JPS63147352A - Ultra thin module - Google Patents

Abstract

PURPOSE:To enable the thickness of a semiconductor chip and a container thereof to be specified in required minimum values subject to no manufactural restriction by a method wherein the semiconductor chip is face-bonded by film carrier process. CONSTITUTION:The title thin module is composed of wiring layers 4 and externally leading out terminals 6 respectively on the surface and back surface and a module substrate 7 internally connected to wiring layers 4a, 4b and externally leading out terminals 6a, 6b; resin dams 8 formed into the module substrate 7 and a cavity part 2 as a semiconductor container laminated on the end of module substrate 7; a semiconductor chip 1 provided with leads 11 of film carrier tape connecting to electrode terminals and face-bonded onto the wiring layers 4 of module substrate 7; and a sealing resin 9 with resin dams 8 wherein the semiconductor chip 1 is buried. Furthermore, the rear of semiconductor chip 1 face-bonded is ground near the element functional part together with the surfaces of resin dams 8 and the sealing resin 9 for thinning the title module.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to an ultra-thin module containing a semiconductor chip, and particularly to the structure of an ultra-thin module built into an ultra-thin electronic device such as an IC card.

[Conventional technology]

FIG. 7 is a sectional view showing a typical structure of a conventional thin module of this type. It consists of a module substrate 7 that leads to external lead-out terminals 6a and 6b via 5, and a sealing resin 9 that fills the inside of a resin dam 8. Here, 10
is an adhesive made of silver paste or the like. That is, the semiconductor chip 1 is mounted on the module substrate 7 by the usual wire bonding method, and a part of the surface of the sealing resin 9 and the resin dam 8 is ground so as to reduce the overall thickness. Ru.

[Problem that the invention seeks to solve]

However, this conventional thin module is not sufficient to meet the recent demands for thinning of semiconductor devices such as calculators and IC cards, and various problems have arisen.

In other words, since the thickness of ultra-thin electronic devices such as ultra-thin calculators and IC cards is about 0.8+am, the thin module to be built into them is required to have a thickness of about 0.5 to 0.6 am. be done. Therefore, if you try to realize this with a conventional ultra-thin module structure, the thickness of the entire module will be 0.5~
It becomes necessary to reduce the thickness of the semiconductor chip 1 to 0.3 mm or less by back grinding or the like so that the thickness becomes 0.61 mm, and further to control the loop height of the bonding wire 3 to be low. However, there are many problems in manufacturing in order to satisfy the above conditions.

That is, (1) Since the module board 7 is thin, the resin dam 8
It is difficult to control dimensions such as the height of the semiconductor chip 1 and the depth of the cavity 2 into which the semiconductor chip 1 is placed, and the variation thereof is too large to be ignored.

2) Normally, when back grinding is performed on a wafer, it is difficult to reduce the thickness to 0.3 degrees or less due to the recent increase in the diameter of wafers, and it is difficult to control the thickness, and the variation is large.

(3) When lowering the loop height of the bonding wire 3, it is difficult to control the height, and the variation is similarly large.

Therefore, if the height of the resin dam 8 is low, the thickness of the semiconductor chip 1 is large, and the loop height of the bonding wire 3 is high, a part of the bonding wire 3 may be covered with the resin covered and sealed. When the depth of the cavity 2 exposed from the semiconductor chip 9 and into which the semiconductor chip 1 is inserted is shallow, the thickness of the semiconductor chip 1 is thick, and the loop height of the bonding wire 3 is low, the bonding wire 3 is connected to the semiconductor chip 1. Contact with the edge of the battery and cause a short circuit. That is, an edge touch accident of the semiconductor chip occurs.

These problems can be solved by strictly controlling the dimensions of each part of the module substrate 7, the thickness of the semiconductor chip 1, and the loop height of the bonding wire 3, but since this causes a significant decrease in yield, there is no fundamental solution. It is not.

Also, if bonding is performed using the film carrier method instead of the wire bonding method, the height of the connecting leads (not shown) can be controlled low, but other problems still remain and this is not a sufficient solution. .

In particular, when the semiconductor chip 1 is made thinner by grinding or the like, accidents such as bonding wires or leads of the film carrier tape being exposed or cut are likely to occur.

In view of the above circumstances, an object of the present invention is to provide an ultra-thin module having a structure that allows the thickness of semiconductor chips and storage containers to be set to the minimum necessary without being subject to manufacturing constraints. .

[Means for solving problems]

According to the present invention, an ultra-thin module includes a module substrate having a wiring layer and an external lead-out terminal on the top and bottom surfaces and internally connecting the wiring layer and the external lead-out terminal via a through hole, and an end of the module board. A resin dam is laminated on the module substrate and forms a cavity of the semiconductor storage container, and a film carrier tape lead is connected to the electrode terminal, and face bonding is performed on the wiring layer of the module substrate within the cavity. and a sealing resin for burying the semiconductor chip in a resin dam.

Further, the back surface of the face-bonded semiconductor chip is ground together with the resin dam surface and the sealing resin surface close to the element functional part to make it ultra-thin.

〔Example〕

Hereinafter, the present invention will be described in detail with reference to the drawings.

FIG. 1 is a cross-sectional structural diagram showing one embodiment of the present invention. According to this embodiment, the ultra-thin module of the present invention is manufactured by a film carrier method and has a film carrier tape lead 1 ta on the surface.

1], b is placed in the cavity part 2.
Face bonding is performed on the wiring layers 4a and 4b within the
In addition, external lead-out terminals 6a and 6b are provided through the through hole 5.
A resin dam 8 that forms a two-layer semiconductor storage container with the module substrate 7, and a sealing resin 9 that buries the semiconductor chip 1 in the resin dam 8.
including. Here, 12 is a coating resin coated on the surface of the semiconductor chip 1, and lO is an adhesive.

According to this embodiment, the back surface of the semiconductor chip 1, a portion of the resin dam 8 and the sealing resin 9 are removed by grinding, and are further made extremely thin.

The ultra-thin module shown in this example can be easily manufactured by the following method.

2 to 5 are a plan view and a cross-sectional view showing the process sequence of the method for manufacturing an ultra-thin module according to the present invention. First, the second
As shown in the figure, metal foil such as copper is bonded onto an insulating film having sprocket holes 13 and device holes 14 for conveyance and positioning, and the metal foil is etched to form leads lla and llb in the desired shape. Film carrier tape 16 on which electrical sorting pads 15 etc. are formed
and a semiconductor chip 1 in which bump electrodes 17 are provided on the electrode terminals are prepared respectively, and leads 11a, ll are prepared.
b and the bump electrode 17 of the semiconductor chip are bonded to each other on the film carrier tape 16 by inner lead bonding.

Next, in this state, a coating resin 1 made of silicone resin or the like is applied to at least the surface of the semiconductor chip 1 and between the leads lla and llb and the edge of the semiconductor chip for the purpose of surface protection and prevention of edge touching of the semiconductor chip.
After coating 2, lead lla as shown in Figure 3.
, llb is cut to separate the semiconductor chip 1 from the film carrier tape 16. At this time, electrical selection of the semiconductor chips is normally carried out by bringing a contact into contact with the electrical selection pad 15 of the film carrier tape before cutting the leads, but electrical selection is possible even after the thin module is completed. Electrical screening on the film carrier tape may be omitted. Next, as shown in FIG. 4, the cavity portion 2, the resin dam 8, the wiring layers 4a, 4b, and the external lead-out terminal 6a.

6b etc. is prepared, the semiconductor chip 1 with the leads cut off is fixed to the cavity part 2 face down with the surface facing down via the adhesive 10, and the leads lla and llb are attached to the module board 7. wiring layer 4a,
Outer lead bonding is performed on each of 4b.

Here, wiring layers 4a, 4b and external lead-out terminals 6a, 6b
are connected to each other via through holes 5 penetrating inside the module board 7 as in the past, but the module structure is a module board with wiring layers 4a, 4b and external lead-out terminals 6a, 6b provided on both sides. 7 and an insulating substrate of a resin dam 8 directly bonded thereon, forming a two-layer structure, such as the insulating substrate on which a conventional semiconductor chip is mounted and the cavity portion as shown in FIG. Compared to a three-layer structure consisting of an insulating substrate serving as a resin dam and an insulating substrate serving as a resin dam, the manufacturing process can be simplified and the yield can be improved.

Next, as shown in FIG. 5, the entire semiconductor chip 1 is covered and sealed with a sealing resin 9, and the surface of the sealing resin 9, the back surface of the semiconductor chip 1, and the resin dam 8 are ground or polished. Once removed, the ultra-thin module of the embodiment shown in FIG. 1 is completed.

When thinning by this grinding, the parts to be ground are the back side of the semiconductor chip, the resin dam, and the sealing resin layer, so the grinding reaches the functional parts of the semiconductor chip, the leads, or the wiring layer on the module board. Possible up to depth. Generally, the functional parts of a semiconductor chip are formed at a shallow position of several μm or less from the surface, so it is possible to realize an ultra-thin module with an overall thickness of about 0.2 to 0.3+n. Furthermore, variations in the module insulating substrate thickness, semiconductor chip thickness, and lead height, which have been problems in the past, are all absorbed by grinding, which eliminates the need for strict control as in the past, which has the advantage of improving manufacturing yields. Of course, the thinning process by grinding may be omitted here. In this case, it is possible to make the module even thinner than conventionally used modules due to the effect of reducing the thickness by using two layers of insulating substrates and the effect of reducing the lead height by using the film carrier method. . In addition, although the case where the wiring layer is one layer was explained in the above-mentioned Example, implementation when wiring is multilayered is also easy.

FIG. 6 is a cross-sectional view showing another embodiment of the present invention, in which the wiring is multilayered as described above, and the second layer wiring 4c, 4d is newly added.
This figure shows the case where a is formed. Even in this case, the problems of variations in insulating substrate thickness, semiconductor chip thickness, and lead height due to thinning can be solved, and an ultra-thin module with extremely stable characteristics can be formed.

〔Effect of the invention〕

As explained in detail above, according to the present invention, by face-down bonding semiconductor chips using the film carrier method, the module substrate structure can be simplified and the module thickness can be reduced, while improving the manufacturing yield. Furthermore, by grinding the module, it is possible to obtain an ultra-thin module that is thinner than a thin structure obtained by conventional grinding.

[Brief explanation of the drawing]

Figure 1 is a cross-sectional structural diagram showing one embodiment of the present invention, Figures 2-
FIG. 5 is a plan view and a cross-sectional view showing the process sequence of the method for manufacturing an ultra-thin module according to the present invention, FIG. 6 is a cross-sectional structural view showing another embodiment of the present invention, and FIG. 7 is a conventional thin module of this kind. FIG. 3 is a cross-sectional view showing a typical structure of a module. 1... Semiconductor chip, 2... Cavity part, 3...
・Bonding wires, 4a to 4d...wiring layer, 5・
...Through hole, 6a, 6b ---External lead-out terminal,
7...Module board, 8...Resin dam, 9...
Sealing resin, 10...adhesive, lla, llb...
Lead, 12... Coating resin, 13... Sprocket hole, 14... Device hole, 15
... Electrical sorting pad, 16... Film carrier tape, 17... Bump electrode. 13 Zugo Uke, 2 Tohole/! ＞7'jt37, Measure 3 Kogyu 4 Koshin S circular criticism 67

Claims (2)

[Claims] (1) A module board that has a wiring layer and external lead-out terminals on the top and bottom surfaces and internally connects the wiring layer and external lead-out terminals via through holes, a module board that is laminated on the end of the module board, and a semiconductor. A resin dam forming a cavity of a storage container, a semiconductor chip having a film carrier tape lead connected to an electrode terminal, and face bonding onto a wiring layer of a module board within the cavity; An ultra-thin module characterized by comprising a sealing resin buried in a resin dam. (2) The back surface of the semiconductor chip to be face-bonded is ground or polished together with the resin dam surface and the sealing resin surface close to the element functional part. ultra-thin module.