JPS637637A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS637637A JPS637637A JP61150674A JP15067486A JPS637637A JP S637637 A JPS637637 A JP S637637A JP 61150674 A JP61150674 A JP 61150674A JP 15067486 A JP15067486 A JP 15067486A JP S637637 A JPS637637 A JP S637637A
- Authority
- JP
- Japan
- Prior art keywords
- mold
- molding
- chip
- primary
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 6
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 238000000465 moulding Methods 0.000 claims abstract description 17
- 239000011347 resin Substances 0.000 claims abstract description 16
- 229920005989 resin Polymers 0.000 claims abstract description 16
- 239000007789 gas Substances 0.000 claims abstract description 5
- 239000001257 hydrogen Substances 0.000 claims abstract description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 5
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims abstract 3
- 239000006082 mold release agent Substances 0.000 claims description 9
- 238000001721 transfer moulding Methods 0.000 claims 1
- 238000009413 insulation Methods 0.000 abstract description 5
- 230000006866 deterioration Effects 0.000 abstract description 3
- 239000003795 chemical substances by application Substances 0.000 abstract 4
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
Landscapes
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、例えばホトカプラのようなダブルトランス
ファーモールドの半導体装置の製造方法に関し、特にそ
の一次モールドと二次モールドの密着性の向上に係るも
のである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a method for manufacturing a double transfer mold semiconductor device such as a photocoupler, and in particular to improving the adhesion between a primary mold and a secondary mold. It is.
第１図にダブルトランスファーモールドの半導体装置の
一つのホトカプラの一例の構造を示す。FIG. 1 shows the structure of one example of a photocoupler for a double transfer mold semiconductor device.
図において１は外部リード、２は発光ダイオードのチッ
プ、３はホトトランジスタのチップ、・２はリード線、
５は光を透過する樹脂による一次モールド部、６は光を
透過しな−例えば黒色樹脂による二次モールド部である
。In the figure, 1 is an external lead, 2 is a light emitting diode chip, 3 is a phototransistor chip, and 2 is a lead wire.
Reference numeral 5 denotes a primary molded portion made of resin that transmits light, and 6 denotes a secondary molded portion made of black resin that does not transmit light.
上記構造のホトカプラは下記のようにして製造される。The photocoupler having the above structure is manufactured as follows.
発光ダイオードのチッｆ２とホトトランジスタのチップ
３をそれぞれリードフレームにマウントし、各チッｆ２
，３の電極バットをそれぞれ所定のリードにリード線４
で接続し、発光ダイオードのチップ２とホトトランジス
タ３のチッｆ３が所定の状態に対峙するようにそれぞれ
のリードフレームを保持して、透明樹脂による一次モー
ルド５を行い、一次モールド５表面周囲に黒色樹脂てよ
る二次モールド６を行う。The light emitting diode chip f2 and the phototransistor chip 3 are each mounted on a lead frame, and each chip f2
, 3 to the respective predetermined leads with lead wire 4.
Hold each lead frame so that the light emitting diode chip 2 and the phototransistor chip f3 face each other in a predetermined state, and perform primary molding 5 with transparent resin. Secondary molding 6 is performed using resin.
モールド終了後、リードフレームの不要部分をプレス切
断によって除去し、残った外部リード１を所定の形状に
整形する。After molding is completed, unnecessary portions of the lead frame are removed by press cutting, and the remaining external leads 1 are shaped into a predetermined shape.
樹脂モールドには金型が使用されるが、金型内に充填し
た樹脂を冷却固化後容易に樹脂から離すことができるよ
うに、通常、樹脂に含まれる離型剤や事前に金型内面に
ワックスなどの離型剤を塗る事で対応している。A mold is used for resin molding, but in order to make it easier to separate the resin filled into the mold from the resin after it cools and solidifies, a mold release agent contained in the resin or a mold release agent is usually added to the inside of the mold in advance. This can be done by applying a mold release agent such as wax.
従来は、一次モールド後、モールド樹脂表面の離型剤を
除去するために、表面を洗浄してから、二次モールドを
行なっていた。Conventionally, after primary molding, the surface of the mold resin was washed to remove the mold release agent, and then secondary molding was performed.
従来の方法では、離型剤が完全に除去されずに残り、一
次モールド５と二次モールド６間の密着性が悪くなシ、
接着部に生成された間隙で空気中放電を起こし絶縁耐圧
が低下したり湿気が浸入し、電極間の絶縁が低下すると
いう問題があった。In the conventional method, the mold release agent is not completely removed and remains, resulting in poor adhesion between the primary mold 5 and the secondary mold 6.
There were problems in that air discharge occurred in the gap created in the bonded part, resulting in a drop in dielectric strength, and moisture infiltrated, resulting in a drop in the insulation between the electrodes.
この発明は、上記問題を解消するためになされたもので
、二次モールドが一次モールドに密に接着し、絶縁耐圧
性耐湿性のよいものが得られる製造方法を提供すること
を目的とする。The present invention was made to solve the above problems, and an object of the present invention is to provide a manufacturing method in which a secondary mold is tightly adhered to a primary mold, and a product having good dielectric strength and moisture resistance can be obtained.
〔問題点を解決するための手段〕
この発明の方法は、上記目的を達成するために、一次モ
ールド後にモールド樹脂表面の離型剤を水素、酸水素等
のガス炎により瞬時に燃焼させて除去した後に二次モー
ルドを行うこととしたものである。[Means for Solving the Problems] In order to achieve the above object, the method of the present invention removes the mold release agent on the surface of the mold resin by instantly burning it with a gas flame such as hydrogen or oxyhydrogen after primary molding. After that, it was decided to carry out secondary molding.
それぞれ発光ダイオードのチップ２とホトトランジスタ
のチップ３をマウントしたリードフレームを、核発光ダ
イオードのチツｆ２とホトトランジスタのチップ３が所
定の状態に対峙するように保持して、透明樹脂による一
次モールド５を行った後、モールド樹脂表面を水素、酸
水素等のガス炎で焼き、表面に付着している離型剤を燃
焼させて回去する。A lead frame with a light emitting diode chip 2 and a phototransistor chip 3 mounted thereon is held so that the nuclear light emitting diode chip f2 and the phototransistor chip 3 face each other in a predetermined position, and a primary mold 5 made of transparent resin is molded. After performing this, the surface of the mold resin is burned with a gas flame of hydrogen, oxyhydrogen, etc., and the mold release agent adhering to the surface is burned and removed.
離型剤などが完全に除去された清浄な一次モールド表面
に二次モールドすると、二次モールドが一次モールドに
密着し、空気中放電や接着１面を通って湿気が内部に浸
入することがなくなシ、電極間の絶縁低下を招く恐れが
なくなる。When secondary molding is performed on a clean primary mold surface from which mold release agents have been completely removed, the secondary mold adheres closely to the primary mold, preventing air discharge and moisture from penetrating into the interior through the adhesive surface. This eliminates the risk of deteriorating the insulation between the electrodes.
上記には、実施例としてホトカプラを示したが、ダブル
トランスファーモールドの半導体装置全般に適用できる
ことは勿論である。Although a photocoupler is shown as an example above, it goes without saying that the present invention can be applied to all double transfer mold semiconductor devices.
以上のとおり、この発明によれば、一次モールドと二次
モールドの密着が可能となシ空気中放電や接着界面を通
っての湿気の浸入がなくなシ、湿気のモールド内への浸
入による電極間絶縁の低下がなくなり、信頼性が向上す
るという効果がある。As described above, according to the present invention, the primary mold and the secondary mold can be brought into close contact with each other, there is no discharge in the air or moisture infiltration through the adhesive interface, and there is no possibility of moisture intrusion into the electrodes due to moisture intrusion into the mold. This has the effect of eliminating deterioration in insulation between layers and improving reliability.
第１図はダブルトランスファーモールドの半導体装置の
一つのホトカプラの一例の構造を示す断面図である。
１・・・外部リード、２・・・発光ダイオードのチップ
。
３・・・ホトトランジスタのチップ、４・・・リード線
、５・・・一次モールド部、６・・・二次モールド部。
特許出願人 新日本無線株式会社
第１図FIG. 1 is a sectional view showing the structure of one example of a photocoupler of a double transfer mold semiconductor device. 1... External lead, 2... Light emitting diode chip. 3... Phototransistor chip, 4... Lead wire, 5... Primary mold part, 6... Secondary mold part. Patent applicant New Japan Radio Co., Ltd. Figure 1
Claims (1)
法において、一次モールド後にモールド樹脂表面の離型
剤を水素、酸水素等のガス炎により燃焼させて除去した
後に二次モールドを行うことを特徴とする半導体装置の
製造方法。A semiconductor device manufacturing method using double transfer molding, characterized in that after primary molding, the mold release agent on the surface of the mold resin is removed by burning with a gas flame of hydrogen, oxyhydrogen, etc., and then secondary molding is performed. Production method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15067486A JPH0712047B2 (en) | 1986-06-28 | 1986-06-28 | Method for manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15067486A JPH0712047B2 (en) | 1986-06-28 | 1986-06-28 | Method for manufacturing semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS637637A true JPS637637A (en) | 1988-01-13 |
| JPH0712047B2 JPH0712047B2 (en) | 1995-02-08 |
Family
ID=15501993
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15067486A Expired - Lifetime JPH0712047B2 (en) | 1986-06-28 | 1986-06-28 | Method for manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0712047B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5698899A (en) * | 1995-11-30 | 1997-12-16 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device with first and second sealing resins |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60153133A (en) * | 1984-01-20 | 1985-08-12 | Rohm Co Ltd | Method for removing burr of molded part in electronic parts |
-
1986
- 1986-06-28 JP JP15067486A patent/JPH0712047B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60153133A (en) * | 1984-01-20 | 1985-08-12 | Rohm Co Ltd | Method for removing burr of molded part in electronic parts |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5698899A (en) * | 1995-11-30 | 1997-12-16 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device with first and second sealing resins |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0712047B2 (en) | 1995-02-08 |
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