JPS64268A - Valve for vapor growth - Google Patents
Valve for vapor growthInfo
- Publication number
- JPS64268A JPS64268A JP15613387A JP15613387A JPS64268A JP S64268 A JPS64268 A JP S64268A JP 15613387 A JP15613387 A JP 15613387A JP 15613387 A JP15613387 A JP 15613387A JP S64268 A JPS64268 A JP S64268A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- raw gas
- inlet
- cylinders
- line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
PURPOSE: To grow a high-quality semiconductor layer with good reproducibility and to sharply change the composition by annularly arranging a gas passage, introducing a raw gas a purge gas from the respective inlets, and switching the gas passages by a switching means.
CONSTITUTION: Cylinders 4a and 4b are arranged in the respective passages of the annularly arranged passage, and driven by respective driving sources 7a and 7b. When a raw gas is supplied, the driving sources 7a and 7b are operated to move the cylinders 4a and 4b to the positions as shown in the figure, and the raw gas introduced from a raw gas inlet 1 flows into a reaction furnace through a supply line 2. At this time, a carrier gas for purging is introduced at the same flow rate as that of the raw gas from an inlet 8, and discharged through a exhaust line 3. When the raw gas is subsequently discharged, the cylinders 4a and 4b are respectively moved to the upper end and the lower end, and the raw gas introduced from the inlet 1 is discharged from the line 3. At this time, the carrier gas is introduced from the inlet 8 at the same flow rate as that of the raw gas, and flows into the reaction furnace from the line 2.
COPYRIGHT: (C)1989,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62-156133A JPH01268A (en) | 1987-06-23 | Vapor phase growth valve |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62-156133A JPH01268A (en) | 1987-06-23 | Vapor phase growth valve |
Publications (3)
Publication Number | Publication Date |
---|---|
JPS64268A true JPS64268A (en) | 1989-01-05 |
JPH01268A JPH01268A (en) | 1989-01-05 |
JPH0471993B2 JPH0471993B2 (en) | 1992-11-17 |
Family
ID=
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005051205A (en) * | 2003-06-11 | 2005-02-24 | Asm Internatl Nv | Gas supply system, valve assembly and method for forming reactant pulse by operating valve assembly |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005051205A (en) * | 2003-06-11 | 2005-02-24 | Asm Internatl Nv | Gas supply system, valve assembly and method for forming reactant pulse by operating valve assembly |
Also Published As
Publication number | Publication date |
---|---|
JPH0471993B2 (en) | 1992-11-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SU720996A3 (en) | Device for continuous sedimentation of layers from gaseous phase | |
JPS6427616A (en) | Valve block and vessel dispensing and/or semiconductor source reactant | |
JPH0429313A (en) | Device for producing semiconductor crystal | |
ES478972A1 (en) | Reactor for the continuous thermal treatment of solids, particularly carbonaceous adsorbents and process of operating the same | |
JPS64268A (en) | Valve for vapor growth | |
JPS5694751A (en) | Vapor growth method | |
EP0905287A3 (en) | Method and apparatus for fabricating compound semiconductor epitaxial wafer by vapour phase growth | |
JPS6447018A (en) | Vapor growth device | |
JPS6483661A (en) | Vapor growth device by method for thermally decomposing organic metal | |
JPS643003A (en) | Process for producing high-purity nitrogen by pressure-swing adsorption and apparatus therefor | |
JPS58223695A (en) | Device for vapor-phase epitaxial growth | |
JPS5773305A (en) | Fineluy powdered fuel burner | |
JPS6411319A (en) | Semiconductor vapor growth device | |
JPH09292041A (en) | Raw material gas feed control valve device | |
JPS5518024A (en) | Vapor phase reactor | |
KR950008842B1 (en) | Apparatus for producing semiconductors | |
JPS6449218A (en) | Manufacture of semiconductor | |
JPS5484900A (en) | Vapor phase growth method of magnesia spinel | |
JPS55104542A (en) | Excess-air-ratio controlling system for engine using alcohol-modified gas as fuel | |
JPS5583228A (en) | Gas phase growing of 3, 5 group compound mixed crystal semiconductor | |
JPS5727020A (en) | Vapor phase crystal growth device | |
JPS6446917A (en) | Chemical vapor growth device | |
JPS56100115A (en) | Manufacture of silicon nitride whisker | |
JPS56112721A (en) | Vapor phase epitaxial growing apparatus | |
KR950008843B1 (en) | Apparatus for producing semiconductors |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313532 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
EXPY | Cancellation because of completion of term | ||
FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 15 Free format text: PAYMENT UNTIL: 20071117 |