JPS6413756A - Semiconductor device and manufacture thereof - Google Patents
Semiconductor device and manufacture thereofInfo
- Publication number
- JPS6413756A JPS6413756A JP62170203A JP17020387A JPS6413756A JP S6413756 A JPS6413756 A JP S6413756A JP 62170203 A JP62170203 A JP 62170203A JP 17020387 A JP17020387 A JP 17020387A JP S6413756 A JPS6413756 A JP S6413756A
- Authority
- JP
- Japan
- Prior art keywords
- polycrystalline silicon
- capacitor
- film
- shaped
- silicon film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Abstract
PURPOSE:To increase capacitor capacitance by also forming a capacitor electrode on the underside of a capacitor gate electrode through an insulating film for a dielectric. CONSTITUTION:A field oxide film 2 is shaped selectively to the surface of a p-type silicon substrate 1, and a conductive layer 3 consisting of an impurity diffusion layer including an n-type impurity in high concentration is formed selectively. A contact hole is bored selectively to an silicon oxide film 4 on the conductive layer 3, a polycrystalline silicon film doped with an impurity is deposited and shaped, and the polycrystalline silicon film 5 is left through patterning. Part of the silicon oxide film 4 is removed through isotropic etching, using the polycrystalline silicon film 5 as a mask. An silicon oxide film is formed onto the surface of the polycrystalline silicon film 5 and the surface of the substrate in a specified region continuing to the surface of the films 5, and a polycrystalline silicon film doped with an impurity is deposited and shaped onto the whole surface. The polycrystalline silicon film is patterned, a capacitor electrode 7 and a wiring section continuing to the capacitor electrode are formed, and a MOS transistor is shaped. Accordingly, a semiconductor device having large capacitor capacitance is acquired even when the size of a capacitor gate electrode is small.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62170203A JPS6413756A (en) | 1987-07-08 | 1987-07-08 | Semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62170203A JPS6413756A (en) | 1987-07-08 | 1987-07-08 | Semiconductor device and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6413756A true JPS6413756A (en) | 1989-01-18 |
Family
ID=15900578
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62170203A Pending JPS6413756A (en) | 1987-07-08 | 1987-07-08 | Semiconductor device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6413756A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5939746A (en) * | 1995-12-14 | 1999-08-17 | Nec Corporation | Semiconductor memory device and manufacturing method of the same |
-
1987
- 1987-07-08 JP JP62170203A patent/JPS6413756A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5939746A (en) * | 1995-12-14 | 1999-08-17 | Nec Corporation | Semiconductor memory device and manufacturing method of the same |
| US5953609A (en) * | 1995-12-14 | 1999-09-14 | Nec Corporation | Method of manufacturing a semiconductor memory device |
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