JPS6410945B2 - - Google Patents
Info
- Publication number
- JPS6410945B2 JPS6410945B2 JP54007984A JP798479A JPS6410945B2 JP S6410945 B2 JPS6410945 B2 JP S6410945B2 JP 54007984 A JP54007984 A JP 54007984A JP 798479 A JP798479 A JP 798479A JP S6410945 B2 JPS6410945 B2 JP S6410945B2
- Authority
- JP
- Japan
- Prior art keywords
- type
- layer
- substrate
- drain
- potential
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 25
- 239000012535 impurity Substances 0.000 claims description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 27
- 229910052710 silicon Inorganic materials 0.000 description 27
- 239000010703 silicon Substances 0.000 description 27
- 238000009792 diffusion process Methods 0.000 description 13
- 238000003860 storage Methods 0.000 description 6
- 230000010354 integration Effects 0.000 description 4
- 230000000717 retained effect Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Landscapes
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP798479A JPS5599764A (en) | 1979-01-25 | 1979-01-25 | Mos memory device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP798479A JPS5599764A (en) | 1979-01-25 | 1979-01-25 | Mos memory device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5599764A JPS5599764A (en) | 1980-07-30 |
| JPS6410945B2 true JPS6410945B2 (enrdf_load_stackoverflow) | 1989-02-22 |
Family
ID=11680689
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP798479A Granted JPS5599764A (en) | 1979-01-25 | 1979-01-25 | Mos memory device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5599764A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05110114A (ja) * | 1991-10-17 | 1993-04-30 | Rohm Co Ltd | 不揮発性半導体記憶素子 |
-
1979
- 1979-01-25 JP JP798479A patent/JPS5599764A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5599764A (en) | 1980-07-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4298962A (en) | Memory | |
| US4669062A (en) | Two-tiered dynamic random access memory (DRAM) cell | |
| US4855953A (en) | Semiconductor memory device having stacked memory capacitors and method for manufacturing the same | |
| US4084108A (en) | Integrated circuit device | |
| US4695864A (en) | Dynamic storage device with extended information holding time | |
| US4780751A (en) | Semiconductor integrated circuit device | |
| US5030586A (en) | Method for manufacturing semiconductor memory device having improved resistance to α particle induced soft errors | |
| US4118794A (en) | Memory array with larger memory capacitors at row ends | |
| JPH0150114B2 (enrdf_load_stackoverflow) | ||
| JPS5833867A (ja) | ダイナミツク・メモリ・セル | |
| US5010379A (en) | Semiconductor memory device with two storage nodes | |
| US4353082A (en) | Buried sense line V-groove MOS random access memory | |
| JPS59191374A (ja) | 半導体集積回路装置 | |
| US4250568A (en) | Capacitor semiconductor storage circuit | |
| JPS6410945B2 (enrdf_load_stackoverflow) | ||
| US4571607A (en) | Semiconductor device | |
| US4702796A (en) | Method for fabricting a semiconductor device | |
| US4492973A (en) | MOS Dynamic memory cells and method of fabricating the same | |
| JP2554332B2 (ja) | １トランジスタ型ダイナミツクメモリセル | |
| JPH06105766B2 (ja) | 半導体集積回路装置の製造方法 | |
| EP0058998B1 (en) | Semiconductor memory device | |
| EP0061202A1 (en) | Semiconductor memory device | |
| JPS5814747B2 (ja) | 半導体記憶装置 | |
| JPS63219154A (ja) | 半導体装置 | |
| JPS60236260A (ja) | 半導体記憶装置 |