JPS6379991A - Nickel electroplating bath and plating method using the same - Google Patents

Nickel electroplating bath and plating method using the same

Info

Publication number
JPS6379991A
JPS6379991A JP22332486A JP22332486A JPS6379991A JP S6379991 A JPS6379991 A JP S6379991A JP 22332486 A JP22332486 A JP 22332486A JP 22332486 A JP22332486 A JP 22332486A JP S6379991 A JPS6379991 A JP S6379991A
Authority
JP
Japan
Prior art keywords
nickel
plating
bath
acid
chloride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22332486A
Other languages
Japanese (ja)
Inventor
Hideyuki Kobayashi
秀行 小林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shinko Electric Industries Co Ltd
Original Assignee
Shinko Electric Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinko Electric Industries Co Ltd filed Critical Shinko Electric Industries Co Ltd
Priority to JP22332486A priority Critical patent/JPS6379991A/en
Publication of JPS6379991A publication Critical patent/JPS6379991A/en
Pending legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22DCASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
    • B22D1/00Treatment of fused masses in the ladle or the supply runners before casting
    • B22D1/002Treatment with gases
    • B22D1/005Injection assemblies therefor

Abstract

PURPOSE:To obtain a nickel electroplating bath enabling nickel plating with superior throwing power by preparing a plating bath contg. nickel chloride, an alkali salt of sulfuric acid and boric acid. CONSTITUTION:A nickel electroplating bath contg. a nickel halide such as nickel chloride or nickel bromide as a nickel source which doubles as an anode dissolution accelerator or nickel sulfate or nickel sulfamate as a nickel source and a halide such as sodium chloride or potassium bromide as an anode dissolution accelerator, an alkali salt of sulfuric acid, sulfamic acid or methanesulfonic acid as an electrically conductive salt and boric acid as a buffer is prepd. The amount of metallic nickel in the bath is 0.01-1mol/l, the molar ratio of the metallic nickel to the electrically conductive salt is 1:>=2 and the amount of the boric acid is 0.1mol/l the saturation concn. When plating is carried out by a PR process with the plating bath, a plated nickel film of a uniform thickness is obtd.

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は電解ニッケルめっき浴およびこれを用いためっ
き方法に関するものである。
DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an electrolytic nickel plating bath and a plating method using the same.

(背景技術) 電子部品等は、近年ますます製品の形状が小型化、複雑
化してきている。また機能特性の一層の向上が要求され
、めっき分野においても金めつき等の各種機能めっきの
下地となるニッケルめっきのめっき厚のバラツキは、M
 I L規格(金めつきの下地ではニッケル厚が1.2
μm〜8.4μm)並あるいはそれ以上、例えばめっき
厚のバラツキを±50%以内に納めるというように厳し
い条件が要求されている。
(Background Art) In recent years, the shapes of electronic components and the like have become increasingly smaller and more complex. In addition, further improvements in functional properties are required, and in the plating field, variations in the plating thickness of nickel plating, which is the base for various functional platings such as gold plating, are
I L standard (nickel thickness for gold plating base is 1.2
Strict conditions are required, such as keeping the variation in plating thickness within ±50%.

1 現在ニッケルめっき浴の主流はワット浴あるい・□
はスルファミン酸浴である。
1 Currently, the mainstream nickel plating bath is Watt bath or □
is a sulfamic acid bath.

Cヮ2,1、浴。浴、成、よ例え4、 硫酸ニッケル     300g/β 塩化ニッケル     40g/ρ ホウ酸          40g/βであり、スルフ
ァミン酸浴の浴組成は例えば、スルファミン酸ニッケル
300g/ff塩化ニッケル     40g/7! ホウ酸        40g/ρ である。
Cヮ2.1, bath. Bath, composition, example 4. Nickel sulfate 300g/β Nickel chloride 40g/ρ Boric acid 40g/β, and the bath composition of the sulfamic acid bath is, for example, nickel sulfamate 300g/ff nickel chloride 40g/7! Boric acid: 40g/ρ.

しかしながら上記のワット浴あるいばスルファミン酸浴
は、めっきのつきまわり、均一電着性が悪く、前述のよ
うに被めっき物の形状が小型化、複雑化すると膜厚のバ
ラツキが大きくなり、厚い所と薄い所とでは10数倍も
の差がでてしまう。
However, the above-mentioned Watt bath or sulfamic acid bath has poor plating coverage and uniform electrodeposition, and as mentioned above, as the shape of the plated object becomes smaller and more complex, the variation in film thickness becomes large. There is a difference of more than 10 times between the area and the thin area.

例えば半導体装置用気密ガラス端子にバレルめっきを行
った場合、リードポスト先端面に付くニッケルめっき厚
は10μm以上となり、アイレット(金属外環)表面上
には2μm程度となるなど凹凸部によってめっき厚にバ
ラツキが生じ、前述のノケルめっきが厚いため、加熱に
よるフクレやワイヤーボンディングの剥れ等が生しる問
題点がある。
For example, when barrel plating is applied to an airtight glass terminal for a semiconductor device, the thickness of the nickel plating on the tip of the lead post is 10 μm or more, and on the surface of the eyelet (metal outer ring) it is about 2 μm. Variations occur, and because the aforementioned Nokel plating is thick, there are problems such as blistering and peeling of wire bonding due to heating.

またリードレスチップキャリア(1−CC)の場合、め
っき工程では被めっき物に小径のスルーポールが形成さ
れており、このスルーポール内壁へニッケルめっきを均
一に電着さセることは困難であり、必要なはんだ付は性
が確保されない等の問題点がある。
In addition, in the case of leadless chip carriers (1-CC), small-diameter through-poles are formed on the object to be plated during the plating process, and it is difficult to uniformly electrodeposit nickel plating on the inner walls of these through-poles. However, there are problems such as the required soldering does not ensure proper soldering.

さらにはDIPタイプあるいはPGAタイプの半導体装
置用パッケージに下地めっきとしてニッケルめっきを施
す場合にも、凹所にあるステージ部に比してインナーリ
ード部のめっきが厚くなり、金めつきを施した場合にや
はり加熱によるフクレが生じたり、またワイヤーボンデ
ィングの剥がれ等が生ずる問題点がある。
Furthermore, when applying nickel plating as the base plating to a DIP type or PGA type semiconductor device package, the plating on the inner lead part is thicker than on the stage part in the recess, and when gold plating is applied. However, there are also problems such as blistering caused by heating and peeling of wire bonding.

本発明は上記種々の事情に鑑みてなされたものであり、
その目的とするところは、均一電着性に優れた電解ニッ
ケルめっき浴および一層均一にニッケルめっきを施すこ
とのできる電解ニッケルめっき方法を提供するにある。
The present invention has been made in view of the various circumstances mentioned above,
The purpose is to provide an electrolytic nickel plating bath with excellent uniform electrodeposition and an electrolytic nickel plating method that can perform nickel plating more uniformly.

(発明の概要) 上記目的による本発明の電解ニッケルめっき浴は、ニッ
ケル源および陽極溶解促進剤として塩化ニッケル、臭化
ニッケル等のハロゲン化ニッケル、もしくはニッケル源
として硫酸ニッケルまたはスルファミン酸ニッケルと陽
極溶解促進剤として塩化ナトリウム、臭化カリウム等の
ハロゲン化物と、電気伝導度塩として硫酸、スルファミ
ン酸またはメタンスルホン酸のアルカリ塩と、緩衝剤と
を含むことを特徴としている。
(Summary of the Invention) The electrolytic nickel plating bath of the present invention for the above purpose uses a nickel halide such as nickel chloride or nickel bromide as a nickel source and an anodic dissolution promoter, or anodic dissolution with nickel sulfate or nickel sulfamate as a nickel source. It is characterized by containing a halide such as sodium chloride or potassium bromide as a promoter, an alkali salt of sulfuric acid, sulfamic acid or methanesulfonic acid as an electrical conductivity salt, and a buffer.

また、ニッケル源および陽極溶解促進剤として塩化ニッ
ケル、臭化ニッケル等のハロゲン化ニッケル、もしくは
ニッケル源として硫酸ニッケルまたはスルファミン酸ニ
ッケルと陽極溶解促進剤として塩化ナトリウム、臭化カ
リウム等のハロゲン化物と、電気伝導度塩として硫酸、
スルファミン酸またはメタンスルホン酸のアルカリ塩と
、緩衝剤とを含む電解ニッケルめっき浴を用いて、PR
法によりめっきすることを特徴としている。
In addition, nickel halides such as nickel chloride and nickel bromide as a nickel source and anode dissolution promoter, or nickel sulfate or nickel sulfamate as a nickel source and halides such as sodium chloride and potassium bromide as anode dissolution promoters, Sulfuric acid as electrical conductivity salt,
PR using an electrolytic nickel plating bath containing an alkali salt of sulfamic acid or methanesulfonic acid and a buffering agent.
It is characterized by being plated using a method.

本発明ではニッケル源および陽極溶解促進剤として塩化
ニッケル、臭化ニッケル等のハロゲン化ニッケルを用い
るのが好適であるが、ニッケル源を硫酸ニッケルまたは
スルファミン酸ニッケルとし、塩化ナトリウム、臭化カ
リウム等のハロゲン化物とを合わせて用いてもよい。ニ
ッケル塩濃度は金属ニッケルとして0.01M/ A 
−IM/ ffとするが、0.1M/ 1〜0.4M 
7!程度が好適である。これは前述のワット浴、スルフ
ァミン酸浴が金属ニッケルとして1.7M/ ff前後
であるのに比してかなり低い。電気伝導度塩としては硫
酸ナトリウム等の硫酸のアルカリ塩、スルファミン酸ナ
トリウム、スルファミン酸カリウム等のスルファミン酸
のアルカリ塩またばメタンスルホン酸カリウムなどのメ
タンスルボン酸のアルカリ塩が好適である。
In the present invention, it is preferable to use nickel halides such as nickel chloride and nickel bromide as the nickel source and anode dissolution promoter. It may be used in combination with a halide. Nickel salt concentration is 0.01M/A as metallic nickel.
-IM/ff, but 0.1M/1~0.4M
7! degree is suitable. This is considerably lower than the aforementioned Watt bath and sulfamic acid bath, which are around 1.7 M/ff as metallic nickel. Suitable electrical conductivity salts include alkali salts of sulfuric acid such as sodium sulfate, alkali salts of sulfamic acid such as sodium sulfamate and potassium sulfamate, and alkali salts of methanesulfonic acid such as potassium methanesulfonate.

均一電着性は金属ニッケルに対する電気伝導度塩のモル
比が高ければ高い程優れているが、このモル比が高くな
る程電流密度が高くとれなくなり、高速性に劣るので、
電気伝導度塩濃度は、このモル比で1〜2以上であまり
高くないほうが好ましい。またPl+も高い方が均一電
着性に優れる傾向が見られたが、あまり高いと加熱によ
るめっきのフクレ等が生じやすいのでPHは4〜5程度
が好ましい。
The higher the molar ratio of the electrical conductivity salt to the metal nickel, the better the uniform electrodeposition, but as this molar ratio increases, the current density cannot be high and the high speed is inferior.
The electrical conductivity salt concentration is preferably 1 to 2 or more at this molar ratio and not too high. It was also observed that the higher Pl+, the better the uniform electrodeposition, but if it is too high, the plating tends to blister due to heating, so the pH is preferably about 4 to 5.

緩衝剤としてはホウ酸を用い、その含有量は0゜1M/
β〜飽和が有効である。
Boric acid is used as a buffer, and its content is 0°1M/
β~Saturation is valid.

上記の浴組成で通常の直流電源によって前述のごとく優
れた均一電着性が得られた。
With the above bath composition, excellent uniform electrodeposition was obtained as described above using a normal DC power supply.

なおPR法でめっきしたところ、−層均一な厚さのニッ
ケルめっき膜が得られた。
When plating was performed using the PR method, a nickel plating film with a uniform thickness was obtained.

以下に具体的な実施例を示す。Specific examples are shown below.

(実施例) 実施例1 塩化ニッケル      0.25M/ 1硫酸ナトリ
ウム      0.5M/7!ホウ酸       
  0.75M/ 7!上記浴を用い、PI(4,0、
浴温55°Cl2A、7分30秒のハルセル試験を行っ
たところ、高電流密度側はやけて黒くなったが、残りは
白い無光沢となった。また第1図の4点の膜厚をケイ光
X線膜厚測定器(セイコー電子工業製SFT 157)
を用い、測定したところ表1のようになった。
(Example) Example 1 Nickel chloride 0.25M/1 Sodium sulfate 0.5M/7! Boric acid
0.75M/7! Using the above bath, PI(4,0,
When a Hull cell test was conducted at a bath temperature of 55° C. Cl2A for 7 minutes and 30 seconds, the high current density side faded and turned black, but the rest became white and matte. In addition, the film thickness at the four points in Figure 1 was measured using a fluorescent X-ray film thickness measuring device (SFT 157 manufactured by Seiko Electronic Industries).
Table 1 shows the results when measured using the following.

なお、それぞれ対応する点の電流密度は寺門、長板の式
より求めた。
In addition, the current density at each corresponding point was determined using Terakado and Nagaita's equations.

表   1 上記の値をフィールドの式に入れ、均一電着性を求めた
ところ均一電着性は54%であった。同様にワット浴を
用い、均一電着性を求めたところ、均一電着性は一3%
であり、上記浴が優れた均一電着性を有することがわか
った。
Table 1 The above values were entered into Field's equation to determine the uniform electrodeposition property, which was found to be 54%. Similarly, when the uniform electrodeposition was determined using a Watt bath, the uniform electrodeposition was 13%.
It was found that the above bath had excellent uniform electrodeposition properties.

なお、ニッケル源と電気伝導度塩を変え、同様の方法で
均一電着性を測定したところ、表2のようになり各音と
も優れた均一電着性を有することがわかった。
When the uniform electrodeposition was measured in the same manner using different nickel sources and electrical conductivity salts, the results shown in Table 2 were obtained, and it was found that each sample had excellent uniform electrodeposition.

表    2 ニッケル濃度0.25M/ 1  電気伝導度塩濃度 
0.5M/1実施例2 塩化ニッケル      0.25M/ρ硫酸ナトリウ
ム      0.5M/7!ホウ酸        
 0.75?I/ρ上記浴を用い、PH4,0,55℃
、2 A/d n(で第2図のような半導体装置用セラ
ミックパッケージに4μmねらいでランク法でニッケル
めっきを施した。ステージ部10、インナーリード部1
2、シールリング部14のニッケルめっき厚は3.5 
μm、4.7 μm、4.4 μmとなった。同じセラ
ミックパッケージにワット浴を用いてランク法でニッケ
ルめっきを施したところ、ステージ部、インナーリード
部、シールリング部は3.0μm 、9.1  μm 
、7.4 μmとなった。このように上記浴を用いた場
合ニッケルを均一にめっきできることがわかる。
Table 2 Nickel concentration 0.25M/1 Electrical conductivity salt concentration
0.5M/1 Example 2 Nickel chloride 0.25M/ρ Sodium sulfate 0.5M/7! Boric acid
0.75? I/ρ Using the above bath, PH4, 0, 55℃
, 2 A/d n (Nickel plating was applied to a ceramic package for a semiconductor device as shown in Fig. 2 by the rank method with an aim of 4 μm. Stage part 10, inner lead part 1
2. The nickel plating thickness of the seal ring part 14 is 3.5
μm, 4.7 μm, and 4.4 μm. When the same ceramic package was nickel plated using the rank method using a Watt bath, the stage, inner lead, and seal ring parts were 3.0 μm thick and 9.1 μm thick.
, 7.4 μm. It can be seen that when the above bath is used, nickel can be plated uniformly.

Ni塩として臭化ニッケル、電気伝導度塩としてスルフ
プミン酸ナトリウムを使用した場合も、ステージ部、イ
ンナーリード部、シールリング部のニッケルめっき厚は
3.4 μm 、4.8μm 、4.4 μmとなり上
記浴と同程度のバラツキであった。また得られたニッケ
ルめっき上に金めつきを施し、ダイ付は性、ワイヤーボ
ンディング性、耐熱性を調べたが何ら問題はなかった。
Even when nickel bromide is used as the Ni salt and sodium sulfupate is used as the electrical conductivity salt, the nickel plating thickness on the stage section, inner lead section, and seal ring section is 3.4 μm, 4.8 μm, and 4.4 μm. The variation was about the same as in the above bath. Further, gold plating was applied on the obtained nickel plating, and the die attachment properties, wire bonding properties, and heat resistance were examined, but no problems were found.

実施例3 実施例2の浴を用いPH4,0、浴温55℃、圧電時逆
電時の電流密度をそれぞれ3 A/d %とし、PR比
を10/2秒の条件で第2図のようなセラミックパッケ
ージに4μmねらいでランク法でニッケルめっきを施し
た。
Example 3 Using the bath of Example 2, the pH was 4.0, the bath temperature was 55°C, the current density during piezoelectric reverse current was 3 A/d%, and the PR ratio was 10/2 seconds as shown in Figure 2. Nickel plating was applied to a ceramic package with a thickness of 4 μm using the rank method.

ステージ部10、インナーリート部12、シールリング
部14のめっき厚はそれぞれ3.8μm、4.4 μm
 、4.1 μmと非電に均一につくことがわかった。
The plating thickness of the stage part 10, inner lead part 12, and seal ring part 14 is 3.8 μm and 4.4 μm, respectively.
, 4.1 μm, and was found to be uniformly non-electrostatic.

また得られたニッケルめっき」−に金めつきを施し、ダ
イ付は性、ワイヤーホンディング性、耐熱性等を調べた
が何ら問題点はなかった。また」1記条件でL CCに
ラック法でニッケルめっきを施したところ、スルーホー
ルの内と外のめっき厚は3.9 μm、と4.2μmで
ほぼ均一についていることがわかった。このニッケルめ
っき上に金めつきを施し、はんだ付は性を調べたところ
、ワット浴に比べかなり良好なはんだ漏れ性を示した。
In addition, the obtained nickel plating was gold plated, and its die attachment properties, wire bonding properties, heat resistance, etc. were examined, but no problems were found. Furthermore, when nickel plating was applied to the LCC using the rack method under the conditions described in item 1, it was found that the plating thickness on the inside and outside of the through hole was approximately uniform at 3.9 μm and 4.2 μm. When gold plating was applied to this nickel plating and the soldering properties were examined, it showed considerably better solder leakage than Watt bath.

(発明の効果) 以上のように本発明に係るめっき浴によれば、電解めっ
きで均一電着性に優れたニッケルめっきを施すことがで
きる。
(Effects of the Invention) As described above, according to the plating bath according to the present invention, nickel plating with excellent uniform electrodeposition can be performed by electrolytic plating.

また本発明のめっき方法によれば、より優れた均−電着
性を有するニッケルめっきを施すことができるという著
効を奏する。
Furthermore, the plating method of the present invention has the remarkable effect of being able to perform nickel plating with better uniformity of electrodeposition.

以上本発明につき好適な実施例を挙げて種々説明したが
、本発明はこの実施例に限定されるものではなく、発明
の精神を逸脱しない範囲内で多くの改変を施し得るのは
もちろんのことである。
Although the present invention has been variously explained above with reference to preferred embodiments, the present invention is not limited to these embodiments, and it goes without saying that many modifications can be made without departing from the spirit of the invention. It is.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はハルセル試験片のめっき膜厚測定点を示す説明
図、第2図は半導体装置用セラミックパッケージの平面
説明図を示す。 10・・・ステージ部、 12・・・インナーリード部
、  14・・・シールリング部。
FIG. 1 is an explanatory view showing measurement points of plating film thickness on a Hull cell test piece, and FIG. 2 is an explanatory plan view of a ceramic package for a semiconductor device. 10... Stage part, 12... Inner lead part, 14... Seal ring part.

Claims (1)

【特許請求の範囲】 1、ニッケル源および陽極溶解促進剤として塩化ニッケ
ル、臭化ニッケル等のハロゲン化ニッケル、もしくはニ
ッケル源として硫酸ニッケルまたはスルファミン酸ニッ
ケルと陽極溶解促進剤として塩化ナトリウム、臭化カリ
ウム等のハロゲン化物と、電気伝導度塩として硫酸、ス
ルファミン酸またはメタンスルホン酸のアルカリ塩と、
緩衝剤とを含む電解ニッケルめっき浴。 2、浴中の金属ニッケルの含有量が0.01M/l〜1
M/lである特許請求の範囲第1項記載の電解ニッケル
めっき浴。 3、浴中の金属ニッケルと電気伝導度塩とのモル比が1
:2以上である特許請求の範囲第1項または第2項記載
の電解ニッケルめっき浴。 4、緩衝剤としてホウ酸を用い、その含有量が0.1M
/l〜飽和である特許請求の範囲第1項、第2項または
第3項記載の電解ニッケルめっき浴。 5、ニッケル源および陽極溶解促進剤として塩化ニッケ
ル、臭化ニッケル等のハロゲン化ニッケル、もしくはニ
ッケル源として硫酸ニッケルまたはスルファミン酸ニッ
ケルと陽極溶解促進剤として塩化ナトリウム、臭化カリ
ウム等のハロゲン化物と、電気伝導度塩として硫酸、ス
ルファミン酸またはメタンスルホン酸のアルカリ塩と、
緩衝剤とを含む電解ニッケルめっき浴を用いて、PR法
によりめっきすることを特徴とする電解ニッケルめっき
方法。
[Claims] 1. Nickel halide such as nickel chloride or nickel bromide as a nickel source and anode dissolution promoter, or nickel sulfate or nickel sulfamate as a nickel source and sodium chloride or potassium bromide as an anode dissolution promoter halides such as, and an alkali salt of sulfuric acid, sulfamic acid or methanesulfonic acid as an electrically conductive salt,
An electrolytic nickel plating bath containing a buffering agent. 2. The content of metallic nickel in the bath is 0.01M/l to 1
The electrolytic nickel plating bath according to claim 1, wherein M/l. 3. The molar ratio of metallic nickel and electrical conductivity salt in the bath is 1.
The electrolytic nickel plating bath according to claim 1 or 2, wherein: 2 or more. 4. Using boric acid as a buffer, its content is 0.1M
The electrolytic nickel plating bath according to claim 1, 2 or 3, wherein the electrolytic nickel plating bath is from /l to saturation. 5. Nickel halide such as nickel chloride or nickel bromide as a nickel source and anode dissolution promoter, or nickel sulfate or nickel sulfamate as a nickel source and a halide such as sodium chloride or potassium bromide as an anode dissolution promoter; an alkali salt of sulfuric acid, sulfamic acid or methanesulfonic acid as an electrically conductive salt;
An electrolytic nickel plating method characterized by plating by the PR method using an electrolytic nickel plating bath containing a buffering agent.
JP22332486A 1986-09-20 1986-09-20 Nickel electroplating bath and plating method using the same Pending JPS6379991A (en)

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JP22332486A JPS6379991A (en) 1986-09-20 1986-09-20 Nickel electroplating bath and plating method using the same

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JP22332486A JPS6379991A (en) 1986-09-20 1986-09-20 Nickel electroplating bath and plating method using the same

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JPS6379991A true JPS6379991A (en) 1988-04-09

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7105082B2 (en) * 2003-02-27 2006-09-12 Novellus Systems, Inc. Composition and method for electrodeposition of metal on a work piece
CN105239112A (en) * 2015-11-03 2016-01-13 江苏梦得电镀化学品有限公司 Electroplating process for high-performance direct-plating nickel plating solutions
JP2016121377A (en) * 2014-12-24 2016-07-07 ローム・アンド・ハース・エレクトロニック・マテリアルズ・コリア・リミテッド Nickel plating solution

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57114650A (en) * 1980-12-30 1982-07-16 Nippon Steel Corp Production of zinc hot dipped steel plate of superior adhesive strength
JPS57200588A (en) * 1981-06-04 1982-12-08 Nec Corp Nickel plating solution

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57114650A (en) * 1980-12-30 1982-07-16 Nippon Steel Corp Production of zinc hot dipped steel plate of superior adhesive strength
JPS57200588A (en) * 1981-06-04 1982-12-08 Nec Corp Nickel plating solution

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7105082B2 (en) * 2003-02-27 2006-09-12 Novellus Systems, Inc. Composition and method for electrodeposition of metal on a work piece
JP2016121377A (en) * 2014-12-24 2016-07-07 ローム・アンド・ハース・エレクトロニック・マテリアルズ・コリア・リミテッド Nickel plating solution
CN105239112A (en) * 2015-11-03 2016-01-13 江苏梦得电镀化学品有限公司 Electroplating process for high-performance direct-plating nickel plating solutions

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