JPS6365242B2 - - Google Patents
Info
- Publication number
- JPS6365242B2 JPS6365242B2 JP57104474A JP10447482A JPS6365242B2 JP S6365242 B2 JPS6365242 B2 JP S6365242B2 JP 57104474 A JP57104474 A JP 57104474A JP 10447482 A JP10447482 A JP 10447482A JP S6365242 B2 JPS6365242 B2 JP S6365242B2
- Authority
- JP
- Japan
- Prior art keywords
- transistors
- power
- matching device
- circuit
- input power
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010408 film Substances 0.000 claims description 14
- 230000003321 amplification Effects 0.000 claims description 13
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 5
- 239000003990 capacitor Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/38—Impedance-matching networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H11/00—Networks using active elements
- H03H11/02—Multiple-port networks
- H03H11/28—Impedance matching networks
Landscapes
- Microwave Amplifiers (AREA)
- Amplifiers (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57104474A JPS58221512A (ja) | 1982-06-17 | 1982-06-17 | 電力増幅装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57104474A JPS58221512A (ja) | 1982-06-17 | 1982-06-17 | 電力増幅装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58221512A JPS58221512A (ja) | 1983-12-23 |
JPS6365242B2 true JPS6365242B2 (US07223432-20070529-C00017.png) | 1988-12-15 |
Family
ID=14381568
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57104474A Granted JPS58221512A (ja) | 1982-06-17 | 1982-06-17 | 電力増幅装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58221512A (US07223432-20070529-C00017.png) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62292007A (ja) * | 1986-06-11 | 1987-12-18 | Nec Corp | 高周波増幅器 |
US8592966B2 (en) * | 2007-06-22 | 2013-11-26 | Cree, Inc. | RF transistor packages with internal stability network including intra-capacitor resistors and methods of forming RF transistor packages with internal stability networks including intra-capacitor resistors |
JP5239905B2 (ja) * | 2009-01-28 | 2013-07-17 | 富士通株式会社 | 高周波増幅器 |
WO2017033334A1 (ja) * | 2015-08-27 | 2017-03-02 | 三菱電機株式会社 | 整合回路及び高周波増幅器 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5377158A (en) * | 1976-12-20 | 1978-07-08 | Sanyo Electric Co Ltd | Semiconductor variable filter |
JPS5442436B2 (US07223432-20070529-C00017.png) * | 1974-12-27 | 1979-12-14 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5832324Y2 (ja) * | 1977-05-06 | 1983-07-18 | 日本電気株式会社 | 高周波高出力トランジスタ増幅器 |
JPS5717527Y2 (US07223432-20070529-C00017.png) * | 1977-08-30 | 1982-04-13 |
-
1982
- 1982-06-17 JP JP57104474A patent/JPS58221512A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5442436B2 (US07223432-20070529-C00017.png) * | 1974-12-27 | 1979-12-14 | ||
JPS5377158A (en) * | 1976-12-20 | 1978-07-08 | Sanyo Electric Co Ltd | Semiconductor variable filter |
Also Published As
Publication number | Publication date |
---|---|
JPS58221512A (ja) | 1983-12-23 |
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