apparatus for fabricating compound semiconductor epitaxial wafer by vapour phase growth
JPS6447018A (en) Vapor growth device
JPS6483661A (en) Vapor growth device by method for thermally decomposing organic metal
JPS643003A (en) Process for producing high-purity nitrogen by pressure-swing adsorption and apparatus therefor
JPS58223695A (en) Device for vapor-phase epitaxial growth
JPS5773305A (en) Fineluy powdered fuel burner
JPS6411319A (en) Semiconductor vapor growth device
JPH09292041A (en) Raw material gas feed control valve device
JPS5518024A (en) Vapor phase reactor
KR950008842B1 (en) Apparatus for producing semiconductors
JPS6449218A (en) Manufacture of semiconductor
JPS5484900A (en) Vapor phase growth method of magnesia spinel
JPS55104542A (en) Excess-air-ratio controlling system for engine using alcohol-modified gas as fuel
JPS5583228A (en) Gas phase growing of 3, 5 group compound mixed crystal semiconductor
JPS5727020A (en) Vapor phase crystal growth device
JPS6446917A (en) Chemical vapor growth device
JPS56100115A (en) Manufacture of silicon nitride whisker
JPS56112721A (en) Vapor phase epitaxial growing apparatus
KR950008843B1 (en) Apparatus for producing semiconductors

Legal Events

Date Code Title Description
S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313532

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

EXPY Cancellation because of completion of term
FPAY Renewal fee payment (prs date is renewal date of database)

Year of fee payment: 15

Free format text: PAYMENT UNTIL: 20071117