JPS6395673A - Insulated gate type field-effect transistor - Google Patents

Insulated gate type field-effect transistor

Info

Publication number
JPS6395673A
JPS6395673A JP61241404A JP24140486A JPS6395673A JP S6395673 A JPS6395673 A JP S6395673A JP 61241404 A JP61241404 A JP 61241404A JP 24140486 A JP24140486 A JP 24140486A JP S6395673 A JPS6395673 A JP S6395673A
Authority
JP
Japan
Prior art keywords
transistor
igbt
effect transistor
insulated gate
type field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61241404A
Other languages
Japanese (ja)
Inventor
Hideaki Ishibashi
秀明 石橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP61241404A priority Critical patent/JPS6395673A/en
Publication of JPS6395673A publication Critical patent/JPS6395673A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions

Landscapes

  • Bipolar Transistors (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、スイッチング用半導体素了の・−秤である
Ｉ　Ｇ　Ｂ　Ｔ　（Ｉｎ５ｕｌａｔｅｄ　Ｇａｔｅ　Ｂ
ｉｐｏｌａｒ　ａｂｏｄｅｔｒａｎｓｔｓｔｏｒ　；絶
縁ゲート形電界効果トランジスタ）素子、特にその改良
に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to an integrated gate B
The present invention relates to insulated gate field effect transistor (ipolar abode transistor) devices, and particularly to improvements thereof.

〔従来の技術〕[Conventional technology]

ＩＧＢＴＪＦ２子はバイポーラトランジスタの有する高
耐圧２人容徂化が容易であると云う長所と、パワーＭＯ
８ＦＥＴの有する高速なスイッチングが可能でドライブ
も容易であると云う長所とを併せもつ新しいデバイスと
して最近注目されているもので、ＩＧＴ、Ｃ０ＭＦＥＴ
、ＧＥＭＦＥＴまたはＢＪ、ＦＥＴなとの商品名で各社
がそれぞれ製品化している。IGBTJF2 has the advantages of bipolar transistors, such as the ability to easily accommodate two people with high voltage resistance, and the power MO.
It is recently attracting attention as a new device that combines the advantages of 8FET, such as high-speed switching and easy drive.IGT, C0MFET
, GEMFET, or BJ, FET, etc., are commercialized by various companies.

第２図にその断面！Ｒ造を示す。同図において、１はソ
ース電極、２は絶縁層、３はゲート、４はＨ＋層、５．
７はＰ層、６はＮ一層、８はドレイン電極である。Figure 2 shows the cross section! Shows R construction. In the figure, 1 is a source electrode, 2 is an insulating layer, 3 is a gate, 4 is an H+ layer, 5.
7 is a P layer, 6 is an N layer, and 8 is a drain electrode.

第３図にその等何回路を示す。すなわち、ＩＧＢＴはＰ
ＮＰトランジスタ１１およびＮＰＮトランジスタ１２と
、このＮＰＮトランジスタ１２に並列接続されたＦＥＴ
１３と、ＮＰＮトランジスタ１２のベース・エミッタ間
を短絡する短絡抵抗１４とからなり、トランジスタ１１
．１２で構成されるサイリスタ回路を内蔵している点が
特徴である。なお、ＩＧＢＴの回路記号を第３Ａ図に、
また、そのオン電圧とコレクタ電流との関係を第４図に
それぞれ示す。Figure 3 shows such circuits. In other words, IGBT is P
NP transistor 11, NPN transistor 12, and FET connected in parallel to this NPN transistor 12
13 and a shorting resistor 14 that shorts between the base and emitter of the NPN transistor 12.
．． It is characterized by having a built-in thyristor circuit consisting of 12 thyristor circuits. The IGBT circuit symbol is shown in Figure 3A.
Further, the relationship between the on-voltage and the collector current is shown in FIG. 4, respectively.

（発明が解決しようとする問題点〕 第４図の特性からも明らかなように、従来のＩＧＢＴで
はターンオフタイム（１）の長いもｆｆ のほとオン電圧が低く、ターンオフタイムが短くてオン
電圧の低い特性をもつ素子は存在しないのが現状である
。(Problems to be Solved by the Invention) As is clear from the characteristics shown in Figure 4, in conventional IGBTs, the longer the turn-off time (1), the lower the on-voltage, and the shorter the turn-off time, the lower the on-voltage. At present, there are no elements with poor characteristics.

したがって、この発明はターンオフタイムを短縮するこ
とが可能なＩＧＢＴ＄子を提供することを目的とする。Therefore, an object of the present invention is to provide an IGBT device that can shorten the turn-off time.

〔問題点を解決するための手段〕[Means for solving problems]

ＩＧＢｒの内部トランジスタ（Ｎ　（Ｐ）チャンネルＩ
ＧＢＴではＰＮＰ　（ＮＰＮ）　トランジスタ〕のベー
ス部を外部に引き出して構成する。Internal transistor of IGBr (N (P) channel I
A GBT is constructed by extending the base of a PNP (NPN) transistor to the outside.

〔作用〕[Effect]

ＩＧＢＴのターンオフ時にその内部トランシスターンオ
フタイムを短縮できるようにする。To shorten an internal transistor turn-off time when turning off an IGBT.

〔実施例〕 第１図はこの発明の実施例を示す構成図である。〔Example〕 FIG. 1 is a block diagram showing an embodiment of the present invention.

これは第２図と比較すれば明らかなように、絶縁層９を
介してベース電極１０を引き出した点が特徴である。こ
れは、ＮＰＮトランジスタのベース部を引き出したこと
に相当し、等価回路としては第１Ａ図の如く示される。As is clear from a comparison with FIG. 2, this is characterized in that the base electrode 10 is drawn out through the insulating layer 9. This corresponds to drawing out the base portion of an NPN transistor, and the equivalent circuit is shown as shown in FIG. 1A.

そして、ＩＧＢＴのターンオフ時にその内部トランジス
タのエミッタ（ＩＧＢＴのコレクタ）・ベース電極１０
との間を短絡または逆バイアスすれば、キャリアの消滅
が速められることから、そのターンオフタイムを従来の
ものより短縮させることができる。When the IGBT is turned off, the emitter (collector of the IGBT) and base electrode 10 of the internal transistor are
By short-circuiting or reverse biasing between the two, the carriers disappear more quickly, so the turn-off time can be made shorter than in the conventional case.

なお、以上ではＮチャンネルＩＧＢＴについて説明した
が、この発明はＰチャンネルＩ　Ｇ　Ｂ　Ｔの場合につ
いても同様にして適用し得ることは云う迄もない。Note that although the N-channel IGBT has been described above, it goes without saying that the present invention can be similarly applied to the P-channel IGBT.

（発明の効果〕 この発明によれば、Ｉ　Ｇ　Ｂ　Ｔの内部トランジスタ
（Ｎ　（Ｐ）チャンネルＩＧＢＴではＰＮＰ（ＮＰＮ）
トランジスタ〕のベース部を外部に引き出すようにした
ので、そのターンオフ時には内部トランジスタのベース
・エミッタ間を短絡または逆バイアスすることが可能と
なり、これによってターンオフタイムを短縮し得る利点
がもたらされる。(Effects of the Invention) According to the present invention, the internal transistor of the IGBT (PNP (NPN) in the N (P) channel IGBT)
Since the base portion of the transistor is brought out to the outside, it is possible to short-circuit or reverse bias the base and emitter of the internal transistor when the transistor is turned off, which has the advantage of shortening the turn-off time.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図はこの発明の実施例を示す構成図、第１Ａ図はこ
の発明によるＩＧＢＴを示す等価回路図、第２図は従来
のＩ　Ｇ　Ｂ　Ｔを示す断面構造図、第３図はその等価
回路図、第３Ａ図は従来のＩＧＢＴを示す回路記号図、
第４図はＩ　Ｇ　Ｂ　’ｒのオン電圧とコレクタ電流と
の関係を示す特性図である。 符号説明 １・・・ソース雷Ｉｆ！（エミッタ）、２．９・・・絶
縁層、３・・・ゲート、４・・・Ｎ＋層、５．７・・・
１層、６・・・Ｎ一層、８・・・ドレイン電極（コレク
タ）、１０・・・ベース電極、１１・・・ＰＮＰトラン
ジスタ、１２・・・ＮＰＮトランジスタ、１３・・・Ｍ
ＯＳＦＥＴ。 １４・・・類１８抵抗。 代理人　　弁理士　　並　木　昭　夫 代理人　　弁理士　　松　崎　　　清 第１図 第１Ａ図 （−）−ス） 第２図 第３図　、　第３Ａ図 エミッタ 第４図 ｖｏｎ（オンノ窩瓜）Fig. 1 is a configuration diagram showing an embodiment of the present invention, Fig. 1A is an equivalent circuit diagram showing an IGBT according to the invention, Fig. 2 is a cross-sectional structural diagram showing a conventional IGBT, and Fig. 3 is an equivalent circuit diagram thereof. Circuit diagram, Figure 3A is a circuit symbol diagram showing a conventional IGBT,
FIG. 4 is a characteristic diagram showing the relationship between the on-voltage and collector current of IGB'r. Code explanation 1... Source lightning If! (emitter), 2.9... Insulating layer, 3... Gate, 4... N+ layer, 5.7...
1 layer, 6...N single layer, 8...Drain electrode (collector), 10...Base electrode, 11...PNP transistor, 12...NPN transistor, 13...M
OSFET. 14...Class 18 resistance. Agent Patent Attorney Akio Namiki Agent Patent Attorney Kiyoshi Matsuzaki Figure 1 Figure 1A (-) - Figure 2 Figure 3, Figure 3A Emitter Figure 4 von

Claims (1)

【特許請求の範囲】 絶縁ゲート形電界効果トランジスタ（ＩＧＢＴ）におい
て、 その内部トランジスタ〔Ｎ（Ｐ）チャンネルＩＧＢＴで
はＰＮＰ（ＮＰＮ）トランジスタ〕のベース部を外部に
引き出してなることを特徴とする絶縁ゲート形電界効果
トランジスタ。[Claims] An insulated gate field effect transistor (IGBT) characterized in that the base portion of an internal transistor (PNP (NPN) transistor in an N(P) channel IGBT) is extended to the outside. type field effect transistor.
JP61241404A 1986-10-13 1986-10-13 Insulated gate type field-effect transistor Pending JPS6395673A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61241404A JPS6395673A (en) 1986-10-13 1986-10-13 Insulated gate type field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61241404A JPS6395673A (en) 1986-10-13 1986-10-13 Insulated gate type field-effect transistor

Publications (1)

Publication Number Publication Date
JPS6395673A true JPS6395673A (en) 1988-04-26

Family

ID=17073777

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61241404A Pending JPS6395673A (en) 1986-10-13 1986-10-13 Insulated gate type field-effect transistor

Country Status (1)

Country Link
JP (1) JPS6395673A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0313756U (en) * 1989-06-23 1991-02-12

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0313756U (en) * 1989-06-23 1991-02-12

Similar Documents

Publication Publication Date Title
US5072268A (en) MOS gated bipolar transistor
US5396087A (en) Insulated gate bipolar transistor with reduced susceptibility to parasitic latch-up
JPS6382123A (en) drive circuit
US5294816A (en) Unit cell arrangement for emitter switched thyristor with base resistance control
JP3163850B2 (en) Semiconductor device
JP3125567B2 (en) Insulated gate thyristor
KR860007750A (en) Semiconductor devices
JP2950569B2 (en) MOS type field effect transistor
JP2946750B2 (en) Semiconductor device
JPH01133414A (en) Cascode bimos driving circuit
RU2065642C1 (en) Bipolar transistor with dielectric-insulated gate
JP2003243548A (en) Semiconductor circuit and semiconductor device
JP2513665B2 (en) Insulated gate type thyristor
JP3182862B2 (en) Semiconductor device
JP3161092B2 (en) Dual gate MOS thyristor
JPS6395727A (en) Gate driving circuit for igbt
JPH084122B2 (en) Semiconductor device
JP3163746B2 (en) Semiconductor device
JPS6395725A (en) Driving circuit for igbt
JP2700026B2 (en) Insulated gate bipolar conduction transistor
JPH02266567A (en) Switching element
JPH02271672A (en) Semiconductor device
JPS63265465A (en) Semiconductor device
JPS59103425A (en) switching device
SU1287278A1 (en) Switching device with variable structure