JPS6420616A - Formation of p-type sic electrode - Google Patents
Formation of p-type sic electrodeInfo
- Publication number
- JPS6420616A JPS6420616A JP17685987A JP17685987A JPS6420616A JP S6420616 A JPS6420616 A JP S6420616A JP 17685987 A JP17685987 A JP 17685987A JP 17685987 A JP17685987 A JP 17685987A JP S6420616 A JPS6420616 A JP S6420616A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type sic
- electrode
- carrier concentration
- heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17685987A JPS6420616A (en) | 1987-07-15 | 1987-07-15 | Formation of p-type sic electrode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17685987A JPS6420616A (en) | 1987-07-15 | 1987-07-15 | Formation of p-type sic electrode |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6420616A true JPS6420616A (en) | 1989-01-24 |
Family
ID=16021069
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17685987A Pending JPS6420616A (en) | 1987-07-15 | 1987-07-15 | Formation of p-type sic electrode |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6420616A (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003209067A (ja) * | 2001-12-20 | 2003-07-25 | Fairchild Semiconductor Corp | 半導体デバイス及び半導体デバイスの電気接続を形成する方法 |
JP2004119821A (ja) * | 2002-09-27 | 2004-04-15 | Fujitsu Ltd | オーミック電極の形成方法 |
WO2010086718A1 (en) | 2009-01-30 | 2010-08-05 | Toyota Jidosha Kabushiki Kaisha | Ohmic electrode and method of forming the same |
WO2011015942A2 (en) | 2009-08-05 | 2011-02-10 | Toyota Jidosha Kabushiki Kaisha | Ohmic electrode and method of forming the same |
US11271118B2 (en) | 2019-09-06 | 2022-03-08 | Fuji Electric Co., Ltd. | Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device |
US11411093B2 (en) | 2020-01-22 | 2022-08-09 | Fuji Electric Co., Ltd. | Method of manufacturing silicon carbide semiconductor device |
-
1987
- 1987-07-15 JP JP17685987A patent/JPS6420616A/ja active Pending
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003209067A (ja) * | 2001-12-20 | 2003-07-25 | Fairchild Semiconductor Corp | 半導体デバイス及び半導体デバイスの電気接続を形成する方法 |
US6955978B1 (en) * | 2001-12-20 | 2005-10-18 | Fairchild Semiconductor Corporation | Uniform contact |
JP2004119821A (ja) * | 2002-09-27 | 2004-04-15 | Fujitsu Ltd | オーミック電極の形成方法 |
WO2010086718A1 (en) | 2009-01-30 | 2010-08-05 | Toyota Jidosha Kabushiki Kaisha | Ohmic electrode and method of forming the same |
DE112010000709T5 (de) | 2009-01-30 | 2012-11-08 | Toyota Jidosha Kabushiki Kaisha | Ohmsche Elektrode und Verfahren zur Bildung derselben |
WO2011015942A2 (en) | 2009-08-05 | 2011-02-10 | Toyota Jidosha Kabushiki Kaisha | Ohmic electrode and method of forming the same |
DE112010003202T5 (de) | 2009-08-05 | 2012-06-28 | Toyota Jidosha K.K. | Ohmsche Elektrode und Verfahren, diese zu bilden |
US8716121B2 (en) | 2009-08-05 | 2014-05-06 | Toyota Jidosha Kabushiki Kaisha | Ohmic electrode and method of forming the same |
US11271118B2 (en) | 2019-09-06 | 2022-03-08 | Fuji Electric Co., Ltd. | Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device |
US11411093B2 (en) | 2020-01-22 | 2022-08-09 | Fuji Electric Co., Ltd. | Method of manufacturing silicon carbide semiconductor device |
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