JPS641058B2 - - Google Patents

Info

Publication number
JPS641058B2
JPS641058B2 JP55082531A JP8253180A JPS641058B2 JP S641058 B2 JPS641058 B2 JP S641058B2 JP 55082531 A JP55082531 A JP 55082531A JP 8253180 A JP8253180 A JP 8253180A JP S641058 B2 JPS641058 B2 JP S641058B2
Authority
JP
Japan
Prior art keywords
stem
plating
nickel plating
lead
glass
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55082531A
Other languages
English (en)
Japanese (ja)
Other versions
JPS577951A (en
Inventor
Shoei Ikemoto
Kotaro Ishibashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Components Co Ltd
Original Assignee
Toshiba Components Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Components Co Ltd filed Critical Toshiba Components Co Ltd
Priority to JP8253180A priority Critical patent/JPS577951A/ja
Publication of JPS577951A publication Critical patent/JPS577951A/ja
Publication of JPS641058B2 publication Critical patent/JPS641058B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W70/02—

Landscapes

  • Lead Frames For Integrated Circuits (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Die Bonding (AREA)
JP8253180A 1980-06-18 1980-06-18 Manufacture of stem for semiconductor device needing no whole surface finishing nickel plating process Granted JPS577951A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8253180A JPS577951A (en) 1980-06-18 1980-06-18 Manufacture of stem for semiconductor device needing no whole surface finishing nickel plating process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8253180A JPS577951A (en) 1980-06-18 1980-06-18 Manufacture of stem for semiconductor device needing no whole surface finishing nickel plating process

Publications (2)

Publication Number Publication Date
JPS577951A JPS577951A (en) 1982-01-16
JPS641058B2 true JPS641058B2 (enExample) 1989-01-10

Family

ID=13777082

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8253180A Granted JPS577951A (en) 1980-06-18 1980-06-18 Manufacture of stem for semiconductor device needing no whole surface finishing nickel plating process

Country Status (1)

Country Link
JP (1) JPS577951A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0293183U (enExample) * 1989-01-12 1990-07-24

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4734350A (en) * 1986-12-29 1988-03-29 Xerox Corporation Positively charged developer compositions with modified charge enhancing additives containing amino alcohols

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6041860B2 (ja) * 1980-03-14 1985-09-19 日本電気ホームエレクトロニクス株式会社 気密端子の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0293183U (enExample) * 1989-01-12 1990-07-24

Also Published As

Publication number Publication date
JPS577951A (en) 1982-01-16

Similar Documents

Publication Publication Date Title
JPH0249021B2 (enExample)
DE1564491A1 (de) Elektrische Halbleitervorrichtung und Verfahren zu ihrer Herstellung
DE2314731B2 (de) Halbleiteranordnung mit höckerartigen Vorsprüngen auf Kontaktflecken und Verfahren zur Herstellung einer solchen Halbleiteranordnung
DE19540306C1 (de) Verfahren zur Herstellung von Leiterrahmen für Halbleiterbauelemente
USH498H (en) Electronic component including soldered electrical leads
JPS641058B2 (enExample)
JPS60189940A (ja) 樹脂封止型半導体装置の製法
DE3704200C2 (enExample)
DE1614761A1 (de) Verfahren zur Herstellung eines geerdeten Kapselbodens fuer Halbleiterelemente
JPH0150108B2 (enExample)
JPS57114265A (en) Ic lead frame and transistor comb and manufacture thereof
JPH03274755A (ja) 樹脂封止半導体装置とその製造方法
JPS588586B2 (ja) 半導体装置の封止方法
JPS5844597Y2 (ja) Ｉｃパツケ−ジ用リ−ド構造
JPS6032774Y2 (ja) 半導体装置用ステム
JP2537630B2 (ja) 半導体装置の製造方法
KR830002575B1 (ko) 기밀단자(氣密端子)의 제조방법
JPS5897851A (ja) 金属部品の製造方法
JPS60236251A (ja) 半導体装置用パツケ−ジ
JPS58100967A (ja) 金属部品の製造方法
JPS607491Y2 (ja) 半導体装置
JPS633462B2 (enExample)
JPS6146036A (ja) 半導体装置の製造方法
JPS6032779Y2 (ja) パワ−トランジスタステム
JPS5814606Y2 (ja) 半導体装置