JPS6379333A - Fine wire of high-purity refined copper for semiconductor device - Google Patents
Fine wire of high-purity refined copper for semiconductor deviceInfo
- Publication number
- JPS6379333A JPS6379333A JP61224298A JP22429886A JPS6379333A JP S6379333 A JPS6379333 A JP S6379333A JP 61224298 A JP61224298 A JP 61224298A JP 22429886 A JP22429886 A JP 22429886A JP S6379333 A JPS6379333 A JP S6379333A
- Authority
- JP
- Japan
- Prior art keywords
- wire
- less
- bonding
- unavoidable impurities
- hardness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims description 31
- 229910052802 copper Inorganic materials 0.000 title claims description 29
- 239000010949 copper Substances 0.000 title claims description 29
- 239000004065 semiconductor Substances 0.000 title claims description 8
- 239000012535 impurity Substances 0.000 claims abstract description 23
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 11
- 229910052717 sulfur Inorganic materials 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 description 6
- 238000007670 refining Methods 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 238000005482 strain hardening Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910000831 Steel Inorganic materials 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000007667 floating Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 238000004857 zone melting Methods 0.000 description 2
- -1 Ag Burst Substances 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01014—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、半導体装置の製造に際して、ボンディング
ワイヤとして用いた場合に、ポールボンディング時のワ
イヤ先端部におけるボール部の硬さが相対的に低く、か
つボンディング時の変形に伴う加工硬化による硬さ上昇
が少ない高純度精製銅極細線に関するものである。[Detailed Description of the Invention] [Industrial Application Field] This invention provides a method for manufacturing semiconductor devices in which, when used as a bonding wire, the hardness of the ball portion at the tip of the wire during pole bonding is relatively low. The present invention also relates to a highly purified copper ultrafine wire that exhibits little increase in hardness due to work hardening due to deformation during bonding.
従来、一般に、半導体装置としてトランジスタやＩＣ１
さらにＬＳＩなどが知られているが、この中で、例えば
ＩＣの製造法の１つとして、（ａ） ｔず、リードフ
レーム素材として、板厚二０、１〜０．３ Ｕを有する
Ｃｕ合金条材を用意し、（ｂ） 上記リードフレーム
素材より、エツチングまたはプレス打抜き加工にて製造
せんとするＩＣの形状（（適合したリードフレームを形
成し、（Ｃ） ついで、上記リードフレームの所定個
所に、８１チツプを、Ａｇバーストなどの導電性樹脂を
用いて加熱接着するか、あるいは予め上記ｓ１チップお
よびリードフレームの片面に形成しておいたＡｕ、Ａｇ
、 Ｎｉ、 Ｃｕ、 またはこれらの合金で構成された
めつき層を介してはんだ付けするか、さらにＡｕろう付
けするかし、
（（１） 上記８１チツプと上記リードフレームとに
渡つて、ボンディングワイヤとして直径＝２０〜５０μ
ｍを有する全極細線を用いてボールボンディングを施し
、
（ｅ） 引続いて、上記の８１チツプ、ボンディング
ワイヤ、および８１チツプが取付けられた部分のリード
フレームを、これらを保護する目的で樹脂封止し、
ｉｆ） 最終的に、上記リードフレームにおける相互
に連なる部分を切除してＩＣを形成する、以上（ａＪ〜
（ｆ）の主要工程からなる方法が知られている。Conventionally, transistors and IC1s have generally been used as semiconductor devices.
Furthermore, LSI and the like are known, and among these, for example, as one of the manufacturing methods of IC, (a) t) Cu alloy having a plate thickness of 20.1 to 0.3 U is used as a lead frame material. Prepare a strip, (b) form a conforming lead frame into the shape of the IC to be manufactured by etching or press punching from the lead frame material, and (c) form a suitable lead frame at a predetermined location on the lead frame. Then, the 81 chip is heat-bonded using a conductive resin such as Ag Burst, or Au, Ag, which has been previously formed on one side of the s1 chip and the lead frame.
, Ni, Cu, or an alloy thereof, or by soldering with Au (1) As a bonding wire between the 81 chip and the lead frame. Diameter = 20~50μ
(e) Then, the 81 chip, the bonding wire, and the lead frame where the 81 chip is attached are sealed with resin for the purpose of protecting them. If) Finally, the interconnected parts of the lead frame are cut out to form an IC.
A method consisting of the main step (f) is known.
上記のように、半導体装置の製造には、ボンディングワ
イヤとして全極細線が用いられているが、近年、高価な
全極細線に代って安価な無酸素銅極細線が注目されるよ
うになっている。As mentioned above, all ultra-fine wires are used as bonding wires in the manufacture of semiconductor devices, but in recent years, inexpensive oxygen-free copper ultra-fine wires have been attracting attention as an alternative to expensive all-extra-fine wires. ing.
しかし、無酸素銅極細線を半導体装置のボンディングワ
イヤとして用いた場合、全極細線で通常採用されている
０、１５〜０．３秒に１回の高速ボールボンディングを
行なうと、ボンディング時にワイヤ先端部に形成された
ボール部によって、例えばＭ合金配線被膜が破壊された
り、時にはＳｉチップ自体にマイクロクラックが生じた
りするなどの問題点が発生し、高速ポールボンディング
を行なうことができないのが現状である。However, when oxygen-free copper ultrafine wire is used as a bonding wire for semiconductor devices, if high-speed ball bonding is performed once every 0.15 to 0.3 seconds, which is normally used for all ultrafine wires, the tip of the wire during bonding At present, high-speed pole bonding is not possible due to problems such as the ball part formed on the part, for example, destroying the M alloy wiring coating and sometimes causing microcracks in the Si chip itself. be.
そこで、本発明者等は、上述のような観点から、無酸素
銅極細線のもつ上記のような問題点を解決すべく研究を
行なった結果、
（１）全極細線では、高速でのワイヤボンディング時に
、ワイヤ先端部に形成されるボール部の硬さに、ボンデ
ィング前とボンディング後にあまり変化が見られないの
に対して、無酸素銅極細線では、前記ボール部の硬さが
相対的に高く、かつボンディング後に著しい硬さ上昇が
見られ、このワイヤボール部における硬さ上昇は、ボン
ディング時の変形に伴う加工硬化に原因し、これによっ
て８１チップ自体や、その表面に形成されている被膜が
損傷を受けるようになること。Therefore, from the above-mentioned viewpoints, the present inventors conducted research to solve the above-mentioned problems with oxygen-free copper ultrafine wires, and found that (1) All ultrafine wires are During bonding, there is not much change in the hardness of the ball formed at the tip of the wire before and after bonding, whereas with oxygen-free copper ultrafine wire, the hardness of the ball is relatively different. This increase in hardness at the wire ball portion is due to work hardening due to deformation during bonding, and this causes damage to the 81 chip itself and the coating formed on its surface. becomes damaged.
（２） このような無酸素銅極細線における高速での
ボールボンディング時に、ワイヤ先端部に形成されるボ
ール部の変形に伴う加工硬化は、通常、無酸素銅極細線
に含有する３０〜ｌ ＯＯｐｐｍの不可避不純物、特に
５〜ｌ Ｏｐｐｍ含有のＳ成分、および３〜８ ｐｐｍ
含有のＣ成分によってもたらされること。(2) During high-speed ball bonding of such an ultra-fine oxygen-free copper wire, work hardening due to deformation of the ball portion formed at the tip of the wire usually occurs due to the amount of 30 to 00ppm contained in the ultra-fine oxygen-free copper wire. unavoidable impurities, especially S component containing 5-1 Oppm and 3-8 ppm
This is brought about by the contained C component.
（３）シたがって、無酸素銅極細線に不可避不純物とし
て含有するＳおよびＣ成分の含有量を、それぞれ、
Ｓ：０．５ｐｐｍ以下、
Ｃ： １ｐｐｍ以下、
に低減すると共に、不可避不純物の全含有量を５ｐｐｍ
以下に低減した高純度精製銅極細線では、高速でのワイ
ヤボンディング時に、ワイヤ先端部に形成されるボール
部の硬さに、ボンディング前とボンディング後にあまシ
変化が見られず、この結果８１チツプやその表面のへ！
合金配線被膜が損傷を受けることがないこと。(3) Therefore, the contents of S and C components contained as inevitable impurities in the oxygen-free copper ultrafine wire are reduced to S: 0.5 ppm or less and C: 1 ppm or less, respectively, and all of the inevitable impurities are reduced. content 5ppm
With the ultra-fine high-purity refined copper wire reduced to below, during high-speed wire bonding, there was no noticeable change in the hardness of the ball formed at the tip of the wire before and after bonding, and as a result, 81 chips And to the surface!
The alloy wiring coating shall not be damaged.
（４）上記（３）項における不可避不純物の低減は、無
酸素銅より調整した再電解銅に、Ｓ成分を除去するだめ
の精製材として、 Ｌａ 、 Ｂａ、 Ｃａ、 Ｓｒ
、 Ｐｒ、Ｌｌ、Ｃｅ、Ｎａ、およびＭｇのうちの１種
または２種以上を、望ましくは３〜ｌ ＯＯｐｐｍの範
囲で含有させると共に、同時にＣを除去するだめの精製
材として、Ｚｒ、 Ｖ、Ｔｉ、Ｎｂ、およびＴａのうち
の１才重または２種以上を、望ましくは同じく３〜ｌ
ＯＯｐｐｍの範囲で含有させた精製材含有高純度銅を用
い、これに通常の浮遊帯域溶融精製法を施すことによっ
て可能となり、この結果ＳおよびＣ成分が硫化物および
炭化物などを形成して分離されることから、これら不可
避不純物としての８およびＣ成分の含有量がそれぞれ、
Ｓ ： ０．５ ｐｐｍ以下、
Ｃ： １ｐｐｍ以下、
となると共に、その他の不可避不純物であるＳｅ、Ｔｅ
、 Ｆｅ、 Ｎｉ、Ｃ０１Ｓｎ、、 Ａｓ、 Ｓｂ、お
よびＺｎなども精製除去されることから、不可避不純物
の全含有量が５ ｐｐｍ以下となること。(4) The reduction of unavoidable impurities in item (3) above involves adding La, Ba, Ca, Sr to the re-electrolyzed copper prepared from oxygen-free copper as a refining agent to remove the S component.
, Pr, Ll, Ce, Na, and Mg, preferably in a range of 3 to 1 OOppm, and at the same time as a purification material to remove C, Zr, V, One year old weight or two or more of Ti, Nb, and Ta, preferably in the same amount of 3 to 1
This is made possible by using high-purity copper containing refining materials in the range of OOppm and subjecting it to the normal floating zone melting refining method. As a result, the S and C components form sulfides and carbides and are separated. Therefore, the contents of 8 and C components as these unavoidable impurities are as follows: S: 0.5 ppm or less, C: 1 ppm or less, and other unavoidable impurities Se and Te.
, Fe, Ni, C01Sn, As, Sb, and Zn are also purified and removed, so the total content of unavoidable impurities is 5 ppm or less.
以上（１）〜（４）に示される知見を得たのである。The findings shown in (1) to (4) above were obtained.
この発明は、上記知見にもとづいてなされたものであっ
て、不可避不純物としてのＳおよびＣ成分の含有量を、
それぞれ、
Ｓ ： ０．５ ｐｐｍ以下、
Ｃ： ｌ ｐｐｍ以下、
とすると共に、不可避不純物の全含有量を５ ｐｐｍ以
下とした純度をもち、特に半導体装置のボンディングワ
イヤとして用いるのに適した高純度精製銅極細線に特徴
を有するものである。This invention was made based on the above knowledge, and the content of S and C components as inevitable impurities is
S: 0.5 ppm or less, C: 1 ppm or less, respectively, and the total content of unavoidable impurities is 5 ppm or less, and has a high purity particularly suitable for use as a bonding wire for semiconductor devices. It is characterized by refined copper ultra-fine wire.
なお、この発明の高純度精製銅極細線における不可避不
純物としてのＳおよびＣ成分の上限値、並びに不可避不
純物の全含有量の上限値は、上記のように経験的に定め
たものであり、いずれの場合もこれらの上限値を越える
と、従来無酸素銅極細線に発生していた問題点の発生を
避けることができなくなるものです。Note that the upper limit values of S and C components as unavoidable impurities in the high-purity refined copper ultrafine wire of this invention and the upper limit value of the total content of unavoidable impurities are determined empirically as described above. In the case of , if these upper limits are exceeded, the problems that previously occurred with ultrafine oxygen-free copper wires cannot be avoided.
つぎに、この発明の高純度精製銅極細線を実施例によシ
具体的に説明する。Next, the high-purity refined copper ultrafine wire of the present invention will be specifically explained using examples.
まず、不可避不純物としてのＳおよびＣ成分の含有量が
、それぞれＳ： ６ｐｐｍ、 Ｃ：５ｐｐｍにして、不
可避不純物の全含有量が３１ ｐｐｍの無酸素銅を用意
し、この無酸素銅に再電解を施して、Ｓ： ｌ ｐｐｍ
、 Ｃ： ４ ｐＩ）ｍ、および不可避不純物全含有
量： １２ ｐｐｍとした再電解銅を調製し、ついで、
この再電解銅を、真空溶解炉で溶解し、これにそれぞれ
第１表に示される割合で精製材を含有させた精製材含有
高純度銅を溶製し、直径＝２０、口×長さ：２５０朋の
寸法をもったインゴットに鋳造し、このインゴットに対
して、それぞれ真空中で４回の浮遊帯域溶融精製を施し
て、同じく第１表に示される純度をもった高純度精製鋼
とし、引続いて、この高純度精製鋼インゴットに両端部
の切除と面側を行なって、直径：１５ｕＸ長さ１１００
間の寸法とした状態で、通常の条件で熱間および冷間圧
延、さらに線引加工を行なって、いずれも直径：２５μ
ｍを有する本発明高純度精製銅極細線１−２８をそれぞ
れ製造した。First, the contents of S and C components as unavoidable impurities are set to S: 6 ppm and C: 5 ppm, respectively, and oxygen-free copper with a total unavoidable impurity content of 31 ppm is prepared, and this oxygen-free copper is re-electrolyzed. S: l ppm
, C: 4 pI)m, and total unavoidable impurity content: 12 ppm, and then,
This re-electrolyzed copper was melted in a vacuum melting furnace, and high-purity copper containing refining materials was melted by adding refining materials in the proportions shown in Table 1. Diameter = 20, mouth x length: Cast into ingots having a size of 250mm, each ingot is subjected to floating zone melting and refining four times in a vacuum to produce high-purity refined steel with a purity also shown in Table 1, Subsequently, both ends of this high-purity refined steel ingot were cut and the face side was cut to a diameter of 15u x length of 1100mm.
With the dimensions between
High-purity refined copper ultrafine wires 1-28 of the present invention having a diameter of m were manufactured, respectively.
また、比較の目的で、上記の無酸素銅および再電解銅か
ら同一の条件で、それぞれ無酸素銅極細線および再電解
銅極細線を製造した。Further, for the purpose of comparison, an oxygen-free copper extra-fine wire and a re-electrolyzed copper extra-fine wire were produced from the above-mentioned oxygen-free copper and re-electrolyzed copper under the same conditions, respectively.
ついで、この結果得られた各種の極細線をボンディング
ワイヤとして用い、Ｍ合金配線被膜を有するＳ１チツプ
に０．１５秒／回の高速でポールボンディングを行ない
、ワイヤ先端部に形成されたボール部のボンディング前
とボンディング後の断面硬さをビッカース硬さにて測定
すると共に、１万回のボンディングで前記被膜に発生し
た損傷回数を測定した。Next, using the various ultrafine wires obtained as bonding wires, pole bonding was performed at a high speed of 0.15 seconds/time to an S1 chip having an M alloy wiring film, so that the ball portion formed at the tip of the wire The cross-sectional hardness before and after bonding was measured using Vickers hardness, and the number of times the film was damaged during 10,000 bonding cycles was also measured.
なお、上記ボール部の断面硬さは、ボール部を無歪切断
してエツチングした状態のものを超微小マイクロビッカ
ース硬度計（（て測定した。The cross-sectional hardness of the ball portion was measured using an ultra-fine micro Vickers hardness meter (()) after cutting and etching the ball portion without strain.
第１表に示される結果から、本発明高純度精製銅極細線
１〜２８においては、不可避不純物としてのＳおよびＣ
成分の含有量が、それぞれＳ：Ｏ５ｐｐｍ以下、Ｃ二１
ｐｐｍ以下と低く、かつ不可避不純物の全含有量も５
ｐｐｍ以下と低いので、ワイヤ先端部に形成されるボー
ル部の硬さが相対的に低く、かつポールボンディング前
後におけるボール部の硬さ変化も少なく、この結果高速
でのポールボンディングに際して、８１チツプの表面部
を傷つけることがほとんどないのに対して、無酸素銅極
細線や再電解銅極細線では、不可避不純物、特にＳおよ
びＣ成分の含有量が高いために、ボール部のボンディン
グ後の加工硬化がはげしく、Ｓ１チツプ表面の損傷が著
しいことが明らかである。From the results shown in Table 1, in the high-purity refined copper ultrafine wires 1 to 28 of the present invention, S and C are unavoidable impurities.
The content of the components is S:O5ppm or less, C21, respectively.
Low at less than ppm, and the total content of unavoidable impurities is 5.
ppm or less, the hardness of the ball formed at the tip of the wire is relatively low, and there is little change in the hardness of the ball before and after pole bonding.As a result, during high-speed pole bonding, the hardness of the 81 chip While the surface part is hardly damaged, oxygen-free copper ultrafine wire and re-electrolyzed copper ultrafine wire have a high content of unavoidable impurities, especially S and C components, which causes work hardening of the ball part after bonding. It is clear that the surface of the S1 chip is severely damaged.
上述のように、この発明の高純度精製銅極細線は、これ
を半導体装置のボンディングワイヤとして用いた場合、
高速でのポールボンディングに際して８１チツプの表面
を損傷することがほとんどなく、金種細線に代るボンデ
ィングワイヤとして工業上有用な特性をもつのである。As mentioned above, when the high-purity refined copper ultrafine wire of the present invention is used as a bonding wire for a semiconductor device,
There is almost no damage to the surface of the 81 chip during high-speed pole bonding, making it industrially useful as a bonding wire that can replace fine wire.
Claims (1)
ぞれ、 Ｓ：０．５ｐｐｍ以下、 Ｃ：１ｐｐｍ以下、 とすると共に、不可避不純物の全含有量を５ｐｐｍ以下
とした純度をもつことを特徴とする半導体装置用高純度
精製銅極細線。[Claims] The content of S and C components as unavoidable impurities is respectively S: 0.5 ppm or less and C: 1 ppm or less, and the purity is such that the total content of unavoidable impurities is 5 ppm or less. High-purity refined copper ultrafine wire for semiconductor devices, which is characterized by having
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61224298A JPH0744196B2 (en) | 1986-09-22 | 1986-09-22 | High-purity refined copper ultrafine wire for semiconductor devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61224298A JPH0744196B2 (en) | 1986-09-22 | 1986-09-22 | High-purity refined copper ultrafine wire for semiconductor devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6379333A true JPS6379333A (en) | 1988-04-09 |
| JPH0744196B2 JPH0744196B2 (en) | 1995-05-15 |
Family
ID=16811581
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61224298A Expired - Lifetime JPH0744196B2 (en) | 1986-09-22 | 1986-09-22 | High-purity refined copper ultrafine wire for semiconductor devices |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0744196B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009007049A (en) * | 2007-06-29 | 2009-01-15 | Daifuku Co Ltd | Freely foldable pallet for loading and unloading |
-
1986
- 1986-09-22 JP JP61224298A patent/JPH0744196B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009007049A (en) * | 2007-06-29 | 2009-01-15 | Daifuku Co Ltd | Freely foldable pallet for loading and unloading |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0744196B2 (en) | 1995-05-15 |
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