JPS6390866A - Semiconductor photodetector - Google Patents
Semiconductor photodetectorInfo
- Publication number
- JPS6390866A JPS6390866A JP61236507A JP23650786A JPS6390866A JP S6390866 A JPS6390866 A JP S6390866A JP 61236507 A JP61236507 A JP 61236507A JP 23650786 A JP23650786 A JP 23650786A JP S6390866 A JPS6390866 A JP S6390866A
- Authority
- JP
- Japan
- Prior art keywords
- light
- receiving
- incident
- view
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/40—Optical elements or arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
Landscapes
- Light Receiving Elements (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は全モールドタイプのフォトダイオード。[Detailed description of the invention] [Industrial application field] The present invention is a photodiode of all mold types.
フォトトランジスターに関するものであり、特に、亦外
発光系子との組合せにより透過型フォトセンサーの受光
部として使用される半導体受光装置に関するものである
。The present invention relates to a phototransistor, and particularly to a semiconductor light receiving device used as a light receiving portion of a transmission type photosensor in combination with an external light emitting device.
従来この種の受光装置は内蔵した受光素子の受光面に対
し、垂直方向からの入射光を主として取扱い、受光素子
表面を櫨５樹脂面は素子表面と平行な平面あるいは入射
する光を集光して素子の受光面に当てるような凸レンズ
となっている。Conventionally, this type of light-receiving device mainly handles incident light from a direction perpendicular to the light-receiving surface of the built-in light-receiving element. It is a convex lens that shines onto the light-receiving surface of the element.
従って従来の受光装置において、素子側面方向からの入
射光による受光電流は、素子の一側面から結晶内部へ入
射する元による成分と、樹脂内部での乱反射によシ素子
の受光面に入射する元による成分でアシ、素子受光面に
垂直な方向からの入射光に対する受光電流に対し、大幅
に低下する。Therefore, in conventional light-receiving devices, the light-receiving current due to light incident from the side surface of the element consists of two components: a component that enters into the crystal from one side of the element, and a component that enters the light-receiving surface of the element due to diffuse reflection inside the resin. The light receiving current for incident light from the direction perpendicular to the light receiving surface of the element is significantly reduced due to the component due to the light receiving surface.
本発明は特に受光素子の側面方向からの入射光に対し、
高感度を有するよう、素子の受光面側の樹脂部形状を光
の入射側を厚く反対側が薄くなるような傾斜面にして、
素子表面に平行に入射した元が傾斜面にて全反射し、素
子受光面に入射するようにしたものである。また、入射
面に適当な径の凸レンズを設は光を集光してさらに感度
を上げることも可能であシ、またレンズの位置を適当に
設定することによシ受元素子表面内の特定位置に入射光
を集中させることも可能である。In particular, the present invention is effective against incident light from the side direction of the light-receiving element.
In order to achieve high sensitivity, the shape of the resin part on the light-receiving surface side of the element is made into an inclined surface that is thicker on the light incident side and thinner on the opposite side.
The light incident parallel to the element surface is totally reflected on the inclined surface and is incident on the element light receiving surface. In addition, by setting a convex lens of an appropriate diameter on the incident surface, it is possible to condense the light and further increase the sensitivity.Also, by appropriately setting the position of the lens, it is possible to identify the inside of the surface of the receiving element. It is also possible to concentrate the incident light at a position.
次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図は本発明の一実施例の平面図、また第２図はその
断面図である。第３図、第４図は光の入射面に凸レンズ
を有する実施例の平面図及び断面図である。第５図、第
６図は通常の素子表面方向からの入射光に高い感度を有
する受光装置の平面図及び断面図である。FIG. 1 is a plan view of an embodiment of the present invention, and FIG. 2 is a sectional view thereof. FIGS. 3 and 4 are a plan view and a sectional view of an embodiment having a convex lens on the light incident surface. FIGS. 5 and 6 are a plan view and a cross-sectional view of a light-receiving device that has high sensitivity to normal incident light from the direction of the element surface.
１は受光素子チップ、２はリードフレーム、３は樹脂、
４は素子表面に形成された受光面、５は側面方向から入
射した光を全反射するための反射面、６は光を集光する
ための凸レンズを示す。1 is a light receiving element chip, 2 is a lead frame, 3 is a resin,
Reference numeral 4 indicates a light-receiving surface formed on the surface of the element, reference numeral 5 indicates a reflecting surface for totally reflecting light incident from the side, and reference numeral 6 indicates a convex lens for condensing the light.
第２図において素子の側面方向から入射した光（矢印で
示す）は反射面５で全反射する。一般にエポキシ樹脂の
屈折率は約１．５であり、光が全反射する臨界角はθ＝
ｓｉｎ ’−Ｌ−＝ ４１．８°である。In FIG. 2, light (indicated by arrows) incident from the side surface of the element is totally reflected by the reflective surface 5. Generally, the refractive index of epoxy resin is about 1.5, and the critical angle for total reflection of light is θ=
sin'-L-=41.8°.
１．５
従って反射面５は△ＡＢＣが４８．２°以下であるよう
に設定される。但し、角度が小さくなる程樹脂内部での
光路が長くなシ、樹脂による光の吸収が大きくなる為感
度低下の要因となシネ利である。1.5 Therefore, the reflective surface 5 is set so that ΔABC is 48.2° or less. However, the smaller the angle, the longer the optical path inside the resin, and the greater the absorption of light by the resin, which is a cine effect that causes a decrease in sensitivity.
また、パッケージサイズも大きくなる。よって、ムＡＢ
Ｃは３０〜４５°程度が適当である。第３，４図に示す
ような凸レンズを有し、光を集光して感度を上げる場合
はレンズの直径の両端に入射された光が反射面で全反射
され少なくとも、素子受光面内に入射されるようなレン
ズ径と、素子の位置が設定される。Moreover, the package size also increases. Therefore, MAB
C is suitably about 30 to 45 degrees. When using a convex lens as shown in Figures 3 and 4 to condense light to increase sensitivity, the light incident on both ends of the diameter of the lens is totally reflected by the reflective surface and at least enters the light-receiving surface of the element. The lens diameter and the position of the element are set so that the
以上説明したように本発明は素子の側面方向からの入射
光に対し高い受光感度を有する受光装置を提供出来る為
、本発明を応用することによ）、同一リードフレーム内
に半導体発光素子と半導体受光素子をそれぞれの側面が
相対するよう搭載された光学的センサーすなわち、透過
型の７オトインタラブタが提供出来る。As explained above, the present invention can provide a light-receiving device that has high light-receiving sensitivity for light incident from the side surface of the element. It is possible to provide an optical sensor in which light-receiving elements are mounted so that their respective sides face each other, that is, a transmissive type 7-interceptor.
第１図は本発明の一実施例の平面図、また第２図はその
断面図である。第３図、第４図は光の入射面に凸レンズ
を有する実施例の平面図及び断面図である。第５図、第
６図は通常の素子表面方向からの入射光に高い感度を有
する受光装置の平面図及び断面図である。
１は受光素子チップ、２はリードフレーム、３は樹脂、
４は素子表面に形成された受光面、５は側面方向から入
射した光を全反射するだめの反射面、６は光を集光する
だめの凸レンズを示す。FIG. 1 is a plan view of an embodiment of the present invention, and FIG. 2 is a sectional view thereof. FIGS. 3 and 4 are a plan view and a sectional view of an embodiment having a convex lens on the light incident surface. FIGS. 5 and 6 are a plan view and a cross-sectional view of a light-receiving device that has high sensitivity to normal incident light from the direction of the element surface. 1 is a light receiving element chip, 2 is a lead frame, 3 is a resin,
Reference numeral 4 indicates a light-receiving surface formed on the surface of the element, reference numeral 5 indicates a reflecting surface for totally reflecting light incident from the side, and reference numeral 6 indicates a convex lens for condensing light.
Claims (1)
樹脂で覆った構造を有する半導体受光装置において、受
光素子表面側の樹脂部分が、素子の側面方向から入射し
た光を全反射するように、光の入射側を厚く、また、反
対側が薄くなるような傾斜面を有する全反射型プリズム
であることを特徴とする半導体受光装置。In a semiconductor light-receiving device that has a structure in which a semiconductor light-receiving element is mounted on a lead frame and the outside of the lead frame is covered with resin, the resin part on the front side of the light-receiving element is designed to completely reflect light incident from the side of the element. 1. A semiconductor light-receiving device characterized by being a total reflection type prism having an inclined surface that is thick on the incident side and thin on the opposite side.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61236507A JPS6390866A (en) | 1986-10-03 | 1986-10-03 | Semiconductor photodetector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61236507A JPS6390866A (en) | 1986-10-03 | 1986-10-03 | Semiconductor photodetector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6390866A true JPS6390866A (en) | 1988-04-21 |
Family
ID=17001745
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61236507A Pending JPS6390866A (en) | 1986-10-03 | 1986-10-03 | Semiconductor photodetector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6390866A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5023447A (en) * | 1989-06-19 | 1991-06-11 | Fujitsu Limited | Photo-semiconductor module employing semi-spherical lens to enhance detection |
| US5045908A (en) * | 1990-09-25 | 1991-09-03 | Motorola, Inc. | Vertically and laterally illuminated p-i-n photodiode |
| JPH04111761U (en) * | 1991-03-14 | 1992-09-29 | ホーヤ株式会社 | Light receiving element |
| US6004046A (en) * | 1996-11-29 | 1999-12-21 | Sumitomo Electric Industries, Ltd. | Optical module and method of making the same |
| US6213650B1 (en) | 1998-02-20 | 2001-04-10 | Sumitomo Electric Industries, Ltd. | Method of making optical module |
| US6257773B1 (en) | 1998-02-20 | 2001-07-10 | Sumitomo Electric Industries, Ltd. | Optical module and optical reflecting member |
| US6929405B2 (en) | 2002-01-15 | 2005-08-16 | Sharp Kabushiki Kaisha | Optical communication module and single fiber bi-directional optical communication module |
| JP2010217142A (en) * | 2009-03-19 | 2010-09-30 | Yamatake Corp | Optical sensor |
-
1986
- 1986-10-03 JP JP61236507A patent/JPS6390866A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5023447A (en) * | 1989-06-19 | 1991-06-11 | Fujitsu Limited | Photo-semiconductor module employing semi-spherical lens to enhance detection |
| US5045908A (en) * | 1990-09-25 | 1991-09-03 | Motorola, Inc. | Vertically and laterally illuminated p-i-n photodiode |
| JPH04111761U (en) * | 1991-03-14 | 1992-09-29 | ホーヤ株式会社 | Light receiving element |
| US6004046A (en) * | 1996-11-29 | 1999-12-21 | Sumitomo Electric Industries, Ltd. | Optical module and method of making the same |
| US6213650B1 (en) | 1998-02-20 | 2001-04-10 | Sumitomo Electric Industries, Ltd. | Method of making optical module |
| US6257773B1 (en) | 1998-02-20 | 2001-07-10 | Sumitomo Electric Industries, Ltd. | Optical module and optical reflecting member |
| US6929405B2 (en) | 2002-01-15 | 2005-08-16 | Sharp Kabushiki Kaisha | Optical communication module and single fiber bi-directional optical communication module |
| JP2010217142A (en) * | 2009-03-19 | 2010-09-30 | Yamatake Corp | Optical sensor |
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