JPS6413791A - Thin-film device and manufacture thereof - Google Patents
Thin-film device and manufacture thereofInfo
- Publication number
- JPS6413791A JPS6413791A JP16860187A JP16860187A JPS6413791A JP S6413791 A JPS6413791 A JP S6413791A JP 16860187 A JP16860187 A JP 16860187A JP 16860187 A JP16860187 A JP 16860187A JP S6413791 A JPS6413791 A JP S6413791A
- Authority
- JP
- Japan
- Prior art keywords
- film
- conductive thin
- foundation
- main surface
- dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE:To prevent the surface contamination of a foundation film in a first conduc tive thin-film without increasing mandays while obviating the generation of film discon nection by forming one main surface of a dielectric substrate just under the first conductive thin-film or the surface of the dielectric foundation film shaped onto one main surface of the substrate in height higher than one main surface of the peripheral dielectric substrate or the surface of the dielectric foundation film 'h'. CONSTITUTION:A stepped section h forcibly shaped to the foundation of a second conductive thin-film 11 consisting of a first conductive thin-film 10 and a dielectric base 12 is transferred accurately onto the surface of the second conductive thin film 11 at the intial stage of the deposition of the second conductive thin-film 31. The shapes of the rising and falling sections of the step change with the increase of the film thickness of the second conductive thin-film 11, but the absolute value of the stepped section does not alter and is maintained. The shapes of the rising and falling sections of the step have no effect on the recognition of a pattern. The thickness of the first conductive thin-film is made smaller than 0.05mum and the total of the difference of height with the surface of a foundation film formed onto a main surface and the thickness of the first conductive thin-film is brought to 0.05mum or more to one main surface of a substrate under or in the periphery of the first conductive thin-film.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16860187A JPS6413791A (en) | 1987-07-08 | 1987-07-08 | Thin-film device and manufacture thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16860187A JPS6413791A (en) | 1987-07-08 | 1987-07-08 | Thin-film device and manufacture thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6413791A true JPS6413791A (en) | 1989-01-18 |
JPH0570314B2 JPH0570314B2 (en) | 1993-10-04 |
Family
ID=15871080
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16860187A Granted JPS6413791A (en) | 1987-07-08 | 1987-07-08 | Thin-film device and manufacture thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6413791A (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5470767A (en) * | 1977-11-16 | 1979-06-06 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
JPS5664885A (en) * | 1979-11-02 | 1981-06-02 | Toshiba Corp | Thermosensitive head |
-
1987
- 1987-07-08 JP JP16860187A patent/JPS6413791A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5470767A (en) * | 1977-11-16 | 1979-06-06 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
JPS5664885A (en) * | 1979-11-02 | 1981-06-02 | Toshiba Corp | Thermosensitive head |
Also Published As
Publication number | Publication date |
---|---|
JPH0570314B2 (en) | 1993-10-04 |
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