JPS636830A - 分子線結晶成長装置 - Google Patents
分子線結晶成長装置Info
- Publication number
- JPS636830A JPS636830A JP14828586A JP14828586A JPS636830A JP S636830 A JPS636830 A JP S636830A JP 14828586 A JP14828586 A JP 14828586A JP 14828586 A JP14828586 A JP 14828586A JP S636830 A JPS636830 A JP S636830A
- Authority
- JP
- Japan
- Prior art keywords
- molecular beam
- crucible
- source
- crystal growth
- liquid surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims description 23
- 239000000758 substrate Substances 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 10
- 239000007788 liquid Substances 0.000 abstract description 14
- 239000000463 material Substances 0.000 abstract description 3
- 238000000151 deposition Methods 0.000 abstract 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 description 17
- 238000001704 evaporation Methods 0.000 description 17
- 230000007423 decrease Effects 0.000 description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 235000015067 sauces Nutrition 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14828586A JPS636830A (ja) | 1986-06-26 | 1986-06-26 | 分子線結晶成長装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14828586A JPS636830A (ja) | 1986-06-26 | 1986-06-26 | 分子線結晶成長装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS636830A true JPS636830A (ja) | 1988-01-12 |
| JPH035054B2 JPH035054B2 (enExample) | 1991-01-24 |
Family
ID=15449347
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14828586A Granted JPS636830A (ja) | 1986-06-26 | 1986-06-26 | 分子線結晶成長装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS636830A (enExample) |
-
1986
- 1986-06-26 JP JP14828586A patent/JPS636830A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH035054B2 (enExample) | 1991-01-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS636830A (ja) | 分子線結晶成長装置 | |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |