JPS6411559U - - Google Patents
Info
- Publication number
- JPS6411559U JPS6411559U JP1987105933U JP10593387U JPS6411559U JP S6411559 U JPS6411559 U JP S6411559U JP 1987105933 U JP1987105933 U JP 1987105933U JP 10593387 U JP10593387 U JP 10593387U JP S6411559 U JPS6411559 U JP S6411559U
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- semiconductor light
- emitting element
- receiving current
- current amplifying
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 5
- 230000005540 biological transmission Effects 0.000 claims 1
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
Description
第1図は本考案の第一の実施例を説明するため
の半導体発光装置の断面図、第2図は第1図に示
す発光装置の回路図、第3図は本考案の第二の実
施例を説明するための発光装置の回路図、第4図
は本考案の第三の実施例を説明するための発光装
置の回路図、第5図は本考案の第四の実施例を説
明するための発光装置の回路図、第6図は従来の
一例を説明するための発光装置の回路図である。
1…発光ダイオード素子、2,7…ホトトンジ
スタ素子、3…共通電極部材、4…金線、5…個
別電極部材、6…透光性樹脂、8…トランジスタ
素子、9…ホトダイオード素子。
FIG. 1 is a sectional view of a semiconductor light emitting device for explaining a first embodiment of the present invention, FIG. 2 is a circuit diagram of the light emitting device shown in FIG. 1, and FIG. 3 is a second embodiment of the present invention. A circuit diagram of a light emitting device for explaining an example, FIG. 4 is a circuit diagram of a light emitting device for explaining a third embodiment of the present invention, and FIG. 5 is a circuit diagram of a light emitting device for explaining a fourth embodiment of the present invention. FIG. 6 is a circuit diagram of a light emitting device for explaining a conventional example. DESCRIPTION OF SYMBOLS 1... Light emitting diode element, 2, 7... Phototransistor element, 3... Common electrode member, 4... Gold wire, 5... Individual electrode member, 6... Transparent resin, 8... Transistor element, 9... Photodiode element.
Claims (1)
的に直列に接素した受光電流増幅素子と、前記半
導体発光素子と前記受光電流増幅素子を光学的に
結合する光伝達部とを有することを特徴とする半
導体発光素子。 It is characterized by comprising a semiconductor light emitting element, a light receiving current amplifying element electrically connected in series with the semiconductor light emitting element, and a light transmission section optically coupling the semiconductor light emitting element and the light receiving current amplifying element. Semiconductor light emitting device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1987105933U JPS6411559U (en) | 1987-07-10 | 1987-07-10 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1987105933U JPS6411559U (en) | 1987-07-10 | 1987-07-10 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6411559U true JPS6411559U (en) | 1989-01-20 |
Family
ID=31338991
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1987105933U Pending JPS6411559U (en) | 1987-07-10 | 1987-07-10 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6411559U (en) |
-
1987
- 1987-07-10 JP JP1987105933U patent/JPS6411559U/ja active Pending