JPS6420616A - Formation of p-type sic electrode - Google Patents

Formation of p-type sic electrode

Info

Publication number
JPS6420616A
JPS6420616A JP17685987A JP17685987A JPS6420616A JP S6420616 A JPS6420616 A JP S6420616A JP 17685987 A JP17685987 A JP 17685987A JP 17685987 A JP17685987 A JP 17685987A JP S6420616 A JPS6420616 A JP S6420616A
Authority
JP
Japan
Prior art keywords
layer
type sic
electrode
carrier concentration
heat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17685987A
Other languages
English (en)
Inventor
Junichi Sano
Takahiro Kamiya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP17685987A priority Critical patent/JPS6420616A/ja
Publication of JPS6420616A publication Critical patent/JPS6420616A/ja
Pending legal-status Critical Current

Links

JP17685987A 1987-07-15 1987-07-15 Formation of p-type sic electrode Pending JPS6420616A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17685987A JPS6420616A (en) 1987-07-15 1987-07-15 Formation of p-type sic electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17685987A JPS6420616A (en) 1987-07-15 1987-07-15 Formation of p-type sic electrode

Publications (1)

Publication Number Publication Date
JPS6420616A true JPS6420616A (en) 1989-01-24

Family

ID=16021069

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17685987A Pending JPS6420616A (en) 1987-07-15 1987-07-15 Formation of p-type sic electrode

Country Status (1)

Country Link
JP (1) JPS6420616A (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003209067A (ja) * 2001-12-20 2003-07-25 Fairchild Semiconductor Corp 半導体デバイス及び半導体デバイスの電気接続を形成する方法
JP2004119821A (ja) * 2002-09-27 2004-04-15 Fujitsu Ltd オーミック電極の形成方法
WO2010086718A1 (en) 2009-01-30 2010-08-05 Toyota Jidosha Kabushiki Kaisha Ohmic electrode and method of forming the same
WO2011015942A2 (en) 2009-08-05 2011-02-10 Toyota Jidosha Kabushiki Kaisha Ohmic electrode and method of forming the same
US11271118B2 (en) 2019-09-06 2022-03-08 Fuji Electric Co., Ltd. Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
US11411093B2 (en) 2020-01-22 2022-08-09 Fuji Electric Co., Ltd. Method of manufacturing silicon carbide semiconductor device

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003209067A (ja) * 2001-12-20 2003-07-25 Fairchild Semiconductor Corp 半導体デバイス及び半導体デバイスの電気接続を形成する方法
US6955978B1 (en) * 2001-12-20 2005-10-18 Fairchild Semiconductor Corporation Uniform contact
JP2004119821A (ja) * 2002-09-27 2004-04-15 Fujitsu Ltd オーミック電極の形成方法
WO2010086718A1 (en) 2009-01-30 2010-08-05 Toyota Jidosha Kabushiki Kaisha Ohmic electrode and method of forming the same
DE112010000709T5 (de) 2009-01-30 2012-11-08 Toyota Jidosha Kabushiki Kaisha Ohmsche Elektrode und Verfahren zur Bildung derselben
WO2011015942A2 (en) 2009-08-05 2011-02-10 Toyota Jidosha Kabushiki Kaisha Ohmic electrode and method of forming the same
DE112010003202T5 (de) 2009-08-05 2012-06-28 Toyota Jidosha K.K. Ohmsche Elektrode und Verfahren, diese zu bilden
US8716121B2 (en) 2009-08-05 2014-05-06 Toyota Jidosha Kabushiki Kaisha Ohmic electrode and method of forming the same
US11271118B2 (en) 2019-09-06 2022-03-08 Fuji Electric Co., Ltd. Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
US11411093B2 (en) 2020-01-22 2022-08-09 Fuji Electric Co., Ltd. Method of manufacturing silicon carbide semiconductor device

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