JPH0221664B2 - - Google Patents

Info

Publication number
JPH0221664B2
JPH0221664B2 JP58193635A JP19363583A JPH0221664B2 JP H0221664 B2 JPH0221664 B2 JP H0221664B2 JP 58193635 A JP58193635 A JP 58193635A JP 19363583 A JP19363583 A JP 19363583A JP H0221664 B2 JPH0221664 B2 JP H0221664B2
Authority
JP
Japan
Prior art keywords
electrode
photoelectric conversion
thin film
film
conversion element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58193635A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6085578A (ja
Inventor
Mario Fuse
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Business Innovation Corp
Original Assignee
Fuji Xerox Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Xerox Co Ltd filed Critical Fuji Xerox Co Ltd
Priority to JP58193635A priority Critical patent/JPS6085578A/ja
Publication of JPS6085578A publication Critical patent/JPS6085578A/ja
Publication of JPH0221664B2 publication Critical patent/JPH0221664B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Photovoltaic Devices (AREA)
JP58193635A 1983-10-17 1983-10-17 薄膜光電変換素子の製造方法 Granted JPS6085578A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58193635A JPS6085578A (ja) 1983-10-17 1983-10-17 薄膜光電変換素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58193635A JPS6085578A (ja) 1983-10-17 1983-10-17 薄膜光電変換素子の製造方法

Publications (2)

Publication Number Publication Date
JPS6085578A JPS6085578A (ja) 1985-05-15
JPH0221664B2 true JPH0221664B2 (en, 2012) 1990-05-15

Family

ID=16311220

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58193635A Granted JPS6085578A (ja) 1983-10-17 1983-10-17 薄膜光電変換素子の製造方法

Country Status (1)

Country Link
JP (1) JPS6085578A (en, 2012)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61279180A (ja) * 1985-06-04 1986-12-09 Semiconductor Energy Lab Co Ltd 光電変換装置の作製方法
JPS61279179A (ja) * 1985-06-04 1986-12-09 Semiconductor Energy Lab Co Ltd 光電変換装置の作製方法
JPS61279178A (ja) * 1985-06-04 1986-12-09 Semiconductor Energy Lab Co Ltd 光電変換装置の作製方法
JPS6258685A (ja) * 1985-09-09 1987-03-14 Fuji Electric Co Ltd 非晶質半導体太陽電池の製造方法
KR900006772B1 (ko) * 1985-11-06 1990-09-21 세미콘닥터 에너지 라보라토리 컴파니 리미티드 반도체층을 통한 전기적 단락이 없는 반도체 장치와 그 제조방법
US4729970A (en) * 1986-09-15 1988-03-08 Energy Conversion Devices, Inc. Conversion process for passivating short circuit current paths in semiconductor devices
JPH04266068A (ja) * 1991-02-20 1992-09-22 Canon Inc 光電変換素子及びその製造方法
JP4926150B2 (ja) * 2008-10-21 2012-05-09 三菱電機株式会社 薄膜太陽電池の製造方法および薄膜太陽電池の製造装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5950101B2 (ja) * 1976-07-12 1984-12-06 株式会社日立製作所 半導体装置の製法

Also Published As

Publication number Publication date
JPS6085578A (ja) 1985-05-15

Similar Documents

Publication Publication Date Title
US4064521A (en) Semiconductor device having a body of amorphous silicon
US4316049A (en) High voltage series connected tandem junction solar battery
KR100659044B1 (ko) 산화아연 박막을 가지는 태양전지 및 그 제조 방법
US4956023A (en) Integrated solar cell device
US5288338A (en) Solar cell and method of producing the solar cell
JP2000058888A (ja) 太陽電池及びその製造方法
JPH0221664B2 (en, 2012)
JPH0359588B2 (en, 2012)
GB2060251A (en) Solar Battery
JPH0595126A (ja) 薄膜太陽電池およびその製造方法
JPS59224183A (ja) 半導体装置
US4764476A (en) Method of making photoelectric conversion device
JPH0221663B2 (en, 2012)
JPH0221662B2 (en, 2012)
EP0321136B1 (en) Low light level solar cell
EP0070682B1 (en) Method of producing a semiconductor layer of amorphous silicon and a device including such a layer
JP2001274430A (ja) 薄膜光電変換装置
KR20050011212A (ko) 태양전지 및 그의 제조방법
US5084399A (en) Semi conductor device and process for fabrication of same
JP2000150935A (ja) 光起電力素子
Horiuchi et al. Fabrication and photoelectrochemical properties of interdigitated array microelectrodes consisting of optically transparent and nontransparent band electrodes
JPH0521821A (ja) 光電変換装置
JPH0481350B2 (en, 2012)
JPS6322465B2 (en, 2012)
JP3123816B2 (ja) 非晶質シリコンカーバイド層の製造方法及びこれを用いた光起電力装置