JPS60153133A - Method for removing burr of molded part in electronic parts - Google Patents
Method for removing burr of molded part in electronic partsInfo
- Publication number
- JPS60153133A JPS60153133A JP933984A JP933984A JPS60153133A JP S60153133 A JPS60153133 A JP S60153133A JP 933984 A JP933984 A JP 933984A JP 933984 A JP933984 A JP 933984A JP S60153133 A JPS60153133 A JP S60153133A
- Authority
- JP
- Japan
- Prior art keywords
- molded part
- burr
- hydrogen
- mold part
- air
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 11
- 239000001257 hydrogen Substances 0.000 claims abstract description 14
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 14
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 13
- 238000000465 moulding Methods 0.000 claims abstract description 9
- 238000005507 spraying Methods 0.000 claims description 3
- 238000007664 blowing Methods 0.000 abstract description 7
- 239000010409 thin film Substances 0.000 abstract 2
- 238000002485 combustion reaction Methods 0.000 abstract 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 abstract 1
- 229920003002 synthetic resin Polymers 0.000 description 5
- 239000000057 synthetic resin Substances 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000428 dust Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- UCHOFYCGAZVYGZ-UHFFFAOYSA-N gold lead Chemical compound [Au].[Pb] UCHOFYCGAZVYGZ-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000004071 soot Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、トランジスター、ダイオード又はＩＣ等のよ
うに合成樹脂のモールド部を有する電子部品の製造に際
して、前記モールド部の成形時に発生するばりを除去す
る方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for removing burrs generated during molding of a synthetic resin molded part when manufacturing an electronic component such as a transistor, diode, or IC having a molded part of synthetic resin. .
一般にトランジスターは、薄い金属板から第１図に示す
ように、一つのトランジスターを構成するベースリード
片２、エミッタリード片３及びコレクタリード片４とを
一定の間隔（Ｐ）で多数個・ 連接して成るリードフレ
ーム１を打ち抜き、該リードフレーム１におりる各ペー
スリード片２の先端部に半導体チップをグイボンデング
し、次いで尤の半導体チップとエミッタリード片３及び
コレクタリード片４とを極（細い金線にてワイヤーボン
デングしたのち、各リード片対２，３．４の先端部にお
ける半導体チップ及び金線部分を、成形金型内での合成
樹脂の成形によるモールド部５で第２図に示すように密
封し、そして、リードフレームｌにおける各リード片対
２．３．４の相互間の連接を第３図に示すように切断す
ることにより、製品トランジスター６にするようにして
製造していることば周知の通りである。Generally, a transistor is made by connecting a large number of base lead pieces 2, emitter lead pieces 3, and collector lead pieces 4, which constitute one transistor, at regular intervals (P), as shown in Figure 1, from thin metal plates. A lead frame 1 made up of After wire bonding with gold wire, the semiconductor chip and the gold wire portion at the tip of each pair of lead pieces 2, 3.4 are molded with synthetic resin in a molding die as shown in Fig. 2. The product transistor 6 is manufactured by sealing as shown and cutting the connection between each pair of lead pieces 2.3.4 in the lead frame l as shown in FIG. As the saying goes, it is well known.
この製造中における合成樹脂によるモールド部５の成形
に際して、該モールド部５の周囲には、成形金型の合せ
面部に極く薄いフィルム状のぼりが発生する。このぼり
は、前記第３図における切断時に除去されるが、完全に
除去されるものでな（一部のぼりがモールド部５に残る
ことになり、この残ったばりがモールド部５に４１いた
まま次の工程に移行してその工程中において脱落するの
で機械系及び電気系のトラブシレの原因になり、特にモ
ールド部５の表面に製品名や仕様の標印を捺印する工程
では、その捺印ローラにモールド部５から脱落したぼり
片が付着することによって、捺印の不良を多発するので
ある。しかも、モールド部５の成形時に発生するぼりは
、極く薄いフィルム状で且つ弾力性を有するので、これ
を刃物で完全に切断除去することは著しく困難であるば
かりか、一つの電子部品におけるばりを一個づづ除去す
るにはコストが嵩むのである。When the mold part 5 is molded with synthetic resin during this manufacturing process, an extremely thin film-like bulge is generated around the mold part 5 on the mating surface of the molding die. Although this burr is removed during cutting in FIG. 3, it is not completely removed (a portion of the burr remains in the mold part 5, As it moves to the next process and falls off during that process, it can cause trouble in the mechanical and electrical systems.Especially in the process of stamping the product name and specification marks on the surface of the mold part 5, the marking roller The adhesion of flakes that have fallen off from the mold part 5 often result in defective markings.Furthermore, the flakes that are generated during molding of the mold part 5 are extremely thin film-like and have elasticity. Not only is it extremely difficult to completely remove burrs with a knife, but it is also expensive to remove burrs one by one from an electronic component.
本発明は、電子部品におけるモールド部の成形時に発生
する極く薄いフィルム状のぼりを２．刃物等によること
なく除去する方法を提供するもので、その要旨とする所
は、電子部品によ丹ノるモールド部に、当該モールド部
の成形後において水素火炎を吹きイ１しノたのち、空気
を吹きイ【１りることにある。The present invention aims to eliminate extremely thin film-like run-up that occurs during molding of electronic parts. This method provides a method for removing the parts without using a knife or the like, and the gist of the method is to blow a hydrogen flame onto the molded part of the electronic component after the molded part has been formed, and then, It's about blowing the air.
すなわち、前記第２図に示すよ・うにしてモールド部５
の成形の終わったリードフレーム１を矢印（Ａ）の方向
に一定の速度で移送する途中において、そのモールド部
５に第４図及び第５図に示す゛ ように水素トーチノズ
ル７からの火炎を吹き付＆、するのである。すると、前
記そ−ルド部５の周囲に形成されている極く薄いフィル
ム状のぼりは、水素火炎によって燃焼によって焼失する
が炭化し−で極めて脆い状態になるから、次に、前記水
素１−一ヂノズル７ ｌｌ７ｉＩ所よりリードフし一一
ノ、１の移送方向に適宜距離（Ｌ）だけ前方の位置にお
いて空気噴出ノズル８によって空気を吹き（（Ｉけるこ
とにより、前記ばりの炭化物は、モールド部５から吹き
飛ばし除去されるのである（この場合、１１；１記空気
噴出ノズル６に対向する位置に貫空吸引ノズル９を設り
ると、前記炭化物の除゛去効率がより向上すると共に、
炭化物の飛散による作業環境の悪化を防止できる）。That is, the mold part 5 is formed as shown in FIG.
While the molded lead frame 1 is being transported at a constant speed in the direction of arrow (A), the mold part 5 is blown with flame from the hydrogen torch nozzle 7 as shown in FIGS. 4 and 5. Attach &, do. Then, the extremely thin film-like stream formed around the solder portion 5 is burnt out by the hydrogen flame, but becomes carbonized and becomes extremely brittle. By blowing air from the air jet nozzle 8 at a position a suitable distance (L) in front of the lead-off position in the transfer direction of the mold part 5, the carbide of the burr is removed from the mold part 5. (In this case, if a through-air suction nozzle 9 is provided at a position opposite to the air jet nozzle 6 described in 11.1, the removal efficiency of the carbide will be further improved, and
This prevents deterioration of the working environment due to scattering of carbides).
ここに水素火炎を用いたのは、水素ガスはクリーンでそ
の燃焼に煤及び有害ガスの発生がないからであり、この
水素火炎の吹き付りは極く短時間で良いから、モールｌ
゛一部５内の半導体チップ、金線及びリード片２． ３
． ４に対する熱的な悪影響はない。また前記水素火炎
の吹きｆ＝ｔ ＆：ｌ及びこれに続く空気の吹きイづげ
によって、前記モールド部５の表面に何着しているごみ
も同時に除去されるのである。The hydrogen flame was used here because hydrogen gas is clean and does not generate soot or harmful gases when burned, and the spraying of this hydrogen flame only takes a very short time.
゛Semiconductor chip, gold wire and lead piece in part 5 2. 3
．． There is no adverse thermal effect on 4. Moreover, by blowing f=t &:l of the hydrogen flame and subsequently blowing air, any dust deposited on the surface of the mold part 5 is removed at the same time.
なお、上記実施例はトランジスターの場合について説明
したが、本発明はこれに限らず合成樹脂のモールド部を
有するダイオード又はＩＣ等の他の電子部品におけるぼ
り取りにも同様に適用できることは言うまでもない。Although the above embodiments have been described with reference to transistors, it goes without saying that the present invention is not limited to this and can be similarly applied to other electronic components such as diodes or ICs having synthetic resin molded parts.
以上の通り本発明によれば、電子部品のモール１′部の
周囲におりるばりを、刃物によることなく水素火炎と空
気との吹き付けによって至極簡単に除去できると共に、
モールド部の表面のごみをも同時に除去できるから、次
の工程においてぼり及びごみが、機械系及び電気系に対
するｌ・ラブルの原因にならないばかり°か、標印工程
においてはぼり及びごみによって捺印不良を生しること
を防止できるのであり、しかも、クリーンな水素火炎を
使用するため作業環境に悪化がなく、且つぼり取りに要
するコストを著しく低減できる効果を有する。As described above, according to the present invention, the burrs surrounding the molding 1' of the electronic component can be removed very easily by blowing hydrogen flame and air without using a knife, and
Since dust on the surface of the mold part can be removed at the same time, not only will the debris and debris not cause problems with the mechanical and electrical systems in the next process, but also will prevent marking defects due to the debris and debris in the marking process. Moreover, since a clean hydrogen flame is used, the working environment is not deteriorated, and the cost required for scraping can be significantly reduced.
第１図、第２図及び第３図はトランジスターの製造工程
を示す図、第４図は本発明の実施例を示す正面図、第５
図は第４図の平面図である。
１・・・・リードフレーム、２，３．４・・・ リー
ド片、５・・・・モールド部、６・・・・トランジスタ
ー、７・・・・水素トーチノズル、８・・・・空気噴出
ノズル。
特許出願人 ローム 株式会社
第４図1, 2, and 3 are diagrams showing the manufacturing process of a transistor, FIG. 4 is a front view showing an embodiment of the present invention, and FIG.
The figure is a plan view of FIG. 4. 1...Lead frame, 2,3.4...Lee
5...Mold part, 6...Transistor, 7...Hydrogen torch nozzle, 8...Air jet nozzle. Patent applicant: ROHM Co., Ltd. Figure 4
Claims (1)
部の成形後において水素火炎を吹き付けたのち、空気を
吹き付けることを特徴とする電子部品におけるモールド
部のぼり取り方法。(1) A method for removing a mold part of an electronic component, which comprises spraying a hydrogen flame onto the mold part of the electronic component after molding the mold part, and then spraying air onto the mold part.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP933984A JPS60153133A (en) | 1984-01-20 | 1984-01-20 | Method for removing burr of molded part in electronic parts |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP933984A JPS60153133A (en) | 1984-01-20 | 1984-01-20 | Method for removing burr of molded part in electronic parts |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60153133A true JPS60153133A (en) | 1985-08-12 |
| JPH0149016B2 JPH0149016B2 (en) | 1989-10-23 |
Family
ID=11717709
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP933984A Granted JPS60153133A (en) | 1984-01-20 | 1984-01-20 | Method for removing burr of molded part in electronic parts |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60153133A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS637637A (en) * | 1986-06-28 | 1988-01-13 | New Japan Radio Co Ltd | Manufacture of semiconductor device |
| JPH0271535A (en) * | 1988-05-12 | 1990-03-12 | Sanken Electric Co Ltd | Removal of resin burr of resin-sealed electronic component |
| US5075255A (en) * | 1991-02-27 | 1991-12-24 | Motorola, Inc. | Method of removing contaminants from a plated article with a clean burning hydrogen flame |
-
1984
- 1984-01-20 JP JP933984A patent/JPS60153133A/en active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS637637A (en) * | 1986-06-28 | 1988-01-13 | New Japan Radio Co Ltd | Manufacture of semiconductor device |
| JPH0271535A (en) * | 1988-05-12 | 1990-03-12 | Sanken Electric Co Ltd | Removal of resin burr of resin-sealed electronic component |
| US5075255A (en) * | 1991-02-27 | 1991-12-24 | Motorola, Inc. | Method of removing contaminants from a plated article with a clean burning hydrogen flame |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0149016B2 (en) | 1989-10-23 |
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