JPS6426363U - - Google Patents
Info
- Publication number
- JPS6426363U JPS6426363U JP11971287U JP11971287U JPS6426363U JP S6426363 U JPS6426363 U JP S6426363U JP 11971287 U JP11971287 U JP 11971287U JP 11971287 U JP11971287 U JP 11971287U JP S6426363 U JPS6426363 U JP S6426363U
- Authority
- JP
- Japan
- Prior art keywords
- flow rate
- gas
- reactive
- gas flow
- inert gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005546 reactive sputtering Methods 0.000 claims description 5
- 238000001514 detection method Methods 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims 9
- 239000011261 inert gas Substances 0.000 claims 5
- 238000004544 sputter deposition Methods 0.000 claims 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Description
第1図は本考案の一実施例を示す反応性スパツ
タ装置の構成説明図、第2図は従来の反応性スパ
ツタ装置の構成説明図である。
1……真空槽、2……排気口、3……排気速度
調整用バルブ、4……巻き出しロール、5……プ
ラスチツクフイルム、6……メインロール、7…
…ターゲツト、8……圧力検出装置、9……巻き
取りロール、10,11……ガス導入バルブ、1
2,13……ガスボンベ、14,15……ガス流
量制御装置、16……電子式処理装置。
FIG. 1 is an explanatory diagram of the configuration of a reactive sputtering apparatus showing an embodiment of the present invention, and FIG. 2 is an explanatory diagram of the configuration of a conventional reactive sputtering apparatus. 1... Vacuum chamber, 2... Exhaust port, 3... Exhaust speed adjustment valve, 4... Unwinding roll, 5... Plastic film, 6... Main roll, 7...
...Target, 8...Pressure detection device, 9...Take-up roll, 10, 11...Gas introduction valve, 1
2, 13... Gas cylinder, 14, 15... Gas flow rate control device, 16... Electronic processing device.
Claims (1)
反応性スパツタリングを行うスパツタ装置におい
て、前記スパツタ装置は反応性ガス流量と不活性
ガス流量をそれぞれ自動制御するガス流量制御装
置と、反応性ガスと不活性ガスとを導入するガス
導入バルブと、真空槽内の圧力を検出する圧力検
出装置と、前記圧力検出装置の検出値に基づいて
反応性ガスと不活性ガスの導入量の比が常に一定
となるようにガス流量制御装置とガス導入バルブ
に信号を出力する電子式処理装置とを具備したこ
とを特徴とする反応性スパツタ装置。 In a sputtering device that performs reactive sputtering by introducing a reactive gas and an inert gas into a vacuum chamber, the sputtering device includes a gas flow rate control device that automatically controls the reactive gas flow rate and the inert gas flow rate, respectively, and a reactive sputtering device that automatically controls the reactive gas flow rate and the inert gas flow rate. A gas introduction valve that introduces the gas and the inert gas, a pressure detection device that detects the pressure in the vacuum chamber, and a ratio of the introduced amount of the reactive gas and the inert gas based on the detected value of the pressure detection device. A reactive sputtering device characterized by comprising a gas flow rate control device and an electronic processing device that outputs a signal to a gas introduction valve so that the flow rate is always constant.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11971287U JPS6426363U (en) | 1987-08-04 | 1987-08-04 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11971287U JPS6426363U (en) | 1987-08-04 | 1987-08-04 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6426363U true JPS6426363U (en) | 1989-02-14 |
Family
ID=31365181
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11971287U Pending JPS6426363U (en) | 1987-08-04 | 1987-08-04 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6426363U (en) |
-
1987
- 1987-08-04 JP JP11971287U patent/JPS6426363U/ja active Pending
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