JPS6413791A - Thin-film device and manufacture thereof - Google Patents

Thin-film device and manufacture thereof

Info

Publication number
JPS6413791A
JPS6413791A JP16860187A JP16860187A JPS6413791A JP S6413791 A JPS6413791 A JP S6413791A JP 16860187 A JP16860187 A JP 16860187A JP 16860187 A JP16860187 A JP 16860187A JP S6413791 A JPS6413791 A JP S6413791A
Authority
JP
Japan
Prior art keywords
film
conductive thin
foundation
main surface
dielectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16860187A
Other languages
Japanese (ja)
Other versions
JPH0570314B2 (en
Inventor
Koichi Inoue
Yasutoshi Kurihara
Nobusuke Okada
Komei Yatsuno
Tsuneo Endo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP16860187A priority Critical patent/JPS6413791A/en
Publication of JPS6413791A publication Critical patent/JPS6413791A/en
Publication of JPH0570314B2 publication Critical patent/JPH0570314B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE:To prevent the surface contamination of a foundation film in a first conduc tive thin-film without increasing mandays while obviating the generation of film discon nection by forming one main surface of a dielectric substrate just under the first conductive thin-film or the surface of the dielectric foundation film shaped onto one main surface of the substrate in height higher than one main surface of the peripheral dielectric substrate or the surface of the dielectric foundation film 'h'. CONSTITUTION:A stepped section h forcibly shaped to the foundation of a second conductive thin-film 11 consisting of a first conductive thin-film 10 and a dielectric base 12 is transferred accurately onto the surface of the second conductive thin film 11 at the intial stage of the deposition of the second conductive thin-film 31. The shapes of the rising and falling sections of the step change with the increase of the film thickness of the second conductive thin-film 11, but the absolute value of the stepped section does not alter and is maintained. The shapes of the rising and falling sections of the step have no effect on the recognition of a pattern. The thickness of the first conductive thin-film is made smaller than 0.05mum and the total of the difference of height with the surface of a foundation film formed onto a main surface and the thickness of the first conductive thin-film is brought to 0.05mum or more to one main surface of a substrate under or in the periphery of the first conductive thin-film.
JP16860187A 1987-07-08 1987-07-08 Thin-film device and manufacture thereof Granted JPS6413791A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16860187A JPS6413791A (en) 1987-07-08 1987-07-08 Thin-film device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16860187A JPS6413791A (en) 1987-07-08 1987-07-08 Thin-film device and manufacture thereof

Publications (2)

Publication Number Publication Date
JPS6413791A true JPS6413791A (en) 1989-01-18
JPH0570314B2 JPH0570314B2 (en) 1993-10-04

Family

ID=15871080

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16860187A Granted JPS6413791A (en) 1987-07-08 1987-07-08 Thin-film device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS6413791A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5470767A (en) * 1977-11-16 1979-06-06 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS5664885A (en) * 1979-11-02 1981-06-02 Toshiba Corp Thermosensitive head

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5470767A (en) * 1977-11-16 1979-06-06 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS5664885A (en) * 1979-11-02 1981-06-02 Toshiba Corp Thermosensitive head

Also Published As

Publication number Publication date
JPH0570314B2 (en) 1993-10-04

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