JPS6376325A - X線リソグラフィ−用マスクのx線吸収体膜 - Google Patents
X線リソグラフィ−用マスクのx線吸収体膜Info
- Publication number
- JPS6376325A JPS6376325A JP62162670A JP16267087A JPS6376325A JP S6376325 A JPS6376325 A JP S6376325A JP 62162670 A JP62162670 A JP 62162670A JP 16267087 A JP16267087 A JP 16267087A JP S6376325 A JPS6376325 A JP S6376325A
- Authority
- JP
- Japan
- Prior art keywords
- film
- ray
- stress
- sputtering
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000006096 absorbing agent Substances 0.000 title claims abstract description 19
- 238000001015 X-ray lithography Methods 0.000 title claims abstract description 9
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 25
- 239000010937 tungsten Substances 0.000 claims abstract description 23
- -1 tungsten nitride Chemical class 0.000 claims abstract description 15
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims abstract description 14
- 238000004544 sputter deposition Methods 0.000 abstract description 23
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 12
- 238000000151 deposition Methods 0.000 abstract description 12
- 239000007789 gas Substances 0.000 abstract description 12
- 230000008021 deposition Effects 0.000 abstract description 10
- 238000000034 method Methods 0.000 abstract description 9
- 229910052715 tantalum Inorganic materials 0.000 abstract description 9
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract description 8
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 abstract description 7
- 239000000758 substrate Substances 0.000 abstract description 5
- 229910001873 dinitrogen Inorganic materials 0.000 abstract description 2
- 238000009713 electroplating Methods 0.000 abstract description 2
- 238000005546 reactive sputtering Methods 0.000 abstract description 2
- 239000000463 material Substances 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 description 14
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 12
- 150000002500 ions Chemical class 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 238000000137 annealing Methods 0.000 description 7
- 229910052786 argon Inorganic materials 0.000 description 6
- 239000012528 membrane Substances 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 230000001133 acceleration Effects 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229910004205 SiNX Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000001552 radio frequency sputter deposition Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 101100459261 Cyprinus carpio mycb gene Proteins 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000005300 metallic glass Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000005469 synchrotron radiation Effects 0.000 description 1
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62162670A JPS6376325A (ja) | 1987-06-30 | 1987-06-30 | X線リソグラフィ−用マスクのx線吸収体膜 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62162670A JPS6376325A (ja) | 1987-06-30 | 1987-06-30 | X線リソグラフィ−用マスクのx線吸収体膜 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP21791486A Division JPS6376872A (ja) | 1986-09-18 | 1986-09-18 | 膜の内部圧縮応力低減方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6376325A true JPS6376325A (ja) | 1988-04-06 |
JPH0255934B2 JPH0255934B2 (enrdf_load_html_response) | 1990-11-28 |
Family
ID=15759052
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62162670A Granted JPS6376325A (ja) | 1987-06-30 | 1987-06-30 | X線リソグラフィ−用マスクのx線吸収体膜 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6376325A (enrdf_load_html_response) |
Cited By (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0316116A (ja) * | 1989-03-09 | 1991-01-24 | Canon Inc | X線リソグラフィー用マスク構造体及びそれを用いたx線露光方法 |
US5188706A (en) * | 1989-03-18 | 1993-02-23 | Kabushiki Kaisha Toshiba | Method of manufacturing an x-ray exposure mask and device for controlling the internal stress of thin films |
US5196283A (en) * | 1989-03-09 | 1993-03-23 | Canon Kabushiki Kaisha | X-ray mask structure, and x-ray exposure process |
DE4316114A1 (de) * | 1992-06-08 | 1993-12-09 | Mitsubishi Electric Corp | Röntgenstrahlen-Maske und Verfahren zu ihrer Herstellung |
US5741626A (en) * | 1996-04-15 | 1998-04-21 | Motorola, Inc. | Method for forming a dielectric tantalum nitride layer as an anti-reflective coating (ARC) |
KR100249209B1 (ko) * | 1997-04-24 | 2000-03-15 | 구자홍 | 엑스-레이(X-ray) 마스크의 흡수체 및 그 제조방법 |
JP2009123852A (ja) * | 2007-11-14 | 2009-06-04 | Dainippon Printing Co Ltd | 半導体装置及びその製造方法 |
WO2020132391A1 (en) * | 2018-12-21 | 2020-06-25 | Applied Materials, Inc. | Extreme ultraviolet mask absorber and processes for manufacture |
US11209727B2 (en) | 2018-10-26 | 2021-12-28 | Applied Materials, Inc. | Ta—Cu alloy material for extreme ultraviolet mask absorber |
US11237473B2 (en) | 2019-03-01 | 2022-02-01 | Applied Materials, Inc. | Physical vapor deposition system and processes |
US11249388B2 (en) | 2019-01-31 | 2022-02-15 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
US11249389B2 (en) | 2019-01-31 | 2022-02-15 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
US11249390B2 (en) | 2019-01-31 | 2022-02-15 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
US11275302B2 (en) | 2019-05-22 | 2022-03-15 | Applied Materials Inc. | Extreme ultraviolet mask absorber materials |
US11275304B2 (en) | 2019-05-22 | 2022-03-15 | Applied Materials Inc. | Extreme ultraviolet mask absorber matertals |
US11275303B2 (en) | 2019-05-22 | 2022-03-15 | Applied Materials Inc. | Extreme ultraviolet mask absorber matertals |
US11300872B2 (en) | 2019-05-22 | 2022-04-12 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
US11300871B2 (en) | 2020-04-29 | 2022-04-12 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
US11366379B2 (en) | 2019-05-22 | 2022-06-21 | Applied Materials Inc. | Extreme ultraviolet mask with embedded absorber layer |
US11385536B2 (en) | 2019-08-08 | 2022-07-12 | Applied Materials, Inc. | EUV mask blanks and methods of manufacture |
US11513437B2 (en) | 2021-01-11 | 2022-11-29 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
US11537040B2 (en) | 2020-01-27 | 2022-12-27 | Applied Materials, Inc. | Extreme ultraviolet mask blank hard mask materials |
US11542595B2 (en) | 2019-03-01 | 2023-01-03 | Applied Materials, Inc. | Physical vapor deposition system and processes |
US11556053B2 (en) | 2020-01-27 | 2023-01-17 | Applied Materials, Inc. | Extreme ultraviolet mask blank hard mask materials |
US11592738B2 (en) | 2021-01-28 | 2023-02-28 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
US11609490B2 (en) | 2020-10-06 | 2023-03-21 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
US11630385B2 (en) | 2020-01-24 | 2023-04-18 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
US11639544B2 (en) | 2019-03-01 | 2023-05-02 | Applied Materials, Inc. | Physical vapor deposition system and processes |
US11640109B2 (en) | 2020-01-27 | 2023-05-02 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
US11644741B2 (en) | 2020-04-17 | 2023-05-09 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
US11675263B2 (en) | 2020-07-13 | 2023-06-13 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
US11754917B2 (en) | 2016-07-27 | 2023-09-12 | Applied Materials, Inc. | Extreme ultraviolet mask blank with multilayer absorber and method of manufacture |
US11782337B2 (en) | 2021-09-09 | 2023-10-10 | Applied Materials, Inc. | Multilayer extreme ultraviolet reflectors |
US11815803B2 (en) | 2021-08-30 | 2023-11-14 | Applied Materials, Inc. | Multilayer extreme ultraviolet reflector materials |
US11860533B2 (en) | 2020-03-27 | 2024-01-02 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
-
1987
- 1987-06-30 JP JP62162670A patent/JPS6376325A/ja active Granted
Cited By (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5196283A (en) * | 1989-03-09 | 1993-03-23 | Canon Kabushiki Kaisha | X-ray mask structure, and x-ray exposure process |
US5773177A (en) * | 1989-03-09 | 1998-06-30 | Canon Kabushiki Kaisha | X-ray mask structure, and X-ray exposure process |
JPH0316116A (ja) * | 1989-03-09 | 1991-01-24 | Canon Inc | X線リソグラフィー用マスク構造体及びそれを用いたx線露光方法 |
US5188706A (en) * | 1989-03-18 | 1993-02-23 | Kabushiki Kaisha Toshiba | Method of manufacturing an x-ray exposure mask and device for controlling the internal stress of thin films |
DE4316114A1 (de) * | 1992-06-08 | 1993-12-09 | Mitsubishi Electric Corp | Röntgenstrahlen-Maske und Verfahren zu ihrer Herstellung |
US5496667A (en) * | 1992-06-08 | 1996-03-05 | Mitsubishi Denki Kabushiki Kaisha | X-ray mask and its fabrication method |
DE4316114C2 (de) * | 1992-06-08 | 2001-05-31 | Mitsubishi Electric Corp | Röntgenstrahlen-Maske und Verfahren zu ihrer Herstellung |
US5741626A (en) * | 1996-04-15 | 1998-04-21 | Motorola, Inc. | Method for forming a dielectric tantalum nitride layer as an anti-reflective coating (ARC) |
KR100249209B1 (ko) * | 1997-04-24 | 2000-03-15 | 구자홍 | 엑스-레이(X-ray) 마스크의 흡수체 및 그 제조방법 |
JP2009123852A (ja) * | 2007-11-14 | 2009-06-04 | Dainippon Printing Co Ltd | 半導体装置及びその製造方法 |
US11754917B2 (en) | 2016-07-27 | 2023-09-12 | Applied Materials, Inc. | Extreme ultraviolet mask blank with multilayer absorber and method of manufacture |
US11209727B2 (en) | 2018-10-26 | 2021-12-28 | Applied Materials, Inc. | Ta—Cu alloy material for extreme ultraviolet mask absorber |
WO2020132391A1 (en) * | 2018-12-21 | 2020-06-25 | Applied Materials, Inc. | Extreme ultraviolet mask absorber and processes for manufacture |
JP2022513997A (ja) * | 2018-12-21 | 2022-02-09 | アプライド マテリアルズ インコーポレイテッド | 極紫外線マスク吸収体、及びその製造のためのプロセス |
US11194244B2 (en) | 2018-12-21 | 2021-12-07 | Applied Materials, Inc. | Extreme ultraviolet mask absorber and processes for manufacture |
US11249388B2 (en) | 2019-01-31 | 2022-02-15 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
US11249389B2 (en) | 2019-01-31 | 2022-02-15 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
US11249390B2 (en) | 2019-01-31 | 2022-02-15 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
US11237473B2 (en) | 2019-03-01 | 2022-02-01 | Applied Materials, Inc. | Physical vapor deposition system and processes |
US11639544B2 (en) | 2019-03-01 | 2023-05-02 | Applied Materials, Inc. | Physical vapor deposition system and processes |
US11542595B2 (en) | 2019-03-01 | 2023-01-03 | Applied Materials, Inc. | Physical vapor deposition system and processes |
US11275303B2 (en) | 2019-05-22 | 2022-03-15 | Applied Materials Inc. | Extreme ultraviolet mask absorber matertals |
US11275304B2 (en) | 2019-05-22 | 2022-03-15 | Applied Materials Inc. | Extreme ultraviolet mask absorber matertals |
US11366379B2 (en) | 2019-05-22 | 2022-06-21 | Applied Materials Inc. | Extreme ultraviolet mask with embedded absorber layer |
US11300872B2 (en) | 2019-05-22 | 2022-04-12 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
US11275302B2 (en) | 2019-05-22 | 2022-03-15 | Applied Materials Inc. | Extreme ultraviolet mask absorber materials |
US11385536B2 (en) | 2019-08-08 | 2022-07-12 | Applied Materials, Inc. | EUV mask blanks and methods of manufacture |
US11630385B2 (en) | 2020-01-24 | 2023-04-18 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
US11537040B2 (en) | 2020-01-27 | 2022-12-27 | Applied Materials, Inc. | Extreme ultraviolet mask blank hard mask materials |
US11556053B2 (en) | 2020-01-27 | 2023-01-17 | Applied Materials, Inc. | Extreme ultraviolet mask blank hard mask materials |
US11640109B2 (en) | 2020-01-27 | 2023-05-02 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
US11860533B2 (en) | 2020-03-27 | 2024-01-02 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
US11644741B2 (en) | 2020-04-17 | 2023-05-09 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
US11300871B2 (en) | 2020-04-29 | 2022-04-12 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
US11675263B2 (en) | 2020-07-13 | 2023-06-13 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
US11609490B2 (en) | 2020-10-06 | 2023-03-21 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
US11513437B2 (en) | 2021-01-11 | 2022-11-29 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
US11592738B2 (en) | 2021-01-28 | 2023-02-28 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
US11815803B2 (en) | 2021-08-30 | 2023-11-14 | Applied Materials, Inc. | Multilayer extreme ultraviolet reflector materials |
US11782337B2 (en) | 2021-09-09 | 2023-10-10 | Applied Materials, Inc. | Multilayer extreme ultraviolet reflectors |
Also Published As
Publication number | Publication date |
---|---|
JPH0255934B2 (enrdf_load_html_response) | 1990-11-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |