JPS6376325A - X線リソグラフィ−用マスクのx線吸収体膜 - Google Patents

X線リソグラフィ−用マスクのx線吸収体膜

Info

Publication number
JPS6376325A
JPS6376325A JP62162670A JP16267087A JPS6376325A JP S6376325 A JPS6376325 A JP S6376325A JP 62162670 A JP62162670 A JP 62162670A JP 16267087 A JP16267087 A JP 16267087A JP S6376325 A JPS6376325 A JP S6376325A
Authority
JP
Japan
Prior art keywords
film
ray
stress
sputtering
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62162670A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0255934B2 (enrdf_load_html_response
Inventor
Toshihiko Kanayama
敏彦 金山
Minoru Sugawara
稔 菅原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hoya Corp
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology, Hoya Corp filed Critical Agency of Industrial Science and Technology
Priority to JP62162670A priority Critical patent/JPS6376325A/ja
Publication of JPS6376325A publication Critical patent/JPS6376325A/ja
Publication of JPH0255934B2 publication Critical patent/JPH0255934B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP62162670A 1987-06-30 1987-06-30 X線リソグラフィ−用マスクのx線吸収体膜 Granted JPS6376325A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62162670A JPS6376325A (ja) 1987-06-30 1987-06-30 X線リソグラフィ−用マスクのx線吸収体膜

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62162670A JPS6376325A (ja) 1987-06-30 1987-06-30 X線リソグラフィ−用マスクのx線吸収体膜

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP21791486A Division JPS6376872A (ja) 1986-09-18 1986-09-18 膜の内部圧縮応力低減方法

Publications (2)

Publication Number Publication Date
JPS6376325A true JPS6376325A (ja) 1988-04-06
JPH0255934B2 JPH0255934B2 (enrdf_load_html_response) 1990-11-28

Family

ID=15759052

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62162670A Granted JPS6376325A (ja) 1987-06-30 1987-06-30 X線リソグラフィ−用マスクのx線吸収体膜

Country Status (1)

Country Link
JP (1) JPS6376325A (enrdf_load_html_response)

Cited By (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0316116A (ja) * 1989-03-09 1991-01-24 Canon Inc X線リソグラフィー用マスク構造体及びそれを用いたx線露光方法
US5188706A (en) * 1989-03-18 1993-02-23 Kabushiki Kaisha Toshiba Method of manufacturing an x-ray exposure mask and device for controlling the internal stress of thin films
US5196283A (en) * 1989-03-09 1993-03-23 Canon Kabushiki Kaisha X-ray mask structure, and x-ray exposure process
DE4316114A1 (de) * 1992-06-08 1993-12-09 Mitsubishi Electric Corp Röntgenstrahlen-Maske und Verfahren zu ihrer Herstellung
US5741626A (en) * 1996-04-15 1998-04-21 Motorola, Inc. Method for forming a dielectric tantalum nitride layer as an anti-reflective coating (ARC)
KR100249209B1 (ko) * 1997-04-24 2000-03-15 구자홍 엑스-레이(X-ray) 마스크의 흡수체 및 그 제조방법
JP2009123852A (ja) * 2007-11-14 2009-06-04 Dainippon Printing Co Ltd 半導体装置及びその製造方法
WO2020132391A1 (en) * 2018-12-21 2020-06-25 Applied Materials, Inc. Extreme ultraviolet mask absorber and processes for manufacture
US11209727B2 (en) 2018-10-26 2021-12-28 Applied Materials, Inc. Ta—Cu alloy material for extreme ultraviolet mask absorber
US11237473B2 (en) 2019-03-01 2022-02-01 Applied Materials, Inc. Physical vapor deposition system and processes
US11249388B2 (en) 2019-01-31 2022-02-15 Applied Materials, Inc. Extreme ultraviolet mask absorber materials
US11249389B2 (en) 2019-01-31 2022-02-15 Applied Materials, Inc. Extreme ultraviolet mask absorber materials
US11249390B2 (en) 2019-01-31 2022-02-15 Applied Materials, Inc. Extreme ultraviolet mask absorber materials
US11275302B2 (en) 2019-05-22 2022-03-15 Applied Materials Inc. Extreme ultraviolet mask absorber materials
US11275304B2 (en) 2019-05-22 2022-03-15 Applied Materials Inc. Extreme ultraviolet mask absorber matertals
US11275303B2 (en) 2019-05-22 2022-03-15 Applied Materials Inc. Extreme ultraviolet mask absorber matertals
US11300872B2 (en) 2019-05-22 2022-04-12 Applied Materials, Inc. Extreme ultraviolet mask absorber materials
US11300871B2 (en) 2020-04-29 2022-04-12 Applied Materials, Inc. Extreme ultraviolet mask absorber materials
US11366379B2 (en) 2019-05-22 2022-06-21 Applied Materials Inc. Extreme ultraviolet mask with embedded absorber layer
US11385536B2 (en) 2019-08-08 2022-07-12 Applied Materials, Inc. EUV mask blanks and methods of manufacture
US11513437B2 (en) 2021-01-11 2022-11-29 Applied Materials, Inc. Extreme ultraviolet mask absorber materials
US11537040B2 (en) 2020-01-27 2022-12-27 Applied Materials, Inc. Extreme ultraviolet mask blank hard mask materials
US11542595B2 (en) 2019-03-01 2023-01-03 Applied Materials, Inc. Physical vapor deposition system and processes
US11556053B2 (en) 2020-01-27 2023-01-17 Applied Materials, Inc. Extreme ultraviolet mask blank hard mask materials
US11592738B2 (en) 2021-01-28 2023-02-28 Applied Materials, Inc. Extreme ultraviolet mask absorber materials
US11609490B2 (en) 2020-10-06 2023-03-21 Applied Materials, Inc. Extreme ultraviolet mask absorber materials
US11630385B2 (en) 2020-01-24 2023-04-18 Applied Materials, Inc. Extreme ultraviolet mask absorber materials
US11639544B2 (en) 2019-03-01 2023-05-02 Applied Materials, Inc. Physical vapor deposition system and processes
US11640109B2 (en) 2020-01-27 2023-05-02 Applied Materials, Inc. Extreme ultraviolet mask absorber materials
US11644741B2 (en) 2020-04-17 2023-05-09 Applied Materials, Inc. Extreme ultraviolet mask absorber materials
US11675263B2 (en) 2020-07-13 2023-06-13 Applied Materials, Inc. Extreme ultraviolet mask absorber materials
US11754917B2 (en) 2016-07-27 2023-09-12 Applied Materials, Inc. Extreme ultraviolet mask blank with multilayer absorber and method of manufacture
US11782337B2 (en) 2021-09-09 2023-10-10 Applied Materials, Inc. Multilayer extreme ultraviolet reflectors
US11815803B2 (en) 2021-08-30 2023-11-14 Applied Materials, Inc. Multilayer extreme ultraviolet reflector materials
US11860533B2 (en) 2020-03-27 2024-01-02 Applied Materials, Inc. Extreme ultraviolet mask absorber materials

Cited By (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5196283A (en) * 1989-03-09 1993-03-23 Canon Kabushiki Kaisha X-ray mask structure, and x-ray exposure process
US5773177A (en) * 1989-03-09 1998-06-30 Canon Kabushiki Kaisha X-ray mask structure, and X-ray exposure process
JPH0316116A (ja) * 1989-03-09 1991-01-24 Canon Inc X線リソグラフィー用マスク構造体及びそれを用いたx線露光方法
US5188706A (en) * 1989-03-18 1993-02-23 Kabushiki Kaisha Toshiba Method of manufacturing an x-ray exposure mask and device for controlling the internal stress of thin films
DE4316114A1 (de) * 1992-06-08 1993-12-09 Mitsubishi Electric Corp Röntgenstrahlen-Maske und Verfahren zu ihrer Herstellung
US5496667A (en) * 1992-06-08 1996-03-05 Mitsubishi Denki Kabushiki Kaisha X-ray mask and its fabrication method
DE4316114C2 (de) * 1992-06-08 2001-05-31 Mitsubishi Electric Corp Röntgenstrahlen-Maske und Verfahren zu ihrer Herstellung
US5741626A (en) * 1996-04-15 1998-04-21 Motorola, Inc. Method for forming a dielectric tantalum nitride layer as an anti-reflective coating (ARC)
KR100249209B1 (ko) * 1997-04-24 2000-03-15 구자홍 엑스-레이(X-ray) 마스크의 흡수체 및 그 제조방법
JP2009123852A (ja) * 2007-11-14 2009-06-04 Dainippon Printing Co Ltd 半導体装置及びその製造方法
US11754917B2 (en) 2016-07-27 2023-09-12 Applied Materials, Inc. Extreme ultraviolet mask blank with multilayer absorber and method of manufacture
US11209727B2 (en) 2018-10-26 2021-12-28 Applied Materials, Inc. Ta—Cu alloy material for extreme ultraviolet mask absorber
WO2020132391A1 (en) * 2018-12-21 2020-06-25 Applied Materials, Inc. Extreme ultraviolet mask absorber and processes for manufacture
JP2022513997A (ja) * 2018-12-21 2022-02-09 アプライド マテリアルズ インコーポレイテッド 極紫外線マスク吸収体、及びその製造のためのプロセス
US11194244B2 (en) 2018-12-21 2021-12-07 Applied Materials, Inc. Extreme ultraviolet mask absorber and processes for manufacture
US11249388B2 (en) 2019-01-31 2022-02-15 Applied Materials, Inc. Extreme ultraviolet mask absorber materials
US11249389B2 (en) 2019-01-31 2022-02-15 Applied Materials, Inc. Extreme ultraviolet mask absorber materials
US11249390B2 (en) 2019-01-31 2022-02-15 Applied Materials, Inc. Extreme ultraviolet mask absorber materials
US11237473B2 (en) 2019-03-01 2022-02-01 Applied Materials, Inc. Physical vapor deposition system and processes
US11639544B2 (en) 2019-03-01 2023-05-02 Applied Materials, Inc. Physical vapor deposition system and processes
US11542595B2 (en) 2019-03-01 2023-01-03 Applied Materials, Inc. Physical vapor deposition system and processes
US11275303B2 (en) 2019-05-22 2022-03-15 Applied Materials Inc. Extreme ultraviolet mask absorber matertals
US11275304B2 (en) 2019-05-22 2022-03-15 Applied Materials Inc. Extreme ultraviolet mask absorber matertals
US11366379B2 (en) 2019-05-22 2022-06-21 Applied Materials Inc. Extreme ultraviolet mask with embedded absorber layer
US11300872B2 (en) 2019-05-22 2022-04-12 Applied Materials, Inc. Extreme ultraviolet mask absorber materials
US11275302B2 (en) 2019-05-22 2022-03-15 Applied Materials Inc. Extreme ultraviolet mask absorber materials
US11385536B2 (en) 2019-08-08 2022-07-12 Applied Materials, Inc. EUV mask blanks and methods of manufacture
US11630385B2 (en) 2020-01-24 2023-04-18 Applied Materials, Inc. Extreme ultraviolet mask absorber materials
US11537040B2 (en) 2020-01-27 2022-12-27 Applied Materials, Inc. Extreme ultraviolet mask blank hard mask materials
US11556053B2 (en) 2020-01-27 2023-01-17 Applied Materials, Inc. Extreme ultraviolet mask blank hard mask materials
US11640109B2 (en) 2020-01-27 2023-05-02 Applied Materials, Inc. Extreme ultraviolet mask absorber materials
US11860533B2 (en) 2020-03-27 2024-01-02 Applied Materials, Inc. Extreme ultraviolet mask absorber materials
US11644741B2 (en) 2020-04-17 2023-05-09 Applied Materials, Inc. Extreme ultraviolet mask absorber materials
US11300871B2 (en) 2020-04-29 2022-04-12 Applied Materials, Inc. Extreme ultraviolet mask absorber materials
US11675263B2 (en) 2020-07-13 2023-06-13 Applied Materials, Inc. Extreme ultraviolet mask absorber materials
US11609490B2 (en) 2020-10-06 2023-03-21 Applied Materials, Inc. Extreme ultraviolet mask absorber materials
US11513437B2 (en) 2021-01-11 2022-11-29 Applied Materials, Inc. Extreme ultraviolet mask absorber materials
US11592738B2 (en) 2021-01-28 2023-02-28 Applied Materials, Inc. Extreme ultraviolet mask absorber materials
US11815803B2 (en) 2021-08-30 2023-11-14 Applied Materials, Inc. Multilayer extreme ultraviolet reflector materials
US11782337B2 (en) 2021-09-09 2023-10-10 Applied Materials, Inc. Multilayer extreme ultraviolet reflectors

Also Published As

Publication number Publication date
JPH0255934B2 (enrdf_load_html_response) 1990-11-28

Similar Documents

Publication Publication Date Title
JPS6376325A (ja) X線リソグラフィ−用マスクのx線吸収体膜
US4405710A (en) Ion beam exposure of (g-Gex -Se1-x) inorganic resists
DE69216747T2 (de) Verfahren zur Bildung eines dünnen Films
JP2892231B2 (ja) Ti−Si−N系複合硬質膜及びその製造方法
Hubler et al. Energetic particles in PVD technology: particle-surface interaction processes and energy-particle relationships in thin film deposition
DE102015117176A1 (de) Verfahren zum Bearbeiten eines Trägers
US4976987A (en) Process for forming one or more substantially pure layers in substrate material using ion implantation
DE19747775C2 (de) Röntgenstrahlenabsorber in einer Röntgenstrahlenmaske und Verfahren zur Herstellung desselben
JPS6376872A (ja) 膜の内部圧縮応力低減方法
JP2939530B2 (ja) ビスマスを構成元素に含む多元系酸化物薄膜の結晶成長法
DE3874165T2 (de) Verfahren zur herstellung einer diamantschicht.
Sugawara et al. Stress‐free and amorphous Ta4B or Ta8SiB absorbers for x‐ray masks
JPH0211753A (ja) TiAl系複合部材及びその製造方法
US5124174A (en) Process for forming one or more substantially pure layers in substrate material using ion implantation
JPH05132754A (ja) 炭化チタン薄膜の形成方法
JPH0647725B2 (ja) 非晶質タングステン化合物膜の内部応力低減方法
CN119433460A (zh) 一种(012)晶面取向的铋金属薄膜及其制备方法
NAMBA et al. Growth Process of Ag Film Deposited by Ion Deposition
DE69516420T2 (de) VERFAHREN ZUM IN-SITU AUFTRAGEN EINER Ti/TiN ENTHALTENDEN METALLSPERRSCHICHT
JPS61124561A (ja) 化合物薄膜の製造方法
JPH03273610A (ja) マスクの製造方法
JPH03297175A (ja) 薄膜超電導素子の製造方法
JPS63219591A (ja) イオンビ−ム・レジスト及びその作製方法
JPH03202468A (ja) 膜形成方法
JPS59134821A (ja) 薄膜の製造方法及び製造装置

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term