JPS641058B2 - - Google Patents
Info
- Publication number
- JPS641058B2 JPS641058B2 JP8253180A JP8253180A JPS641058B2 JP S641058 B2 JPS641058 B2 JP S641058B2 JP 8253180 A JP8253180 A JP 8253180A JP 8253180 A JP8253180 A JP 8253180A JP S641058 B2 JPS641058 B2 JP S641058B2
- Authority
- JP
- Japan
- Prior art keywords
- stem
- plating
- nickel plating
- lead
- glass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 27
- 238000007747 plating Methods 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 15
- 229910052759 nickel Inorganic materials 0.000 claims description 13
- 239000011521 glass Substances 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 238000005245 sintering Methods 0.000 claims description 2
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000007730 finishing process Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Electroplating Methods And Accessories (AREA)
- Die Bonding (AREA)
Description
【発明の詳細な説明】
本発明は全面仕上げニツケル鍍金工程を要さな
い半導体装置用ステムの製造法に関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a stem for a semiconductor device that does not require a complete nickel plating process.
従来から半導体装置用ステムはリード線をステ
ム本体上に、ガラス融着をした后は、最終的に必
ず仕上げのニツケル鍍金を全面にわたつて、施す
ことを必要としていた。 Conventionally, stems for semiconductor devices have required final nickel plating to be applied over the entire surface of the stem body after the lead wires have been fused to the stem body.
もし、この全面にわたる仕上げニツケル鍍金を
施さない場合は、リード及びステム本体にFe.Ni
の地肌が露出し、そのために、これをそのまゝ使
用する時は、Al線、Au線をリードに接着する時
に、その接着性が悪く使用に耐えないものとして
信頼性に乏しく、不良品となつてしまう。それ
故、リード線をステム本体に、ガラス融着したの
ちに行うところの、最終仕上げニツケル鍍金とい
う工程は、どうしても省略できない重要工程とな
つていた。 If this entire surface is not finished with nickel plating, the lead and stem body should be coated with Fe.Ni.
The bare skin of the lead is exposed, and therefore, when used as is, when adhering the Al wire or Au wire to the lead, the adhesion is poor and it cannot withstand use, resulting in poor reliability and being considered a defective product. I get used to it. Therefore, the final step of nickel plating, which is performed after the lead wire is glass fused to the stem body, has become an important step that cannot be omitted.
本発明者等は、この半導体装置用ステムの製造
工程中不可欠とされているこの仕上げのニツケル
鍍金という工程を、全く省いてしまつても、その
方法で得られた製品が機能的にみて、従来から行
われている仕上げニツケル鍍金工程をほどこした
方法で得られた製品と比べて、何ら変りない半導
体装置用ステムを得ることのできる方法を開発し
た。 The present inventors believe that even if the finishing process of nickel plating, which is considered essential in the manufacturing process of semiconductor device stems, is completely omitted, the products obtained by this method will be functionally superior to those of conventional ones. We have developed a method that makes it possible to obtain stems for semiconductor devices that are no different from products obtained using the final nickel plating process used in the previous method.
本発明の目的は、このような方法を提供しよう
とするものである。 The object of the present invention is to provide such a method.
本発明に係る方法の要旨とする構成は、特許請
求の範囲に示す如くステム本体、リード等のステ
ムを構成する部品の夫々について、ガラス焼結前
に、これらの下地に銅鍍金とニツケル鍍金とを施
して表面に予め鍍金層を形成しておき、次にこれ
らをそのままガラスと同時に焼結することを特徴
とするものである。 The gist of the method according to the present invention is that, as shown in the claims, copper plating and nickel plating are applied to the base of each of the stem main body, lead, and other parts constituting the stem before glass sintering. This method is characterized in that a plating layer is preliminarily formed on the surface, and then this is sintered as it is at the same time as the glass.
この場合、ニツケル鍍金に先立ち銅鍍金を施す
ことにより、部品単体毎のニツケル鍍金の定着性
が向上する。また、銅鍍金を施すことはステムの
半田濡れ性が良好となり、さらにボンデイング性
の向上等の効果がある。 In this case, by applying copper plating prior to nickel plating, the fixation of the nickel plating on each component is improved. In addition, copper plating improves the solder wettability of the stem and has the effect of improving bonding properties.
次に本発明に係る方法の一実施例を、添付図面
を参照しながら説明する。 Next, an embodiment of the method according to the present invention will be described with reference to the accompanying drawings.
第１図は、半導体装置用ステムの平面図であ
り、図中１はステム本体、２はガラス孔、３はガ
ラス、及び４は接着用リードを夫々示す。第２図
は、第１図のＡ−Ａ線断面図である。 FIG. 1 is a plan view of a stem for a semiconductor device, in which 1 indicates a stem body, 2 a glass hole, 3 a glass, and 4 an adhesive lead. FIG. 2 is a sectional view taken along line A--A in FIG. 1.
かかる半導体装置用ステムは、表面に鍍金層イ
が形成されているが、第３図及び第４図に示すよ
うに、ステム本体１、リード４というようにステ
ム構成部品単体毎に予め銅鍍金、及びニツケル鍍
金を施す。この場合は銅鍍金、ニツケル鍍金の順
序で鍍金をする。 Such a stem for a semiconductor device has a plating layer (A) formed on its surface, and as shown in FIGS. and nickel plating. In this case, plating is performed in the order of copper plating and nickel plating.
その後、これらを組立ててガラス焼結を行ない
上記の半導体装置用ステムを得る。 Thereafter, these are assembled and glass sintered to obtain the above-mentioned stem for a semiconductor device.
次に本発明に係る方法を用いることにより得ら
れる利点を述べると
(1) ステムの仕上げの鍍金という工程を全面的に
省略できるために、その製造工程において時間
の短縮、人手の軽減、材料特に薬品の節約等、
経済面において顕著な効果が期待できる。 Next, the advantages obtained by using the method according to the present invention are as follows: (1) The process of finishing the stem with plating can be completely omitted, so in the manufacturing process, time and labor can be reduced, and materials, especially Savings on chemicals, etc.
Significant economic effects can be expected.
(2) 仕上げニツケル鍍金工程の全面廃止をした場
合は、リード線の曲りを惹起するというような
ことが一切無くなり、歩留り、作業性の点で大
巾な能率向上を期することができる。(2) If the finishing nickel plating process is completely abolished, there will be no bending of the lead wires, and a significant improvement in efficiency can be expected in terms of yield and workability.
第１図は本発明に係る方法で得たステム本体１
の平面図で第２図は第１図のＡ−Ａ線による切断
面図である。第３図は部品単体としてのステム本
体の全表面に鍍金層を形成せしめた状態を示す説
明図で第４図は部品単体としての接着用リードの
全表面に鍍金層を形成せしめた状態を示す同じく
説明図である。
１……ステム本体、２……ガラス孔、３……ガ
ラス、４……接着用リード、イ……鍍金層。
Figure 1 shows a stem body 1 obtained by the method according to the present invention.
FIG. 2 is a plan view of FIG. 2, which is a sectional view taken along line A--A in FIG. Fig. 3 is an explanatory diagram showing a state in which a plating layer is formed on the entire surface of the stem body as a single component, and Fig. 4 shows a state in which a plating layer is formed on the entire surface of the adhesive lead as a single component. It is also an explanatory diagram. 1...Stem body, 2...Glass hole, 3...Glass, 4...Adhesive lead, A...Plating layer.
Claims (1)
る部品の夫々について、ガラス焼結前に、これら
の下地に銅鍍金とニツケル鍍金とを施して表面に
予め鍍金層イを形成しておき、次にこれらをその
ままガラス３と同時に焼結することを特徴とする
半導体装置用ステムの製造法。1 Before glass sintering, copper plating and nickel plating are applied to the base of each of the parts constituting the stem, such as the stem body 1 and the lead 4, to form a plating layer A on the surface. A method for manufacturing a stem for a semiconductor device, characterized in that these are sintered as they are at the same time as the glass 3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8253180A JPS577951A (en) | 1980-06-18 | 1980-06-18 | Manufacture of stem for semiconductor device needing no whole surface finishing nickel plating process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8253180A JPS577951A (en) | 1980-06-18 | 1980-06-18 | Manufacture of stem for semiconductor device needing no whole surface finishing nickel plating process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS577951A JPS577951A (en) | 1982-01-16 |
| JPS641058B2 true JPS641058B2 (en) | 1989-01-10 |
Family
ID=13777082
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8253180A Granted JPS577951A (en) | 1980-06-18 | 1980-06-18 | Manufacture of stem for semiconductor device needing no whole surface finishing nickel plating process |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS577951A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0293183U (en) * | 1989-01-12 | 1990-07-24 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4734350A (en) * | 1986-12-29 | 1988-03-29 | Xerox Corporation | Positively charged developer compositions with modified charge enhancing additives containing amino alcohols |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6041860B2 (en) * | 1980-03-14 | 1985-09-19 | 日本電気ホームエレクトロニクス株式会社 | Manufacturing method for airtight terminals |
-
1980
- 1980-06-18 JP JP8253180A patent/JPS577951A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0293183U (en) * | 1989-01-12 | 1990-07-24 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS577951A (en) | 1982-01-16 |
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