JPS6375853A - Memory device - Google Patents

Memory device

Info

Publication number
JPS6375853A
JPS6375853A JP61220283A JP22028386A JPS6375853A JP S6375853 A JPS6375853 A JP S6375853A JP 61220283 A JP61220283 A JP 61220283A JP 22028386 A JP22028386 A JP 22028386A JP S6375853 A JPS6375853 A JP S6375853A
Authority
JP
Japan
Prior art keywords
gates
memory element
signal
inputted
input
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61220283A
Other languages
Japanese (ja)
Inventor
Noriaki Maekawa
前川 則昭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyo Communication Equipment Co Ltd
Original Assignee
Toyo Communication Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyo Communication Equipment Co Ltd filed Critical Toyo Communication Equipment Co Ltd
Priority to JP61220283A priority Critical patent/JPS6375853A/en
Publication of JPS6375853A publication Critical patent/JPS6375853A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To prevent the occurrence of an unexpected accident by arbitrarily reading and writing data in a switched and set read/write address range and deciding the classification of a mounted memory element according as the normal operation is performed or not and switching and connecting the input and the output of this element to prescribed states in accordance with decision result. CONSTITUTION:In case of access to a memory element 1, a processor 2 sets an FF 3, and the output is inputted to NAND gates G1 of switching connection gates 4 and 5 of upper address signals A14 and A13, and the inverted output is inputted NAND gates G2 of gates 4 and 5. The signal A14 and a memory write signal MWRO are inputted to gates G1 of gates 4 and 5 respectively, and signal '1' and the signal A14 are inputted to gates G2 of gates 4 and 5, and outputs of gates G1 and G2 of gates 4 and 5 are inputted to address signal input terminals X and Y of the element 1 through negative logic OR gates G3.

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明はメモリ装置に関するものである。[Detailed description of the invention] [Industrial application field] The present invention relates to a memory device.

[従来の技術] 従来において、同−記・n容量で同一形状の読出し専用
メモリ素子(ROM)と読み書き両用メモリ素子(1”
(AM)とを基板の同一実装場所で入れ替えて使用する
メモリRuffがある。
[Prior Art] Conventionally, a read-only memory element (ROM) and a read/write memory element (1"
There is a memory Ruff which is used interchangeably with (AM) at the same mounting location on the board.

このようなメモリ装置においては、実際に実装されたメ
モリ素子の入出力端子配列に応じてアドレスバスやf−
タバスとの接続関係を規定の状態に切替える必要がある
In such a memory device, the address bus and f-
It is necessary to switch the connection relationship with Tabas to the specified state.

そこで、例えば256にビットの記・n容量のROMま
たはRAMのいずれを実装しても使用できるものでは、
第2図の従来回路構成に示すように、当該メモリ素子I
A、1Bに人出力されるデータ信号DO〜D7.メモリ
ライト信号MWROアドレス信号AO〜A14のうち、
上位アドレス信号A14とメモリライト信号MWROに
ついて1A、1BをROMにしたときとRAMにしたと
きとでスイッチSW1〜SW4で切替えるようにしてい
る。
Therefore, for example, if a 256-bit memory/n capacity ROM or RAM is installed, it can be used.
As shown in the conventional circuit configuration of FIG.
Data signals DO to D7.A and 1B are output. Among the memory write signal MWRO address signals AO to A14,
The upper address signal A14 and memory write signal MWRO are switched by switches SW1 to SW4 depending on whether 1A and 1B are set to ROM or RAM.

すなわち、1AにROMを実装した場合はスイッチSW
3とSW4を図示のように切替えるようにしている。
In other words, if ROM is mounted on 1A, switch SW
3 and SW4 are switched as shown.

[発明が解決しようとする問題点] ところが、メモリ素子の入出力を手動で切替えるように
しているため、その切替え設定操作が面倒であり、切替
え設定を忘れてしまった場合には予期せぬ事故が発生し
てしまうという問題があった。
[Problems to be solved by the invention] However, since the input and output of the memory element is manually switched, the switching setting operation is troublesome, and if the switching setting is forgotten, an unexpected accident may occur. There was a problem that this occurred.

本発明の目的は、入出力関係の切替え設定を自動的に行
い、不測の事故が発生するのを防止できるようにしたメ
モリ装置を提供することにある。
SUMMARY OF THE INVENTION An object of the present invention is to provide a memory device that automatically performs input/output related switching settings to prevent unexpected accidents from occurring.

E問題点を解決するための手段J 本発明は、データの読み書きアドレス範囲を切替え設定
し、各読み書きアドレス範囲で任意のデータの読み出き
を行って正常な読み書き動作が行なわれたか否かによっ
て現在実装されているメモリ素子の種類を判定する判定
手段と、その判定結果に基づいて実装されているメモリ
素子の入出力を規定状態に切替接続するり行手段とを設
けたものである。
Means for Solving Problem E J The present invention switches and sets data read/write address ranges, reads arbitrary data in each read/write address range, and determines whether or not a normal read/write operation has been performed. The device is provided with a determining means for determining the type of the currently mounted memory element, and a switching means for switching and connecting the input and output of the mounted memory element to a specified state based on the result of the determination.

[作用] 判定手段は、メモリ素子の実装後アドレス信号で指定し
得るアドレス範囲の中の任意のアドレス範囲を設定し、
このアドレス範囲で任意のデータの読み出きを行う。そ
して、書込んだデータと読出しデータが一致すればRA
Mであると判定し、そのメモリ素子の入出力信号線を規
定の入出力関係に切替え接続させる。しかし、書込んだ
データと読出したデータとが不一致の場合にはROMで
あるものと判定し、規定の入出力関係に切替え接続させ
る。
[Operation] The determination means sets an arbitrary address range within the address range that can be specified by the address signal after the memory element is mounted,
Any data can be read within this address range. Then, if the written data and read data match, RA
It is determined that the memory element is M, and the input/output signal lines of the memory element are switched and connected in a prescribed input/output relationship. However, if the written data and the read data do not match, it is determined that it is a ROM, and the connection is switched to a prescribed input/output relationship.

[実施例] 第1図は本発明の一実施例を示す回路図であり、256
にビットのROMまたはRAMを入れ替えて使用する場
合の回路について示している。
[Embodiment] FIG. 1 is a circuit diagram showing an embodiment of the present invention, with 256
A circuit is shown in which bits of ROM or RAM are exchanged and used.

図において、メモリ素子、1は電源が投入された段階で
はROMであるのか、RAMであるのかは不明である。
In the figure, it is unclear whether the memory element 1 is a ROM or a RAM when the power is turned on.

そこで、このメモリ素子1をアクセスするプロセッサ2
はフリップノロツブ3にセット信号5ETIを送り、該
フリップフロップ3をセット状態にする。
Therefore, the processor 2 that accesses this memory element 1
sends a set signal 5ETI to the flip-flop 3 to set the flip-flop 3.

フリップフロップ3のセット出力Qは、上位アドレス信
号A14とA13の切替え接続ゲート4.5のナントゲ
ートG1に共通に入力され、また反転セット出力は他方
のナントゲートG2に共通に入力されていいる。そして
、切替え接続ゲート4のナントゲートG1の他方の入力
にはアドレス信号A14が、またナントゲートG2の他
方の入力にはパ1”が入力されている。さらに、切替え
接続ゲート5のナントゲートG1の他方の入力にはメモ
リライト信号M W ROが、またナントゲートG2の
他方の入力にはアドレス信号A14が入力されている。
The set output Q of the flip-flop 3 is commonly input to the Nant gate G1 of the switching connection gate 4.5 of the upper address signals A14 and A13, and the inverted set output is commonly input to the other Nant gate G2. The address signal A14 is input to the other input of the Nant gate G1 of the switching connection gate 4, and the address signal A1'' is input to the other input of the Nant gate G2. The memory write signal M W RO is input to the other input of the Nant gate G2, and the address signal A14 is input to the other input of the Nant gate G2.

そしてまた、切替え接続ゲート3のナントゲートG1.
G2の出力は負論理オアゲートG3を介してメモリ素子
1のの入出力端子Xに接続され、一方の切替え接続ゲー
ト5のナントゲートG1.G2の出力も同球に負論理オ
アゲートG3を介してメモリ素子1の入力端子Yに接続
されている。
And also, the Nantes gate G1 of the switching connection gate 3.
The output of G2 is connected to the input/output terminals X of the memory element 1 via a negative logic OR gate G3, and the output of one of the switching connection gates 5 is connected to the Nant gate G1. The output of G2 is also connected to the input terminal Y of the memory element 1 via a negative logic OR gate G3.

従って、入力端子XをRAMのアドレス信号A14の入
力端子、Yをメモリライト信f”;MWROの入力端子
とすると、フリップノロツブ3がセット状態になると、
メモリ素子1の入力端子X、 YにはA14とMWRO
を入力し得る状態になる。そこで、プロセッサ2は25
6にビットより小さい任意のアドレス範囲をアドレス信
eA14〜AOで設定し、そのアドレス範囲で任意のデ
ータの書込みを行う。その後、同じアドレス範囲でデー
タの読出しを行い、前にm込んだデータと一致するか否
かを検出する。もし、一致するならばデータの読み♂き
の両方が正常に行なわれたことになるので、この時実装
されているメモリ素子1はRAMであるものと判定し、
フリップフロップ3をセット状態のままに保持させてそ
の後のアクセスを行う。
Therefore, if the input terminal X is the input terminal for the RAM address signal A14, and Y is the input terminal for the memory write signal f'';
A14 and MWRO are connected to the input terminals X and Y of memory element 1.
You can enter the following information. Therefore, processor 2 has 25
An arbitrary address range smaller than 6 bits is set using address signals eA14 to AO, and arbitrary data is written in that address range. Thereafter, data is read in the same address range, and it is detected whether or not it matches the previously read data. If they match, it means that both data reading and reading were performed normally, so it is determined that the memory element 1 mounted at this time is a RAM,
The flip-flop 3 is kept in the set state for subsequent access.

しかし、店込んだデータと読出したデータとが不一致の
場合、このとき実装されているメモリ素子1はROMで
あるものと判定し、フリップフロップ3をリセット状態
に切替える。すると、メモリ素子1の入力端子Xには切
替え接続ゲート4のナントゲートG2およびオアゲート
G3を介して111 IIが入力され、また入力端子Y
には切替え接続ゲート5のナントゲートG 2 ;J3
よびオアゲートG3を介してアドレス信¥3iA14が
入力されてROMとして使用可能な状態になる。
However, if the stored data and the read data do not match, it is determined that the memory element 1 mounted at this time is a ROM, and the flip-flop 3 is switched to the reset state. Then, 111 II is input to the input terminal X of the memory element 1 via the Nant gate G2 and the OR gate G3 of the switching connection gate 4, and the input terminal Y
is the Nantes gate G2 of the switching connection gate 5; J3
Then, the address signal ¥3iA14 is inputted through the OR gate G3, and the memory becomes usable as a ROM.

なお、図中の6はアドレス信@A14より上位側のアド
レス信号A15. A16をデコードし、これらの信号
の組合せによってメモリ素子1に対してチップイネーブ
ル信号CE1を与えるデコーダであり、これはプロセッ
サ2のアドレスバスADR・BUSが16ビツトで構成
されているので、メモリ素子1以外のメモリ素子をも選
択できるようにするために設けられているものである。
Note that 6 in the figure is the address signal A15. which is higher than the address signal @A14. This is a decoder that decodes A16 and provides a chip enable signal CE1 to memory element 1 by a combination of these signals. This is provided to enable selection of memory elements other than the above.

なお、この実施例において切替え接続はゲート回路素子
を用いて行っているが、外部側υ0が可能なリレー接点
等を用いてもよい。
In this embodiment, the switching connection is performed using a gate circuit element, but a relay contact or the like capable of external side υ0 may also be used.

[発明の効果] 以上説明したように本光明によれば、実装されたメモリ
素子の種類を自動的に判定して規定の入出力関係に切替
え接続するため、メモリ素子を入れ替えた際に手動の切
替え操作を行う必要がなくなり、その切替え操作ミス等
による不測の事故を完全に防止することができる。
[Effects of the Invention] As explained above, according to the present Komei, the type of the mounted memory element is automatically determined and the connection is switched to the specified input/output relationship, so that manual operation is not required when replacing the memory element. There is no need to perform a switching operation, and unexpected accidents caused by mistakes in the switching operation can be completely prevented.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例を示す回路図、第2図は従来
構成を示す回路図である。 1・・・メモリ素子、2・・・プロセッサ、3・・・フ
リップフロップ、4.5・・・切替え接続ゲート。 第1図
FIG. 1 is a circuit diagram showing one embodiment of the present invention, and FIG. 2 is a circuit diagram showing a conventional configuration. DESCRIPTION OF SYMBOLS 1...Memory element, 2...Processor, 3...Flip-flop, 4.5...Switch connection gate. Figure 1

Claims (1)

【特許請求の範囲】[Claims]  同一記憶容量で同一形状の読出し専用メモリ素子と読
み書き両用メモリ素子とを基板の同一実装場所で入替え
て使用するメモリ装置において、データの読み書きアド
レス範囲を切替え設定し、各読み書きアドレス範囲で任
意のデータの読み書きを行つて正常な読み書き動作が行
なわれたか否かによつて現在実装されているメモリ素子
の種類を判定する判定手段と、その判定結果に基づいて
実装されているメモリ素子の入出力を規定状態に切替接
続する切替手段とを備えて成るメモリ装置。
In a memory device that uses a read-only memory element and a read-write memory element with the same storage capacity and the same shape interchangeably at the same mounting location on the board, the data read/write address range is switched and set, and arbitrary data can be stored in each read/write address range. determining means for determining the type of the currently installed memory element based on whether or not normal reading and writing operations have been performed, and determining the input/output of the installed memory element based on the determination result. A memory device comprising: switching means for switching connection to a specified state.
JP61220283A 1986-09-18 1986-09-18 Memory device Pending JPS6375853A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61220283A JPS6375853A (en) 1986-09-18 1986-09-18 Memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61220283A JPS6375853A (en) 1986-09-18 1986-09-18 Memory device

Publications (1)

Publication Number Publication Date
JPS6375853A true JPS6375853A (en) 1988-04-06

Family

ID=16748743

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61220283A Pending JPS6375853A (en) 1986-09-18 1986-09-18 Memory device

Country Status (1)

Country Link
JP (1) JPS6375853A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5465047A (en) * 1991-12-06 1995-11-07 Nikkiso Co., Ltd. Electron spin resonator having variable resonance frequency and error detecting automatic frequency control

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58125125A (en) * 1982-01-21 1983-07-26 Toshiba Corp Starting method of program
JPS59177778A (en) * 1983-03-28 1984-10-08 Chino Works Ltd Electronic device
JPS60197993A (en) * 1984-03-21 1985-10-07 Toshiba Corp Memory contents reader

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58125125A (en) * 1982-01-21 1983-07-26 Toshiba Corp Starting method of program
JPS59177778A (en) * 1983-03-28 1984-10-08 Chino Works Ltd Electronic device
JPS60197993A (en) * 1984-03-21 1985-10-07 Toshiba Corp Memory contents reader

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5465047A (en) * 1991-12-06 1995-11-07 Nikkiso Co., Ltd. Electron spin resonator having variable resonance frequency and error detecting automatic frequency control

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