JPS6365632A - Manufacture of thin type module - Google Patents

Abstract

PURPOSE:To attain simplification of a module substrate, thinning of module layer and improvement of yield by a method wherein a semiconductor chip is facedown-bonded by film carrier process. CONSTITUTION:A metallic foil such as copper, etc., is bonded onto an insulating film provided with sprocket holes 13b for carriage and alignment as well as a device hole 14b containing a semiconductor chip 1b while a film carrier tape 16b formed of leads 11b taking specified shape of the metallic foil by etching process etc. and the semiconductor chip 1b provided with metallic bumps 17 on electrode terminals are prepared to inner lead-bond the leads 11b of film carrier tape 16b and the bumps 17b of semiconductor chip with one another. Finally, after coating resin 12b to fill the gap between the surface, leads and the edges of semiconductor chip 1b, a semiconductor chip with leads can be manufactured by means of cutting off the leads 11b to isolate the semiconductor chip 1b from the film carrier tape 16b.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for manufacturing a thin module incorporating a semiconductor chip, particularly an ultra-thin module built into an ultra-thin electronic device such as an IC card.

[Conventional technology]

Conventionally, as a manufacturing method for this type of thin module, a cavity portion 2a into which a semiconductor chip la is inserted, a resin dam 3a, a large number of wiring layers 4a, terminals 5a for leading to the outside, etc. are formed as shown in FIG. 7, for example. A module board 6a is prepared. The wiring layer 4a of the module board and the external lead-out terminal 5a are electrically connected through the through hole 18a.

Next, the semiconductor chip 1a is fixed to the module board 6a with an adhesive 7a made of base I, etc., and the electrode terminals of the semiconductor chip and the bonding pads 8a, which are part of the wiring layer 4a of the module board, are bonded. Bonding is performed using wire 9a, and then sealing resin 10a is applied.
The semiconductor chip 1a is covered and sealed to complete a thin module.

In addition, if you want to make the thin module even thinner,
Part of the surface of the sealing resin 10a and the resin dam 3a is ground or made thinner.

[Problem that the invention seeks to solve]

In the conventional thin module manufacturing method described above,
Various problems have arisen in response to the recent demand for thinner products such as calculators and IC cards.

That is, since the thickness of ultra-thin electronic devices such as ultra-thin calculators and IC cards is approximately 0.8+111, the thickness of the built-in thin module is required to be approximately 0.5 to 0.6 mm. There is. In order to realize such an ultra-thin module, the module substrate must be made 0.5 to 0.6 times thicker, the semiconductor chip must be made thinner by back grinding to less than 0.3 times, and the bonding wire loop height must be reduced. Need to be controlled low.

However, in order to implement the above-mentioned matters, there are the following manufacturing problems.

(]) Since the thickness of the module substrate is thin, it is difficult to control the dimensions of each part, such as the height of the resin dam and the depth of the cavity in which the semiconductor chip is inserted, and the variation thereof is also a non-negligible amount.

(2) Regarding the backside grinding that is normally performed in the wafer state, it is difficult to reduce the thickness to 0.3 mm or less and to control the thickness due to the recent increase in the diameter of wafers, and the variation is large.

(3) Even in the case of reducing the loop height of the bonding wire, it is difficult to control the height and there are large variations. Among the above-mentioned problems, the height of the resin dam is low, the semiconductor chip is thick, and it is exposed from the bottom fat. In addition, if the depth of the cavity into which the semiconductor chip is inserted is shallow, the thickness of the semiconductor chip is large, and the loop height of the bonding wire is low, the bonding wire may come into contact with the edge of the semiconductor chip and cause a short circuit. This was causing problems.

To address these problems, there is a method of manufacturing thin modules by strictly controlling the dimensions of each part of the module substrate, the thickness of the semiconductor chip, and the loop height of the bonding wire, but this method has the problem of causing a significant decrease in yield. .

Further, if bonding is performed by a film carrier method instead of a wire bonding method, the height of the lead, which is a connecting wire, can be controlled to be low, but other problems remain and this is not a sufficient solution. In particular, when the thickness is reduced by grinding or the like, there is a problem in that the leads of the bonding wire or soil rem carrier tape are exposed or cut.

[Means for solving problems]

In the method for manufacturing a thin semiconductor module of the present invention, a film carrier tape having at least a sprocket hole for transportation and positioning, a device hole into which a semiconductor chip is inserted, and a lead, and a semiconductor chip with bumps provided on electrode terminals in advance are prepared. a step of inner lead bonding between the leads of the film carrier tape and the bumps of the semiconductor chip; and a step of coating the film carrier tape with a resin so as to fill at least the surface of the semiconductor chip and the space between the edges of the semiconductor chip and the leads. a step of cutting the leads and separating the semiconductor chip from the film carrier tape; a step of preparing a module substrate having a cavity portion into which the semiconductor chip is placed, a wiring layer, a resin dam, and an external lead-out terminal; A step of fixing the lead-cut semiconductor chip face down in the cavity part of the board with an adhesive, and outer lead bonding of the lead to a bonding pad that is a part of the wiring layer of the module board. and a step of covering and sealing the semiconductor chip with a sealing resin.

〔Example〕

Next, embodiments of the present invention will be described with reference to the drawings.

FIG. 1 is a plan view showing a state in which a semiconductor chip is bonded to a film carrier tape.

First, as shown in FIG. 1, a metal foil such as copper is bonded onto an insulating film having a sprocket hole 13b for transportation and positioning and a device hole 14b into which the semiconductor chip 1b is inserted, and the metal foil is etched into a desired shape. A film carrier tape 16b on which leads llb, electrical selection pads 15b, etc. are formed, and a semiconductor chip 1b on which bumps 17b, which are metal protrusions, have been provided on electrode terminals, are prepared. Inner lead bonding is performed between llb and the bump 17b of the semiconductor chip.

Next, in the form of a film carrier tape, a coating resin 12 made of silicone resin or the like is applied so as to fill at least the surface of the semiconductor chip and between the leads and the edge of the semiconductor chip for the purpose of surface protection and prevention of semiconductor chip edge touch.
After coating the semiconductor chip 1b, the leads 1b are cut and the semiconductor chip 1b is separated from the film carrier tape 16b, resulting in a leaded semiconductor chip as shown in FIG.

Note that electrical sorting of semiconductor chips can be carried out by bringing a contact into contact with the electrical sorting pad 151 of the film carrier tape before cutting the leads, but it is possible to conduct electrical sorting of semiconductor chips even after the thin module is completed. It is also possible to omit electrical selection using a carrier tape.

Next, a module substrate 6b on which a cavity portion 2b, a resin dam 3b, a wiring layer 4b, an external lead-out terminal 5b, etc. are formed as shown in FIG. 3 is prepared, and the semiconductor chip 11) separated by the lead cutting is attached. After fixing to the cavity part 21) of the module board via the adhesive 7b with the surface facing down, the lead Ilb is outer lead bonded to the bonding pad 8b which is a part of the wiring layer 4b of the module board.

Here, the wiring layer 4b of the module board and the external lead-out terminal 5
b via a through hole 181].

In addition, the module board was made by providing a wiring layer and terminals for leading to the outside on both sides of a single insulating board, and then bonding another insulating board to serve as a resin dam. The insulating substrate has a two-layer structure, and as shown in FIG. 7, the conventional module substrate has one insulating substrate on which the semiconductor chip is mounted, and another layer forming the cavity 2b. After bonding an insulating substrate, a wiring layer and an external lead-out terminal were provided on both sides, and another insulating substrate that would become a resin dam was bonded. Compared to an insulating substrate that has a three-layer structure, manufacturing of the module substrate is also simplified, improving yield and stabilizing the thickness of the module substrate.

Next, as shown in FIG. 4, the entire semiconductor chip 1b is covered and sealed with a sealing resin 10b.

Next, as shown in FIG. 5, the back surface of the semiconductor chip lb, the resin dam 3b, and part of the sealing resin 10b are removed by grinding or polishing the surface sealed with the sealing resin to complete a thin semiconductor module. .

Here, in the case of a normal thin module, thinning by grinding may be omitted. In this case as well, thickness control can be stabilized by simplifying the module substrate and the lead height can be controlled to be low by using one type of film carrier, making it possible to make the module thinner than before.

In addition, when thinning is performed by grinding, the parts to be ground are the back surface of the semiconductor chip, the resin dam, and the sealing resin, and the functional parts of the semiconductor chip are several μm or less below the surface. Grinding is possible until it reaches the functional parts of the semiconductor chip, the leads, or the wiring layer of the module substrate, and the module thickness can be realized from about 0.2 to Oj+ua, making it possible to make it ultra-thin. Furthermore, the conventional problems caused by variations in module substrate thickness, semiconductor chip thickness, and lead height are all eliminated by grinding, and the strict control required in the conventional method is not required, leading to an improvement in yield.

In addition, in the above-mentioned embodiment, the module board has two insulating substrate layers and one wiring layer excluding external lead-out terminals.
It has a layered structure, but if the wiring is complicated, the 6th layer
As shown in the figure, a module board with multiple layers of insulating substrates and wiring layers may be used.

Note that for the sake of convenience, the cut surfaces of the semiconductor chips are not shaded.

〔Effect of the invention〕

As explained above, the present invention simplifies the module substrate, reduces the thickness of the module layer, and improves the yield by face-down bonding the semiconductor chip with a single film carrier, and by grinding the module. There is an effect that the thickness can be made even thinner than that achieved by conventional grinding.

[Brief explanation of the drawing]

Figures 1 to 6 are drawings for explaining one embodiment of the present invention. Figure 1 is a plan view showing a semiconductor chip bonded to a film tape and a tape, and Figure 2 is a semiconductor chip with leads. , FIG. 4 is a cross-sectional view of a semi-finished product in an intermediate process, FIGS. 4, 5, and 6 are cross-sectional views of a thin module according to the present invention, and FIG. 7 is a thin module according to a conventional example. FIG. la, lb...semiconductor chip, 2a, 21:)...
Cavity part, 3a, 3b...Resin dam, 4a, 4b
... Wiring layer, 5a, 5b... External lead-out terminal, 6a
, 6b...Module board, 7a, 7b...Adhesive, 8a, 8b...Bonding pad, 9a...
Honing wire, 10a, 10b... Sealing resin, llb... Lead, 12b... Coating resin, 13b... Sprocket hole, 14b... Device hole, 15b... Pad, 16b... ...Film carrier tape, 17b...Bump, 18a,
18b...Through ball. Fig. 1 Fig. 2 Main tip for 1/A conductor. ri) 3 Figure 11b! No 1 1b ″44 Ihon Sensofu. Hb Sword 1b Semiconductor Ihonkofu. Figure 6 1 Le Half Barrel I Wood Tsubu Figure 7

Claims (1)

[Claims] A step of preparing a film carrier tape having at least a sprocket hole for conveyance and positioning, a device hole into which a semiconductor chip is inserted, and a lead, and a semiconductor chip having bumps provided on electrode terminals in advance; a step of performing inner lead bonding with the bumps of the semiconductor chip;
a step of coating a resin in the state of a film carrier tape so as to fill at least the surface of the semiconductor chip and a gap between the semiconductor chip edge and the leads; a step of cutting the leads to separate the semiconductor chip from the film carrier tape; and a step of separating the semiconductor chip from the film carrier tape. A process of preparing a module board having a cavity part into which the lead is inserted, a wiring layer, a resin dam, and a terminal for leading out to the outside, and applying adhesive to the cavity part of the module board by placing the semiconductor chip with the leads cut face down. a step of bonding the leads to bonding pads that are part of the wiring layer of the module board; and a step of covering and sealing the semiconductor chip with a sealing resin. A method for manufacturing ultra-thin modules.