JPS639756B2 - - Google Patents

Info

Publication number
JPS639756B2
JPS639756B2 JP57165654A JP16565482A JPS639756B2 JP S639756 B2 JPS639756 B2 JP S639756B2 JP 57165654 A JP57165654 A JP 57165654A JP 16565482 A JP16565482 A JP 16565482A JP S639756 B2 JPS639756 B2 JP S639756B2
Authority
JP
Japan
Prior art keywords
film
layer
transparent
conductive film
amorphous silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57165654A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5955080A (ja
Inventor
Shinji Nishiura
Yoshuki Uchida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Corporate Research and Development Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Corporate Research and Development Ltd filed Critical Fuji Electric Corporate Research and Development Ltd
Priority to JP57165654A priority Critical patent/JPS5955080A/ja
Publication of JPS5955080A publication Critical patent/JPS5955080A/ja
Publication of JPS639756B2 publication Critical patent/JPS639756B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/30Coatings
    • H10F77/306Coatings for devices having potential barriers
    • H10F77/311Coatings for devices having potential barriers for photovoltaic cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)
JP57165654A 1982-09-22 1982-09-22 薄膜光電変換装置 Granted JPS5955080A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57165654A JPS5955080A (ja) 1982-09-22 1982-09-22 薄膜光電変換装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57165654A JPS5955080A (ja) 1982-09-22 1982-09-22 薄膜光電変換装置

Publications (2)

Publication Number Publication Date
JPS5955080A JPS5955080A (ja) 1984-03-29
JPS639756B2 true JPS639756B2 (en, 2012) 1988-03-01

Family

ID=15816456

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57165654A Granted JPS5955080A (ja) 1982-09-22 1982-09-22 薄膜光電変換装置

Country Status (1)

Country Link
JP (1) JPS5955080A (en, 2012)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0247780U (en, 2012) * 1988-09-28 1990-04-03

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2718161B2 (ja) * 1989-03-30 1998-02-25 松下電器産業株式会社 太陽電池

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2931827A1 (de) * 1978-10-02 1980-04-10 Xerox Corp Abbildeverfahren und elektrisch- lichtempfindlicher verbundpartikel
JPS5846074B2 (ja) * 1979-03-12 1983-10-14 三洋電機株式会社 光起電力装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0247780U (en, 2012) * 1988-09-28 1990-04-03

Also Published As

Publication number Publication date
JPS5955080A (ja) 1984-03-29

Similar Documents

Publication Publication Date Title
EP0787354B1 (en) A method of manufacturing thin-film solar cells
EP0184298B1 (en) Thin film solar cell with thin cds and transparent window layer
US4623751A (en) Photovoltaic device and its manufacturing method
US4316049A (en) High voltage series connected tandem junction solar battery
US4528082A (en) Method for sputtering a PIN amorphous silicon semi-conductor device having partially crystallized P and N-layers
US4665609A (en) Process of manufacturing a photosensitive device having a plurality of detectors separated by zones impervious to the radiation to be detected
GB2023929A (en) Solar cell batteries
US4338482A (en) Photovoltaic cell
JPS63122283A (ja) アモルフアス太陽電池
GB2060251A (en) Solar Battery
AU2020453832B2 (en) Back contact solar cell and production method, and back contact battery assembly
US4507519A (en) Photoelectronic conversion device
JP2000133828A (ja) 薄膜太陽電池及びその製造方法
JPS639756B2 (en, 2012)
JPS61159771A (ja) 光起電力装置
JPH0221664B2 (en, 2012)
EP0321136B1 (en) Low light level solar cell
JPS5955079A (ja) 薄膜太陽電池
JPS59161081A (ja) 薄膜太陽電池
JP3278535B2 (ja) 太陽電池およびその製造方法
JPS6152992B2 (en, 2012)
US11862738B2 (en) Photovoltaic cell with passivated contacts and with non-reflective coating
JP2975751B2 (ja) 光起電力装置
KR102118905B1 (ko) 터널 산화막을 포함하는 태양 전지 및 이의 제조 방법
JPH0244523Y2 (en, 2012)