JPS638610B2 - - Google Patents

Info

Publication number
JPS638610B2
JPS638610B2 JP57085934A JP8593482A JPS638610B2 JP S638610 B2 JPS638610 B2 JP S638610B2 JP 57085934 A JP57085934 A JP 57085934A JP 8593482 A JP8593482 A JP 8593482A JP S638610 B2 JPS638610 B2 JP S638610B2
Authority
JP
Japan
Prior art keywords
deflection
aperture
deflectors
deflector
charged beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57085934A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58202529A (ja
Inventor
Mamoru Nakasuji
Kanji Wada
Tadahiro Takigawa
Izumi Kasahara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Shibaura Machine Co Ltd
Original Assignee
Toshiba Corp
Toshiba Machine Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Machine Co Ltd filed Critical Toshiba Corp
Priority to JP8593482A priority Critical patent/JPS58202529A/ja
Publication of JPS58202529A publication Critical patent/JPS58202529A/ja
Publication of JPS638610B2 publication Critical patent/JPS638610B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)
JP8593482A 1982-05-21 1982-05-21 荷電ビ−ム光学鏡筒 Granted JPS58202529A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8593482A JPS58202529A (ja) 1982-05-21 1982-05-21 荷電ビ−ム光学鏡筒

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8593482A JPS58202529A (ja) 1982-05-21 1982-05-21 荷電ビ−ム光学鏡筒

Publications (2)

Publication Number Publication Date
JPS58202529A JPS58202529A (ja) 1983-11-25
JPS638610B2 true JPS638610B2 (ro) 1988-02-23

Family

ID=13872582

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8593482A Granted JPS58202529A (ja) 1982-05-21 1982-05-21 荷電ビ−ム光学鏡筒

Country Status (1)

Country Link
JP (1) JPS58202529A (ro)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5093571A (ro) * 1973-12-19 1975-07-25
JPS522176A (en) * 1975-06-13 1977-01-08 Ibm Method of forming integrated circuit pattern
JPS545664A (en) * 1977-06-15 1979-01-17 Cho Lsi Gijutsu Kenkyu Kumiai Device for exposing electron beam

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52131963U (ro) * 1976-03-31 1977-10-06

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5093571A (ro) * 1973-12-19 1975-07-25
JPS522176A (en) * 1975-06-13 1977-01-08 Ibm Method of forming integrated circuit pattern
JPS545664A (en) * 1977-06-15 1979-01-17 Cho Lsi Gijutsu Kenkyu Kumiai Device for exposing electron beam

Also Published As

Publication number Publication date
JPS58202529A (ja) 1983-11-25

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