JPS6411559U - - Google Patents

Info

Publication number
JPS6411559U
JPS6411559U JP1987105933U JP10593387U JPS6411559U JP S6411559 U JPS6411559 U JP S6411559U JP 1987105933 U JP1987105933 U JP 1987105933U JP 10593387 U JP10593387 U JP 10593387U JP S6411559 U JPS6411559 U JP S6411559U
Authority
JP
Japan
Prior art keywords
light emitting
semiconductor light
emitting element
receiving current
current amplifying
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1987105933U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1987105933U priority Critical patent/JPS6411559U/ja
Publication of JPS6411559U publication Critical patent/JPS6411559U/ja
Pending legal-status Critical Current

Links

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案の第一の実施例を説明するため
の半導体発光装置の断面図、第2図は第1図に示
す発光装置の回路図、第3図は本考案の第二の実
施例を説明するための発光装置の回路図、第4図
は本考案の第三の実施例を説明するための発光装
置の回路図、第5図は本考案の第四の実施例を説
明するための発光装置の回路図、第6図は従来の
一例を説明するための発光装置の回路図である。 1…発光ダイオード素子、2,7…ホトトンジ
スタ素子、3…共通電極部材、4…金線、5…個
別電極部材、6…透光性樹脂、8…トランジスタ
素子、9…ホトダイオード素子。
FIG. 1 is a sectional view of a semiconductor light emitting device for explaining a first embodiment of the present invention, FIG. 2 is a circuit diagram of the light emitting device shown in FIG. 1, and FIG. 3 is a second embodiment of the present invention. A circuit diagram of a light emitting device for explaining an example, FIG. 4 is a circuit diagram of a light emitting device for explaining a third embodiment of the present invention, and FIG. 5 is a circuit diagram of a light emitting device for explaining a fourth embodiment of the present invention. FIG. 6 is a circuit diagram of a light emitting device for explaining a conventional example. DESCRIPTION OF SYMBOLS 1... Light emitting diode element, 2, 7... Phototransistor element, 3... Common electrode member, 4... Gold wire, 5... Individual electrode member, 6... Transparent resin, 8... Transistor element, 9... Photodiode element.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 半導体発光素子と、前記半導体発光素子に電気
的に直列に接素した受光電流増幅素子と、前記半
導体発光素子と前記受光電流増幅素子を光学的に
結合する光伝達部とを有することを特徴とする半
導体発光素子。
It is characterized by comprising a semiconductor light emitting element, a light receiving current amplifying element electrically connected in series with the semiconductor light emitting element, and a light transmission section optically coupling the semiconductor light emitting element and the light receiving current amplifying element. Semiconductor light emitting device.
JP1987105933U 1987-07-10 1987-07-10 Pending JPS6411559U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1987105933U JPS6411559U (en) 1987-07-10 1987-07-10

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1987105933U JPS6411559U (en) 1987-07-10 1987-07-10

Publications (1)

Publication Number Publication Date
JPS6411559U true JPS6411559U (en) 1989-01-20

Family

ID=31338991

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1987105933U Pending JPS6411559U (en) 1987-07-10 1987-07-10

Country Status (1)

Country Link
JP (1) JPS6411559U (en)

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