JPS642380A - Manufacture of thermoelectric element - Google Patents
Manufacture of thermoelectric elementInfo
- Publication number
- JPS642380A JPS642380A JP62156646A JP15664687A JPS642380A JP S642380 A JPS642380 A JP S642380A JP 62156646 A JP62156646 A JP 62156646A JP 15664687 A JP15664687 A JP 15664687A JP S642380 A JPS642380 A JP S642380A
- Authority
- JP
- Japan
- Prior art keywords
- additive
- mixture
- adamantane
- powder
- thermoelectric element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Powder Metallurgy (AREA)
Abstract
PURPOSE: To obtain a thermoelectric element having high thermo-electromotive force and uniform characteristics by adding adamantane or an adamantane/ trimethylene norbornane mixture to the powder of a metallic alloy and press- molding, sintering and thermally treating these mixture.
CONSTITUTION: A specified metallic alloy such as Bi2Te3, Sb2Te3, etc., is crushed mechanically or atomized through a high-frequency plasma method, thus manufacturing powder. It is advantageous that fine particles of 500nm or less are synthesized in vapor phase through a plasma method. An adamantane/ trimethylene norbornane mixture is added and mixed to powder. The additive excellently slips off on baking, and the residue of the additive after baking is reduced and the additive is effective for manufacturing a superior porous baked body. These mixture is molded at 0.5∼2ton/cm2, and baked at 1000∼1200°C, thus sublimating the additive. A fine-particle molded form through the plasma method is sintered for four to eight hr in 10-2Torr. Lastly, the sintered body is treated for several hr at 700∼900°C, thus completing the manufacture of a thermoelectric element.
COPYRIGHT: (C)1989,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62-156646A JPH012380A (en) | 1987-06-25 | Method for manufacturing thermoelectric elements |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62-156646A JPH012380A (en) | 1987-06-25 | Method for manufacturing thermoelectric elements |
Publications (3)
Publication Number | Publication Date |
---|---|
JPS642380A true JPS642380A (en) | 1989-01-06 |
JPH012380A JPH012380A (en) | 1989-01-06 |
JPH0347751B2 JPH0347751B2 (en) | 1991-07-22 |
Family
ID=
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0455051A2 (en) * | 1990-04-20 | 1991-11-06 | Matsushita Electric Industrial Co., Ltd. | Thermoelectric semiconductor having a porous structure deaerated into a vacuum and thermoelectric panel |
JPWO2005091393A1 (en) * | 2004-03-22 | 2008-05-22 | 独立行政法人科学技術振興機構 | Porous thermoelectric material and manufacturing method thereof |
JP2009021187A (en) * | 2007-07-13 | 2009-01-29 | Furukawa Electric Co Ltd:The | Female terminal |
WO2011047405A3 (en) * | 2009-10-23 | 2011-08-11 | Miba Sinter Austria Gmbh | Method for producing a thermoelectric element |
JP2015053466A (en) * | 2013-08-07 | 2015-03-19 | 株式会社Nttファシリティーズ | Thermoelectric material, process of manufacturing the same, and thermoelectric conversion device |
CN106956004A (en) * | 2017-02-23 | 2017-07-18 | 厦门理工学院 | High stability Zn4Sb3Thermoelectric composite material and preparation method thereof |
CN107507909A (en) * | 2017-08-08 | 2017-12-22 | 武汉科技大学 | A kind of porous p-type Bi2Te3Base thermoelectricity material and preparation method thereof |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0455051A2 (en) * | 1990-04-20 | 1991-11-06 | Matsushita Electric Industrial Co., Ltd. | Thermoelectric semiconductor having a porous structure deaerated into a vacuum and thermoelectric panel |
US5168339A (en) * | 1990-04-20 | 1992-12-01 | Matsushita Electrical Industrial Co., Ltd. | Thermoelectric semiconductor having a porous structure deaerated in a vacuum and thermoelectric panel using p-type and n-type thermoelectric semiconductors |
USRE35441E (en) * | 1990-04-20 | 1997-02-04 | Matsushita Electrical Industrial Co., Ltd. | Thermoelectric semiconductor having a porous structure deaerated in a vacuum and thermoelectric panel using p-type and n-type thermoelectric semiconductors |
EP0834930A2 (en) * | 1990-04-20 | 1998-04-08 | Matsushita Electric Industrial Co., Ltd. | Thermoelectric semiconductor having a porous structure deaerated into a vacuum and thermoelectric panel using p-type and n-type thermoelectric semiconductors |
EP0834930A3 (en) * | 1990-04-20 | 1998-04-29 | Matsushita Electric Industrial Co., Ltd. | Thermoelectric semiconductor having a porous structure deaerated into a vacuum and thermoelectric panel using p-type and n-type thermoelectric semiconductors |
JPWO2005091393A1 (en) * | 2004-03-22 | 2008-05-22 | 独立行政法人科学技術振興機構 | Porous thermoelectric material and manufacturing method thereof |
JP2009021187A (en) * | 2007-07-13 | 2009-01-29 | Furukawa Electric Co Ltd:The | Female terminal |
WO2011047405A3 (en) * | 2009-10-23 | 2011-08-11 | Miba Sinter Austria Gmbh | Method for producing a thermoelectric element |
JP2015053466A (en) * | 2013-08-07 | 2015-03-19 | 株式会社Nttファシリティーズ | Thermoelectric material, process of manufacturing the same, and thermoelectric conversion device |
CN106956004A (en) * | 2017-02-23 | 2017-07-18 | 厦门理工学院 | High stability Zn4Sb3Thermoelectric composite material and preparation method thereof |
CN106956004B (en) * | 2017-02-23 | 2018-12-28 | 厦门理工学院 | High stability Zn4Sb3Thermoelectric composite material and preparation method thereof |
CN107507909A (en) * | 2017-08-08 | 2017-12-22 | 武汉科技大学 | A kind of porous p-type Bi2Te3Base thermoelectricity material and preparation method thereof |
CN107507909B (en) * | 2017-08-08 | 2020-02-14 | 武汉科技大学 | Porous P-type Bi2Te3Base thermoelectric material and preparation method thereof |
Also Published As
Publication number | Publication date |
---|---|
JPH0347751B2 (en) | 1991-07-22 |
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