JPS6364770U - - Google Patents

Info

Publication number
JPS6364770U
JPS6364770U JP15755286U JP15755286U JPS6364770U JP S6364770 U JPS6364770 U JP S6364770U JP 15755286 U JP15755286 U JP 15755286U JP 15755286 U JP15755286 U JP 15755286U JP S6364770 U JPS6364770 U JP S6364770U
Authority
JP
Japan
Prior art keywords
wafer
disk
ion
ion implantation
buffer stage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15755286U
Other languages
English (en)
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP15755286U priority Critical patent/JPS6364770U/ja
Publication of JPS6364770U publication Critical patent/JPS6364770U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Physical Vapour Deposition (AREA)
JP15755286U 1986-10-15 1986-10-15 Pending JPS6364770U (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15755286U JPS6364770U (fr) 1986-10-15 1986-10-15

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15755286U JPS6364770U (fr) 1986-10-15 1986-10-15

Publications (1)

Publication Number Publication Date
JPS6364770U true JPS6364770U (fr) 1988-04-28

Family

ID=31080205

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15755286U Pending JPS6364770U (fr) 1986-10-15 1986-10-15

Country Status (1)

Country Link
JP (1) JPS6364770U (fr)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5763677A (en) * 1980-10-03 1982-04-17 Hitachi Ltd Continuous vacuum treating device
JPS5763676A (en) * 1980-10-03 1982-04-17 Hitachi Ltd Continuous sputtering device
JPS59100522A (ja) * 1982-11-30 1984-06-09 Kokusai Electric Co Ltd 薄膜形成用自動スパツタリング装置
JPS61113767A (ja) * 1984-11-09 1986-05-31 Nissin Electric Co Ltd エンドステ−シヨン
JPS61113766A (ja) * 1984-11-09 1986-05-31 Nissin Electric Co Ltd エンドステ−シヨン
JPS6244571A (ja) * 1985-08-20 1987-02-26 Toshiba Mach Co Ltd イオン注入装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5763677A (en) * 1980-10-03 1982-04-17 Hitachi Ltd Continuous vacuum treating device
JPS5763676A (en) * 1980-10-03 1982-04-17 Hitachi Ltd Continuous sputtering device
JPS59100522A (ja) * 1982-11-30 1984-06-09 Kokusai Electric Co Ltd 薄膜形成用自動スパツタリング装置
JPS61113767A (ja) * 1984-11-09 1986-05-31 Nissin Electric Co Ltd エンドステ−シヨン
JPS61113766A (ja) * 1984-11-09 1986-05-31 Nissin Electric Co Ltd エンドステ−シヨン
JPS6244571A (ja) * 1985-08-20 1987-02-26 Toshiba Mach Co Ltd イオン注入装置

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