JPS638624B2 - - Google Patents

Info

Publication number
JPS638624B2
JPS638624B2 JP53140285A JP14028578A JPS638624B2 JP S638624 B2 JPS638624 B2 JP S638624B2 JP 53140285 A JP53140285 A JP 53140285A JP 14028578 A JP14028578 A JP 14028578A JP S638624 B2 JPS638624 B2 JP S638624B2
Authority
JP
Japan
Prior art keywords
region
semiconductor
gate
current
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53140285A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5565463A (en
Inventor
Junichi Nishizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP14028578A priority Critical patent/JPS5565463A/ja
Publication of JPS5565463A publication Critical patent/JPS5565463A/ja
Publication of JPS638624B2 publication Critical patent/JPS638624B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/202—FETs having static field-induced regions, e.g. static-induction transistors [SIT] or permeable base transistors [PBT]

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
JP14028578A 1978-11-13 1978-11-13 Semiconductor device Granted JPS5565463A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14028578A JPS5565463A (en) 1978-11-13 1978-11-13 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14028578A JPS5565463A (en) 1978-11-13 1978-11-13 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5565463A JPS5565463A (en) 1980-05-16
JPS638624B2 true JPS638624B2 (forum.php) 1988-02-23

Family

ID=15265216

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14028578A Granted JPS5565463A (en) 1978-11-13 1978-11-13 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5565463A (forum.php)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3988598A2 (en) 2020-10-22 2022-04-27 FUJIFILM Business Innovation Corp. Liquid composition, metallic luster film, and article

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5034785A (en) * 1986-03-24 1991-07-23 Siliconix Incorporated Planar vertical channel DMOS structure
DE3752273T2 (de) * 1986-11-19 1999-09-09 Nishizawa Statische Induktionstransistoren mit isoliertem Gatter in einer eingeschnittenen Stufe und Verfahren zu deren Herstellung
US4761679A (en) * 1986-12-22 1988-08-02 North American Philips Corporation Complementary silicon-on-insulator lateral insulated gate rectifiers
US5164325A (en) * 1987-10-08 1992-11-17 Siliconix Incorporated Method of making a vertical current flow field effect transistor
US4914058A (en) * 1987-12-29 1990-04-03 Siliconix Incorporated Grooved DMOS process with varying gate dielectric thickness
US4992390A (en) * 1989-07-06 1991-02-12 General Electric Company Trench gate structure with thick bottom oxide
US5242845A (en) * 1990-06-13 1993-09-07 Kabushiki Kaisha Toshiba Method of production of vertical MOS transistor
DE4300806C1 (de) * 1993-01-14 1993-12-23 Siemens Ag Verfahren zur Herstellung von vertikalen MOS-Transistoren
US5405794A (en) * 1994-06-14 1995-04-11 Philips Electronics North America Corporation Method of producing VDMOS device of increased power density
US5770878A (en) * 1996-04-10 1998-06-23 Harris Corporation Trench MOS gate device
US5929476A (en) * 1996-06-21 1999-07-27 Prall; Kirk Semiconductor-on-insulator transistor and memory circuitry employing semiconductor-on-insulator transistors
US6500744B2 (en) 1999-09-02 2002-12-31 Micron Technology, Inc. Methods of forming DRAM assemblies, transistor devices, and openings in substrates
JP4939797B2 (ja) * 2005-11-01 2012-05-30 ルネサスエレクトロニクス株式会社 スイッチング半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3988598A2 (en) 2020-10-22 2022-04-27 FUJIFILM Business Innovation Corp. Liquid composition, metallic luster film, and article

Also Published As

Publication number Publication date
JPS5565463A (en) 1980-05-16

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