JPS6417466A - Power control transistor - Google Patents

Power control transistor

Info

Publication number
JPS6417466A
JPS6417466A JP17358587A JP17358587A JPS6417466A JP S6417466 A JPS6417466 A JP S6417466A JP 17358587 A JP17358587 A JP 17358587A JP 17358587 A JP17358587 A JP 17358587A JP S6417466 A JPS6417466 A JP S6417466A
Authority
JP
Japan
Prior art keywords
transistor
control
electrode
input
power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17358587A
Other languages
Japanese (ja)
Inventor
Masaharu Koyama
Akihisa Taniguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP17358587A priority Critical patent/JPS6417466A/en
Publication of JPS6417466A publication Critical patent/JPS6417466A/en
Pending legal-status Critical Current

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  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To perform a high frequency power control using a small DC control power by connecting an element able to control a current using a voltage to the base of a transistor formed in a semiconductor, and providing, in addition to a grounding electrode, an input electrode and an output electrode of its base, a control electrode. CONSTITUTION:An input matching circuit is provided at the input terminal 18 of a power control transistor 22, and input power is transmitted without loss. If a voltage to be applied to a gate electrode 21 or 15 is zero, an input power applied to the terminal 18 is applied through a channel 13 provided in advance at a control element section 17 to the base region 10 of a transistor section 16 almost without loss, and the transistor 22 operates similarly to a normal amplifying transistor. Then, when a negative voltage is applied to the gate electrode 21 or 15, the section 17 becomes a high resistance to reduce a high frequency power to be applied to the base region 10 of the transistor 15 of an amplifying element, thereby controlling an amplifying gain as a whole.
JP17358587A 1987-07-10 1987-07-10 Power control transistor Pending JPS6417466A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17358587A JPS6417466A (en) 1987-07-10 1987-07-10 Power control transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17358587A JPS6417466A (en) 1987-07-10 1987-07-10 Power control transistor

Publications (1)

Publication Number Publication Date
JPS6417466A true JPS6417466A (en) 1989-01-20

Family

ID=15963306

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17358587A Pending JPS6417466A (en) 1987-07-10 1987-07-10 Power control transistor

Country Status (1)

Country Link
JP (1) JPS6417466A (en)

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