JPS641926B2 - - Google Patents
Info
- Publication number
- JPS641926B2 JPS641926B2 JP6658479A JP6658479A JPS641926B2 JP S641926 B2 JPS641926 B2 JP S641926B2 JP 6658479 A JP6658479 A JP 6658479A JP 6658479 A JP6658479 A JP 6658479A JP S641926 B2 JPS641926 B2 JP S641926B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- transfer pattern
- single crystal
- ray exposure
- crystal substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 29
- 230000003014 reinforcing effect Effects 0.000 claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- 150000001875 compounds Chemical class 0.000 claims 1
- 239000002861 polymer material Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 74
- 229910004298 SiO 2 Inorganic materials 0.000 description 24
- 238000000034 method Methods 0.000 description 18
- 239000002131 composite material Substances 0.000 description 9
- 238000005530 etching Methods 0.000 description 8
- 230000001681 protective effect Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 229910001385 heavy metal Inorganic materials 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 230000002787 reinforcement Effects 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6658479A JPS55157739A (en) | 1979-05-29 | 1979-05-29 | X-ray exposure mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6658479A JPS55157739A (en) | 1979-05-29 | 1979-05-29 | X-ray exposure mask |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55157739A JPS55157739A (en) | 1980-12-08 |
| JPS641926B2 true JPS641926B2 (ko) | 1989-01-13 |
Family
ID=13320139
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6658479A Granted JPS55157739A (en) | 1979-05-29 | 1979-05-29 | X-ray exposure mask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55157739A (ko) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3339624A1 (de) * | 1983-11-02 | 1985-05-09 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Verfahren zur herstellung einer maske fuer die mustererzeugung in lackschichten mittels roentgenstrahllithographie |
| JPS6249623A (ja) * | 1985-07-19 | 1987-03-04 | Nec Corp | Ｘ線露光マスク |
| DE3729432A1 (de) * | 1987-09-03 | 1989-03-16 | Philips Patentverwaltung | Verfahren zur herstellung einer maske fuer strahlungslithographie |
| US9152036B2 (en) | 2013-09-23 | 2015-10-06 | National Synchrotron Radiation Research Center | X-ray mask structure and method for preparing the same |
-
1979
- 1979-05-29 JP JP6658479A patent/JPS55157739A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55157739A (en) | 1980-12-08 |
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