JPS641926B2 - - Google Patents

Info

Publication number
JPS641926B2
JPS641926B2 JP6658479A JP6658479A JPS641926B2 JP S641926 B2 JPS641926 B2 JP S641926B2 JP 6658479 A JP6658479 A JP 6658479A JP 6658479 A JP6658479 A JP 6658479A JP S641926 B2 JPS641926 B2 JP S641926B2
Authority
JP
Japan
Prior art keywords
film
transfer pattern
single crystal
ray exposure
crystal substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP6658479A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55157739A (en
Inventor
Katsumi Suzuki
Junji Matsui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP6658479A priority Critical patent/JPS55157739A/ja
Publication of JPS55157739A publication Critical patent/JPS55157739A/ja
Publication of JPS641926B2 publication Critical patent/JPS641926B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP6658479A 1979-05-29 1979-05-29 X-ray exposure mask Granted JPS55157739A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6658479A JPS55157739A (en) 1979-05-29 1979-05-29 X-ray exposure mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6658479A JPS55157739A (en) 1979-05-29 1979-05-29 X-ray exposure mask

Publications (2)

Publication Number Publication Date
JPS55157739A JPS55157739A (en) 1980-12-08
JPS641926B2 true JPS641926B2 (Sortimente) 1989-01-13

Family

ID=13320139

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6658479A Granted JPS55157739A (en) 1979-05-29 1979-05-29 X-ray exposure mask

Country Status (1)

Country Link
JP (1) JPS55157739A (Sortimente)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3339624A1 (de) * 1983-11-02 1985-05-09 Philips Patentverwaltung Gmbh, 2000 Hamburg Verfahren zur herstellung einer maske fuer die mustererzeugung in lackschichten mittels roentgenstrahllithographie
JPS6249623A (ja) * 1985-07-19 1987-03-04 Nec Corp Ｘ線露光マスク
DE3729432A1 (de) * 1987-09-03 1989-03-16 Philips Patentverwaltung Verfahren zur herstellung einer maske fuer strahlungslithographie
US9152036B2 (en) * 2013-09-23 2015-10-06 National Synchrotron Radiation Research Center X-ray mask structure and method for preparing the same

Also Published As

Publication number Publication date
JPS55157739A (en) 1980-12-08

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